Fabrication of organic semiconductor crystalline thin films and crystals from solution by confined crystallization

Highly crystalline thin films of organic semiconductors processed from solution for electronic devices are difficult to achieve due to a slow and preferential three-dimensional growth of the crystals. Here we describe the development of a processing technique to induce a preferential two-dimensional crystalline growth of organic semiconductors by means of minimizing one dimension and confining the solution in two dimensions into a thin layer. The versatility of the process is demonstrated by processing small molecules (TIPS-pentacene and C₆₀) and a polymer (P3HT), all from solvents with a relatively low boiling point, to obtain crystalline thin films. The thin films show an improved in-plane packing of the molecules compared to films processed under similar conditions by spin coating, which is beneficial for the use in organic field-effect transistors.     

Conception of Stretchable Resistive Memory Devices Based on Nanostructure‐Controlled Carbohydrate‐block‐Polyisoprene Block Copolymers

It is discovered that the memory‐type behaviors of novel carbohydrate‐block ‐polyisoprene (MH‐b ‐PI) block copolymers‐based devices, including write‐once‐read‐many‐times, Flash, and dynamic‐random‐access‐memory, can be easily controlled by the self‐assembly nanostructures (vertical cylinder, horizontal cylinder, and order‐packed sphere), in which the MH and PI blocks, respectively, provide the charge‐trapping and stretchable function. With increasing the flexible PI block length, the stretchability of the designed copolymers can be significantly improved up to 100% without forming cracks. Thus, intrinsically stretchable resistive memory devices (polydimethylsiloxane(PDMS)/carbon nanotubes(CNTs)/MH‐b ‐PI thin film/Al) using the MH‐b ‐PI thin film as an active layer is successfully fabricated and that using the MH‐b ‐PI_12.6k under 100% strain exhibits an excellent ON/OFF current ratio of over 10⁶ (reading at ?1 V) with stable V _set around ?2 V. Furthermore, the endurance characteristics can be maintained over 500 cycles upon 40% strain. This work establishes and represents a novel avenue for the design of green carbohydrate‐derived and stretchable memory materials.     

三相全控桥式整流电路实验装置的研制

介绍了开发三相全控桥式整流电路实验装置的背景;叙述了TC787芯片的内部结构、工作原理、特点及芯片的各个管脚的功能;详细介绍了该实验装置的触发电路的设计思路、设计结果和工作原理;介绍了该实验装置的主电路部分的结构和特点。该实验装置性能可靠,符合本科生实验要求。     

Piezoelectric Sensors Operating at Very High Temperatures and in Extreme Environments Made of Flexible Ultrawide-Bandgap Single-Crystalline AlN Thin Films

Extreme environments are often faced in energy, transportation, aerospace, and defense applications and pose a technical challenge in sensing. Piezoelectric sensor based on single-crystalline AlN transducers is developed to address this challenge. The pressure sensor shows high sensitivities of 0.4–0.5 mV per psi up to 900 °C and output voltages from 73.3 to 143.2 mV for input gas pressure range of 50 to 200 psi at 800 °C. The sensitivity and output voltage also exhibit the dependence on temperature due to two origins. A decrease in elastic modulus (Young's modulus) of the diaphragm slightly enhances the sensitivity and the generation of free carriers degrades the voltage output beyond 800 °C, which also matches with theoretical estimation. The performance characteristics of the sensor are also compared with polycrystalline AlN and single-crystalline GaN thin films to investigate the importance of single crystallinity on the piezoelectric effect and bandgap energy-related free carrier generation in piezoelectric devices for high-temperature operation. The operation of the sensor at 900 °C is amongst the highest for pressure sensors and the inherent properties of AlN including chemical and thermal stability and radiation resistance indicate this approach offers a new solution for sensing in extreme environments.     

数字化红外探测器的读出电路晶圆测试系统研究

数字化红外探测器的读出电路晶圆测试是评价晶圆的重要环节。在现有探针台测试设备的基础上,研制了一块电路板装置。它既可驱动晶圆工作,也可将不同形式的数字化输出信号转换为统一的数字图像传输格式,而且测试过程中可对电路板参数进行设置。首先对红外探测器读出晶圆测试系统进行了介绍,然后对研制的测试电路板装置进行了原理分析。最后将此电路板进行硬件实现,并编写了内部测试程序,完成了功能验证。对差分输出和单路输出两种形式的晶圆进行了测试,其结果与晶圆低温下的测试结果一致,数据准确可靠。此外电路装置有100个输入接口,可重复编程,支持24bit及以下输出位宽数字化晶圆的测试,使测试系统具有更高的兼容性和灵活性。     

Wearable Organic Electrochemical Transistor Array for Skin-Surface Electrocardiogram Mapping Above a Human Heart

Electrocardiogram (ECG) mapping can provide vital information in sports training and cardiac disease diagnosis. However, most electronic devices for monitoring ECG signals need to use multiple long wires, which limit their wearability and conformability in practical applications, while wearable ECG mapping based on integrated sensor arrays has been rarely reported. Herein, ultra-flexible organic electrochemical transistor (OECT) arrays used for wearable ECG mapping on the skin surface above a human heart are presented. QRS complexes of ECG signals at different recording distances and directions relative to the heart are obtained. Furthermore, the ECG signals are successfully analyzed by the devices before and after exercise, indicating potential applications in some sports training and fitness scenarios. The OECT arrays that can conveniently monitor spacial ECG signals in the heart region may find niche applications in wearable electronics and healthcare products in the future.     

