串行接口LED数码管及键盘管理器件ZLG7289A的原理与应用

介绍了LED数码管及键盘管理器ZLG7289A的原理与应用。该芯片具有SPI串行接口，可同时驱动8位共阴式数码管(或64只独立LED)，还可连接多达64键的键盘矩阵，单块芯片即可完成LED显示、键盘接口等全部功能。文章给出了ZLG7289A的特点、引脚功能、指令说明和经典电路．并以单片机AT89C51为例，给出了其接口电路及相应源程序。     

汽车摩擦片厚度测量装置驱动电路的研究

本文通过对摩擦片厚度在线测量装置系统构成的全面分析，对其驱动电路子系统进行了理论探索和技术研究，完成了相应的电路设计、误差分析及器件选择等工作，并进行了具体的实验验证，证明该驱动电路具有良好的性能，可圆满实现摩擦片厚度在线检测和实时分析的工作任务。     

基于LonWorks和DSPs的智能节点

本文提出了一种基于LonWorks和DSPs的智能节点设计方案，并给出了具体的实现方法。该方案简单、可靠，充分利用了LonWorks强大的网络性、可靠性和DSPs强大的数据处理能力，大大提升了节点的智能化程度。     

Kinetic investigation of the carbothermal reduction of an Iranian clay

The kinetics of the carbothermal reduction of clay under argon atmosphere has been investigated by the X-ray diffraction method. The clay-carbon (excess) mixture was formed into 2 cm diameter disks of different thicknesses. Experimental data evidences the significant effect of sample thickness on the reaction rate at 1400 °C. Decreasing thickness promotes mullite dissociation and formation of SiC and alumina powders. Mathematical modeling of the reaction system showed the gas diffusion in the Knudsen regime through the pellet to be the rate controlling step. Diffusivity of CO and reacted core tortuosity factor have been calculated.     

X-ray structure analysis and elastic properties of a fabric reinforced carbon/carbon composite

The effect of heat treatment on microstructure of a plain-weave carbon fabric reinforced carbon-carbon composite with phenolformaldehyde-derived carbon matrix was investigated by X-ray diffraction. The diffraction patterns were analysed by the least-square fitting program Carbonxs. After heat treatment from 1000 to 2800 °C the interplanar distance of (002) planes decreased from 3.488 to 3.420 Å and the lattice parameter in basal plane increased from 2.440 to 2.464 Å, respectively. Simultaneously, the coherent block size in the basal plane directions increased from 18 to 54 Å, which was accompanied by an increase of the fraction of organised carbon atoms from 0.50 to 0.85. The 002 diffraction profile of the composite was much narrower than the sum of peaks of the matrix and fabric alone. This can probably be caused by a better crystallographic ordering (or by a partial graphitisation) of the matrix in the composite. On the other hand, the composite Young’s modulus slightly decreased with the treatment temperature increasing from 2200 to 2800 °C in spite of the established strong improvement of fibre crystallinity and, therefore, fibre modulus. The mechanisms diminishing the modulus of composite (e.g. partial matrix graphitisation at the fibre/matrix interface and decreasing fibre/matrix contact area) probably prevailed over the increasing contribution of the fibre modulus.     

A3钢的工业大气腐蚀

在辽宁省工业城市进行 A3钢大气暴露试验。两年后测出不同地点腐蚀率。依据所记录的各试验点的气象数据和污染数据,讨论了 A3钢的大气腐蚀规律。     

Possible tactics to improve the growth of single-walled carbon nanotubes by chemical vapor deposition

The growth time, growth mode and the method of preparing the supported catalysts play an important role in the growth of single-walled nanotubes (SWNTs). Their effects on the chemical vapor deposition (CVD) growth of SWNTs with MgO-supported catalysts were investigated in this study. It is shown that the growth rate of SWNTs was large during the initial few minutes of growth, however the quality of the tubes was low owing to the formation of many defects. Long term growth may favor the formation of tubes with high quality and high yield, but the introduction of other forms of carbon (impurities) is also unavoidable. There was a balance between the increase in yield and quality and sacrifice of the purity during growth of SWNTs. MgO-supported catalysts prepared by the co-precipitation method were found to be more effective for the synthesis of SWNTs than those prepared by the widely used impregnation method. The size and dispersion state of the catalyst were found to be crucial in enhancing the growth of SWNTs. In addition, growth on the surface of SWNTs over nanosized catalyst films was shown to be more favorable for the synthesis of tube products with higher quality, yield and purity.     

Irradiation Defects in Silicon Crystal

The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.