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本文论述了电子系统中电磁干扰的来源、传播途径以及可以采取的防护措施,主要对防护措施中的电磁干扰缝隙屏蔽设计进行了讨论。 相似文献
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Vishal Jain ;Ali Nowzari ;Jesper Wallentin ;Magnus T. Borgstrom ;Maria E. Messing ;Damir Asoli ;Mariusz Graczyk ;Bemd Witzigmann ;Federico Capasso ;Lars Samuelson ;Hakan Pettersson 《Nano Research》2014,(4):544-552
We report on electrical and optical properties of p+-i-n+ photodetectors/solar cells based on square millimeter arrays of InP nanowires (NWs) grown on InP substrates. The study includes a sample series where the p+-segment length was varied between 0 and 250 nm, as well as solar cells with 9.3% efficiency with similar design. The electrical data for all devices display clear rectifying behavior with an ideality factor between 1.8 and 2.5 at 300 K. From spectrally resolved photocurrent measurements, we conclude that the photocurrent generation process depends strongly on the p~-segment length. Without a p+-segment, photogenerated carriers funneled from the substrate into the NWs contribute strongly to the photocurrent. Adding a p+-segment decouples the substrate and shifts the depletion region, and collection of photogenerated carriers, to the NWs, in agreement with theoretical modeling. In optimized solar cells, clear spectral signatures of interband transitions in the zinc blende and wurtzite InP layers of the mixed-phase i-segments are observed. Complementary electroluminescence, transmission electron microscopy (TEM), as well as measurements of the dependence of the photocurrent on angle of incidence and polarization, support our interpretations. 相似文献
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Yize Stephanie Li ;Jun Ge ;Jinhua Cai ;Jie Zhang ;Wei Lu ;Jia Liu ;Liwei Chen 《Nano Research》2014,(11):1623-1630
Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes: The contactless dielectric force microscopy (DFM) technique and the conventional field-effect transistor (FET) method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution. 相似文献
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The electrical conductivity of Cu-base multicomponent alloy before and after deep cryogenic treatment at different situations were measured by conductance instrument, its microstructures were also characterized by optical microscope, and the effect of deep cryogenic treatment on the electrical conductivity ofCu-base multicomponent alloy was studied in this paper. The results show that deep cryogenic treatment can change the electrical conductivity of Cu-base multicomponent alloy, and the electrical conductivity increases with the extension of deep cryogenic treatment time, when deep cryogenic treatment time exceeded 100 min, electrical conductivity increases slightly. However, the higher electrical conductivity can be obtained by aging at 500 ℃ for 30min after deep cryogenic treatment. 相似文献
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