一种基于电压向量分解的金属探测器的研制

本文首先在能耗式检测电路基础上,分析了限制传统金属探测器精度的因素,提出将电压向量分解为有功分量和无功分量,从而将探测线圈电感和电阻的变化分开以检测金属的方法,最后分析了各种属性金属对电压有功分量和无功分量的影响,所提出的检测原理提高了检测的精度和准确性.     

微波固体有源传感器研究

本文讨论微波固体源作为测量电量、非电量有源传感器的工作原理。指出频带反射高Q腔稳耿氏振荡器适于作为有源传感器,用它取样测量电容介质(ε_τ(?)2～3)薄膜的厚度,量程:200μm,分辨率≤±0.1μm,介质微扰稳频腔产生的振荡器频偏⊿f与其厚度d具有很好的线性关系。频偏的实验值与微扰方法计算值吻合良好。     

空间自适应有源噪声控制技术

应用有源噪声控制理论,在比较反馈控制结构和前控制结构后,提出采用模型参考自适应中的ＭＲＡＳ趋稳定性设计方法,构造一种反馈结构自适应降噪的实施方案。实验表明,消声效果明显。     

基于特征匹配的影像可匹配性研究

对基于特征匹配的影像可匹配性评价方法进行了探讨。从分析影像所包含的信息量入手,提出了通过计算影像的信息熵和累加梯度值进行基于特征匹配的影像可匹配性评价方法。通过基于角点特征和Hausdorff距离的影像匹配实验,发现影像信息熵和累加梯度值与影像可匹配性（即正确匹配概率）之间存在很强的相关性,尽管由于地表景观的不同,表现出的具体规律略有差异,但都表现出匹配正确率随影像信息熵和累加梯度的增大而增大的趋势。因此,可通过对影像信息量的评价来进行基准图的自动选取和飞行路径的规划;在实时匹配导航过程中,可根据获取的每一实时影像所含信息量,来决定是否进行匹配,这样既可以保证匹配的正确性,避免误导,又可节省匹配时间。提出方法对基于灰度相关的影像可匹配性评价具有借鉴意义。     

共孔径红外/激光双模成像导引头系统研究

针对巡航导弹以及各种对地攻击的灵巧炸弹的末制导段．提出了一种共孔径红外／脉冲激光（IR／Ladar）双模成像导引头系统设计方案,可用于对地面固定目标和各种可重定位（Relocatable）目标进行精确地识别和跟踪。该系统采用了被动红外和主动脉冲激光两种成像模式．以被动红外成像来辅助导引头对目标的搜索和捕获．以主动激光雷达成像来完成对目标的精确识别和跟踪．并且被动红外与主动激光成像系统共用一套光学系统,这样既满足目标搜索和捕获阶段的大探测视场的要求,又满足了目标识别跟踪阶段的高分辨率要求。     

网上考试应用系统

介绍了在Ｉｎｔｅｒｎｅｔ环境下利用活动服务器页面（ＡＳＰ）技术,设计一套网上考试系统的实施方案和技术分析,具体介绍了在整个系统的实施中所需要的数据库结构、系统组成以及网页的设计。     

Emulation-based transient thermal modeling of 2D/3D systems-on-chip with active cooling

State-of-the-art devices in the consumer electronics market are relying more and more on Multi-Processor Systems-On-Chip (MPSoCs) as an efficient solution to meet their multiple design constrains, such as low cost, low power consumption, high performance and short time-to-market. In fact, as technology scales down, logic density and power density increase, generating hot spots that seriously affect the MPSoC performance and can physically damage the final system behavior. Moreover, forthcoming three-dimensional (3D) MPSoCs can achieve higher system integration density, but the aforementioned thermal problems are seriously aggravated. Thus, new thermal exploration tools are needed to study the temperature variation effects inside 3D MPSoCs. In this paper, we present a novel approach for fast transient thermal modeling and analysis of 3D MPSoCs with active (liquid) cooling solutions, while capturing the hardware-software interaction. In order to preserve both accuracy and speed, we propose a close-loop framework that combines the use of Field Programmable Gate Arrays (FPGAs) to emulate the hardware components of 2D/3D MPSoC platforms with a highly optimized thermal simulator, which uses an RC-based linear thermal model to analyze the liquid flow. The proposed framework offers speed-ups of more than three orders of magnitude when compared to cycle-accurate 3D MPSoC thermal simulators. Thus, this approach enables MPSoC designers to validate different hardware- and software-based 3D thermal management policies in real-time, and while running real-life applications, including liquid cooling injection control.     

基于非线性流形学习的人脸面部运动估计

由于人脸面部运动变化分布在一个低维非线性流形中,基于线性假设的主动外观模型采用主成分分析算法描述人脸形状的变化必然带来额外的估计误差.为降低或消除这一误差,该文提出一种改进的局部线性嵌入算法构建人脸形状-纹理空间,并将其应用于主动外观模型中.实验结果表明,不仅对于面部形变不大的人脸形状,局部线性嵌入-主动外观模型拥有更...     

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

Active cycling of power devices operated in harsh conditions causes high power dissipation, resulting in critical electrothermal and thermo-mechanical effects that may lead to catastrophic failures. This paper analyzes the ageing-induced degradation of the chip metallization of a power MOSFET and its impact on the device robustness during short-circuit and unclamped inductive switching tests. A 3-D electrothermal simulator relying on a full circuit representation of the whole device is used to predict the influence of various ageing levels. It is found that ageing can jeopardize the robustness of the transistor when subject to short-circuit conditions due to the exacerbated de-biasing effect on the gate-source voltage distribution; conversely, this mechanism does not arise under unclamped inductive switching conditions. This allows explaining the difference in time-to-failure experimentally observed for the transistors subject to these tests and dissipating the same energy.