冷41-平14"L"型水平井轨迹优化与控制技术

冷41-平14井受地面条件的限制,靶前位移小,为保证中间套管和完井管柱的顺利下入,剖面设计为“反向造斜-稳斜-降斜-正向造斜-水平段”的“L”型。简要介绍了冷41-平14“L”型水平井的设计概况,详细介绍了该井井眼轨道优化设计原则和设计结果,以及实钻井眼轨迹连续控制技术。该井精确命中A、B靶,两靶处的井斜角、方位角和垂深等达到了设计要求,在A靶实现了软着陆。该井井眼轨道优化设计和井眼轨迹控制技术为类似水平井的井眼轨道设计和轨迹控制提供了有益的借鉴。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

添加CaF2-YF3的AlN陶瓷的热导率

用CaF2和YF3做添加剂，在1750℃制备了热导率高于170W/m.K的的AlN陶瓷，并用XRD和SEM研究了AlN陶瓷在烧结过程中的相组成，微结构以及晶格参数的变化，并讨论了其对热导率的影响，研究发现，当使用CaF2-YF3做添加剂时，微结构差异对AlN陶瓷热导率的影响很小，AlN陶瓷的热导率主要由AlN晶格氧缺陷浓度决定，由于CaF2-YF3能有效降低AlN颗粒表面的氧含量，从而有利于获得高的热导率。     

The thermal ignition of lignocellulosics in infinite slab and cubic geometries

Wood shaving samples were heated in both cubic baskets and in a previously described system realising the conditions of the ‘infinite slab’ in thermal ignition. Results from the two sets of experiment were found to be totally consistent with each other.     

聚乙烯醇膜的阻醇及导电性能(Ⅱ)戊二醛交联聚乙烯醇膜

为提高直接甲醇燃料电池(DMFC)用膜的阻醇性能，采用在渗透蒸发领域广泛使用且具有良好分离效果的聚乙烯醇(PVA)为主要材料，制备了戊二醛(GA)交联PVA膜，考察了此类膜的阻醇及质子导电能力。PVA(GA)膜的阻醇效果较目前在DMFC中广泛使用的Nation膜有显著提高，但其自身不具有质子导电能力，需外加电解质溶液以提高其电导率。     

Microstructure and thermal behavior of Sn-Zn-Ag solders

The microstructure and thermal behavior of the Sn-Zn-Ag solder were investigated for 8.73–9% Zn and 0–3.0% Ag. The scanning electron microscopy (SEM) analysis shows the Ag-Zn compound when the solder contains 0.1% Ag. X-ray diffraction (XRD) analysis results indicate that Ag₅Zn₈ and AgZn₃ become prominent when the Ag content is 0.3% and above. Meanwhile, the Zn-rich phase is refined, and the Zn orientations gradually diminish upon increase in Ag content. The morphology of the Ag-Zn compound varies from nodular to dendrite structure when the Ag content increases. The growth of the Ag-Zn compounds is accompanied by the diminishing of the eutectic structure of the Sn-9Zn solder. Differential scanning calorimetry (DSC) investigation reveals that the solidus temperature of these solders exists at around 198°C. A single, sharp exothermic peak was found for the solders with Ag content less than 0.5%. Liquidus temperatures were identified with the DSC analysis to vary from 206°C to 215°C when the Ag content ranges from 1.0% to 3.0%     

Synthesis and characterization of novel diimide–dinaphthols and resulting poly(urethane–imide)s

Novel diols containing imide groups were prepared via condensation of aromatic dianhydrides with 5‐amino‐1‐naphthol. The diimide–dinaphthols prepared were characterized by conventional methods and used to synthesize new poly(urethane–imide)s (PUIs). All the polymers were characterized and their physical properties, such as solubility, solution viscosity, thermal stability, and thermal behaviour were studied. The polymers obtained showed more thermal stability than typical polyurethanes because of the presence of the imide groups. Copyright © 2003 Society of Chemical Industry