Solution‐Processed Nickel Oxide Hole Transport Layers in High Efficiency Polymer Photovoltaic Cells

The detailed characterization of solution‐derived nickel (II) oxide (NiO) hole‐transporting layer (HTL) films and their application in high efficiency organic photovoltaic (OPV) cells is reported. The NiO precursor solution is examined in situ to determine the chemical species present. Coordination complexes of monoethanolamine (MEA) with Ni in ethanol thermally decompose to form non‐stoichiometric NiO. Specifically, the [Ni(MEA)₂(OAc)]⁺ ion is found to be the most prevalent species in the precursor solution. The defect‐induced Ni³⁺ ion, which is present in non‐stoichiometric NiO and signifies the p‐type conduction of NiO, as well as the dipolar nickel oxyhydroxide (NiOOH) species are confirmed using X‐ray photoelectron spectroscopy. Bulk heterojunction (BHJ) solar cells with a polymer/fullerene photoactive layer blend composed of poly‐dithienogermole‐thienopyrrolodione (pDTG‐TPD) and [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC₇₁BM) are fabricated using these solution‐processed NiO films. The resulting devices show an average power conversion efficiency (PCE) of 7.8%, which is a 15% improvement over devices utilizing a poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL. The enhancement is due to the optical resonance in the solar cell and the hydrophobicity of NiO, which promotes a more homogeneous donor/acceptor morphology in the active layer at the NiO/BHJ interface. Finally, devices incorporating NiO as a HTL are more stable in air than devices using PEDOT:PSS.     

Flexible Organic Photovoltaic Cells with In Situ Nonthermal Photoreduction of Spin‐Coated Graphene Oxide Electrodes

The first reduction methodology, compatible with flexible, temperature‐sensitive substrates, for the production of reduced spin‐coated graphene oxide (GO) electrodes is reported. It is based on the use of a laser beam for the in situ, non‐thermal, reduction of spin‐coated GO films on flexible substrates over a large area. The photoreduction process is one‐step, facile, and is rapidly carried out at room temperature in air without affecting the integrity of the graphene lattice or the flexibility of the underlying substrate. Conductive graphene films with a sheet resistance of as low as 700 Ω sq^?1 and transmittance of 44% can be obtained, much higher than can be achieved for flexible layers reduced by chemical means. As a proof of concept of our technique, laser‐reduced GO (LrGO) films are utilized as transparent electrodes in flexible, bulk heterojunction, organic photovoltaic (OPV) devices, replacing the traditional ITO. The devices displayed a power‐conversion efficiency of 1.1%, which is the highest reported so far for OPV device incorporating reduced GO as the transparent electrode. The in situ non‐thermal photoreduction of spin‐coated GO films creates a new way to produce flexible functional graphene electrodes for a variety of electronic applications in a process that carries substantial promise for industrial implementation.     

Quasi‐One Dimensional in‐Plane Conductivity in Filamentary Films of PEDOT:PSS

The mechanism and magnitude of the in‐plane conductivity of poly(3,4‐ethy‐lenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films is determined using temperature dependent conductivity measurements for various PEDOT:PSS weight ratios with and without a high boiling solvent (HBS). Without the HBS the in‐plane conductivity of PEDOT:PSS is lower and for all studied weight ratios well described by the relation $ \sigma = \sigma _0 {\rm exp}[- \left({{{{T_0}}\over{T}}} \right)^{0.5}] $ with T₀ a characteristic temperature. The exponent 0.5 indicates quasi‐one dimensional (quasi‐1D) variable range hopping (VRH). The conductivity prefactor σ₀ varies over three orders of magnitudes and follows a power law σ₀∝c^3.5_PEDOT with c_PEDOT the weight fraction of PEDOT in PEDOT:PSS. The field dependent conductivity is consistent with quasi‐1D VRH. Combined, these observations suggest that conductance takes place via a percolating network of quasi‐1D filaments. Using transmission electron microscopy (TEM) filamentary structures are observed in vitrified dispersions and dried films. For PEDOT:PSS films with HBS, the conductivity also exhibits quasi‐1D VRH behavior when the temperature is less than 200 K. The low characteristic temperature T₀ indicates that HBS‐treated films are close to the critical regime between a metal and an insulator. In this case, the conductivity prefactor scales linearly with c_PEDOT, indicating the conduction is no longer limited by a percolation of filaments. The lack of observable changes in TEM upon processing with the HBS suggests that the changes in conductivity are due to a smaller spread in the conductivities of individual filaments, or a higher probability for neighboring filaments to be connected rather than being caused by major morphological modification of the material.