Frenkel pair accumulation induced crystallization of amorphous MgAl2O4

The epitaxial and homogeneous irradiation induced re-crystallization of amorphous MgAl₂O₄ was studied by means of continuous Frenkel pair accumulation in the molecular dynamics framework. Present results point out that the re-crystallization induced by Frenkel pair accumulation appears in both cases to be thermally enhanced but non diffusive. It is governed by a local rearrangement of each point defect in the homogeneous case, while spontaneous Frenkel pair recombination process in the crystalline part or at the interface drives the re-crystallization in the epitaxial case.     

Low energy elastic scattering of positrons by CO: An application of continued fractions and Schwinger variational iterative methods

Iterative Schwinger variational methods and the method of continued fractions, widely used for electron-molecule scattering, are applied for the first time to investigate positron-molecule interactions. Specifically, integral and differential cross sections for elastic positron scattering by CO in the (0.5-20) eV energy range are calculated and reported. In our calculation, a static plus correlation-polarization potential is used to represent the collisional dynamics. Our calculated results are in general agreement with the theoretical and experimental data available in the literature.     

Error estimation in the approximation of the solution of nonlinear fuzzy Fredholm integral equations

Using a fixed point technique, the sequence of successive approximations and a recent quadrature formula for fuzzy-number-valued functions, it is constructed a numerical method for the solution of nonlinear fuzzy Fredholm integral equations. Moreover, the error estimate of the method and a criterion to stop the corresponding algorithm are given.     

Gaststätte mit Gastgarten; Immissionsschutz; subjektiv-öffentliche Nachbarrechte

Bei einer Gastst?tte mit Gastgarten hat – neben der Gewerbebeh?rde – auch die Baubeh?rde mittels Vorschreibung von Auflagen Sorge zu tragen, dass vom Gastgarten ausgehende L?rmbel?stigungen vermieden werden.     

金属间化合物Nd(Fe1-xCox)10V2的结构和磁性研究

通过 X射线衍射和磁测量等手段对金属间化合物 Nd(Fe1 - x Cox) 1 0 V2 的结构和磁性进行了研究。结果表明 ,金属间化合物 Nd(Fe1 - x Cox) 1 0 V2 (x=0 ,0 .0 5 ,0 .1,0 .15 ,0 .2 )的晶体结构均为 Th Mn1 2 型结构 ;随着 Co含量 x的增大 ,晶格常数 a、c和晶胞体积 V将单调减小 ,居里温度 Tc呈单调增大 ,饱和磁化强度 Ms逐渐增加。取向样品Nd Fe1 0 V2 的 X射线衍射和变温穆斯堡尔谱研究结果表明该化合物在 T=12 0 K条件下存在自旋重取向现象。     

首批商用GaN集成功率级器件诞生

国际整流器公司(IR)日前推出行业首个商用集成功率级产品系列,采用了IR革命性的氮化镓(GaN)功率器件技术平台--GaNpowIR.据IR公司环球市场及企业传信副总裁Graham Rober介绍,GaNpowIR是一种革命性的GaN功率器件技术平台,与最先进的硅技术平台相比,能够改善性能指数(FOM)高达10倍,可以显著提高性能并节省能源消耗,该技术平台是IR经过5年的时间,基于其专有硅上氮化镓外延技术研究开发的成果.     

Structural,mechanical and thermal studies of double‐molded isotactic polypropylene nanocomposites with multiwalled carbon nanotubes

Nanocomposites of isotactic polypropylene (iPP) and multiwalled carbon nanotubes (MWCNTs) with various contents of MWCNTs were fabricated by double molding techniques. X‐ray diffraction measurements reveal a development of α‐crystal with lamellar stacks having a long period of 150 Å in the neat iPP that increases to 165 Å in 2 wt % MWCNTs‐loaded composites, indicating that MWCNTs enhance crystallization of iPP as a nucleating factor. Mechanical properties, such as tensile strength, flexural strength, Young's modulus, tangent modulus, and microhardness are found to increase with increasing MWCNTs content. Thermal analyses represent an increase of crystallization and melting temperatures and a decrease of thermal stability of the composites with increasing MWCNTs. Changes in structural, mechanical, and thermal properties of the composites due to the addition of MWCNTs are elaborately discussed. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2010     

Systematics of salt precipitation in complexes of polyethylene oxide and alkali metal iodides

Conductivity measurements in PEO₃₀MI polymer electrolytes with M=Li, Na, K, Rb, or Cs over the temperature range from about 65 to 200 °C show an increasing tendency for salt precipitation with increasing cation size. The salt precipitation in these complexes upon heating is revealed by the decrease of the dc conductivity starting at a critical temperature T_c. Whereas LiI and NaI complexes do not show precipitation effects, T_c monotonically decreases from about 140 to 65 °C when changing the salt component from KI via RbI to CsI. For the PEO-RbI system, precipitation is further investigated by nuclear magnetic resonance (NMR) and tracer diffusion experiments. NMR analysis unambiguously demonstrates the onset of RbI salt precipitation and the increase of the precipitate fraction with increasing temperature. In diffusion experiments on PEO₃₀RbI with the radiotracers and , the precipitation effect is manifested by anomalous features in the penetration profiles, however, without noticeable changes in their depth range. Combining the resulting tracer diffusion coefficients with the dc conductivity data enables us to assess crucial parameters characterizing ionic transport in PEO₃₀RbI.     

Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure

Nontrivial negative capacitance (NC) effect, observed in a-Si:H/c-Si heterostructure devices, is discussed emphasizing the theoretical interpretation of experimental data. To explain NC effect, we have performed dark current voltage (I-V) and admittance measurements (C-V, G-V, C-f and G-f). The calculated values of series resistance (R_s) and barrier height (Φ_Bo) have the values from 100 to 114.7 Ω and 0.94 to 0.83 eV, respectively. Also, below 50% helium dilution rate, diode ideality factor (n) becomes bigger than 2, because tunneling at junction interface plays a major role. The measured room temperature (294 K) dark I-V result has been used during the fitting process for suggested capacitance model (Eq. (18)). The measured NC values exhibit strongly voltage depended behavior. This unexpected behavior is attributed to the presence of inductively coupled space charge region which might possibly be stemmed from the helium diluted a-Si:H material. It is seen that the measured NC values are well fitted with suggested capacitance model (Eq. (18)). Application of suggested correction formula on to experimental C-V data yields satisfactory results. It is shown that the calculated inductance values of the investigated device range from 10 to 42 μH and after correction, NC values are no longer observed in the C_d-V data.     

EPS网络的语音业务解决方案

本文介绍了行业内比较成熟的几种EPS网络语音解决方案,分析了解决方案的特点和具体的实现机制,并结合中国CDMA网络运营商的实际网络情况,给出了相应的建议。