Performance of in-call buffer/window allocation schemes for short intermittent file transfers over broadband packet networks

While static open loop rate controls may be adequate for handling continuous bit rate (CBR) traffic, relatively smooth data traffic, and relatively low speed bursty data traffic over broadband integrated networks, high speed bursty data sources need more dynamic controls. Burst level resource allocation is one such dynamic control. Potential benefits and other issues for burst level resource parameter negotiations for bursty data traffic over high speed wide area packet networks have been discussed earlier.^1–6 A detailed analysis of an adaptive buffer/window negotiation scheme for long file transfers using these concepts is presented in Reference 1. In this paper we discuss two burst level buffer/window negotiation schemes for short intermittent file transfers, focusing on the specific needs of such traffic streams. We develop closed network of queues models to reflect the behaviour of the proposed schemes. These models, while being simple, capture essential details of the control schemes. Under fairly general assumptions, the resulting network of queues is of product form and can be analysed using the mean value analysis. We use such an analysis to compare the proposed schemes and to determine appropriate sizes of trunk buffers to achieve the desired balance between bandwidth utilization and file transfer delay. The effects of other parameters on the performance of these schemes as well as on the buffer sizing rules are also discussed. Burst level (in-call) parameter negotiation may be carried out by the end system with the network elements or by an interface system (access controller) with the broadband network elements. We discuss implications of this location as well as the needed protocol features. Finally, the service discrimination capabilities desired at the trunk controllers in switching nodes are briefly discussed.     

局域网服务器缓冲区容量的Petri网设计方法

本文在分析局域网服务器信息缓冲区、数据包接受和发送缓冲区的相互关系基础上提出一种新的局域网服务器缓冲区设计方法─—广义随机Ｐｅｔｒｉ网方法，并给出了局域网服务器信息缓冲区的广义随机Ｐｅｔｒｉ网模型。该设计方法理论完备、严谨实用，且不再局限于追求某一边界值（上限或下限），并且避免了排队理论处理多级服务的繁琐公式。最后本文用一例题说明了这种方法的应用。     

S3C6410（ARM11）嵌入式控制系统液晶显示驱动问题研究

嵌入式控制系统的设计,首先要进行人机界面设计,这就涉及到在LCD上显示汉字、英文字符和各种曲线的问题,在Linux嵌入式控制系统设计中也是如此。我们知道,无论是高级语言支持的各种显示器,还是嵌入式系统常用的LCD,它们的分辨率都是以像素为单位,一个像素就是LCD屏上的一个可以显示的最小单位,也就是常说的＂点＂。因此,要在LCD屏上显示一个汉字或图形就必须将汉字或图形用＂点＂来表示。在嵌入式控制系统人机界面设计中,采用＂打点＂方法来显示汉字、英文字符和各种曲线,是直接对显示内存进行操作,从而使显示速度最快、技术最先进。文章介绍作者在进行＂嵌入式肿瘤光子热疗系统＂项目的人机界面设计时,不用QT,绕过繁琐的FrameBuffer结构,直接采用＂打点＂的方法显示汉字、英文字符和各种曲线,＂打点＂方法可以适用各种平台的嵌入式控制系统人机界面设计。     

Burstiness and resource management in ATM networks

Networks based upon the asynchronous transfer mode (ATM) provide for high flexibility to cope with a wide range of applications, some of them producing highly sporadic traffic. Therefore, the problem of burstiness has become in the last few years a key issue for such networks. A basic question is how to dimension network buffers in the presence of bursty traffic? In this paper we investigate the concept of burstiness and its impact on resource management. In burstiness characterization encountered in the literature, special attention has been given to the squared coefficient of variation of inter-arrival time Cv² in a cell arrival process. In order to observe the impact of bursty traffic on a queue, we develop in the present paper a ‘bursty’ traffic model, namely the two-stage hyper-Bernoulli cell arrival process, HBP₂, for short. We numerically solve the HBP₂/D/1/K queue. We especially derive the rejection probability P_loss. Numerical results are then thoroughly studied and we discuss the relevance for burstiness characterization of Cv² and peak to mean rate ratio B. We draw attention to the concept of local overload, i.e. when the arrival rate is greater than the server rate. This seems to be the most relevant phenomenon in the impact of a bursty traffic on a queue. These results are finally applied to the problem of resource management in ATM networks.     

Separation of whey proteins by anion-exchange membranes

Three strong anion-exchange membranes (CIM QA, Q100 and HiTrap Q) were investigated for the separation of the major proteins, which were contained in whey, such as α-Lactalbumin, BSA and β-Lactoglobulin. Experiments were performed to determine the optimum mobile phase composition for separating the whey proteins using the standard chemicals of the proteins. The mobile phase was buffer A (20 mM piperazine-HCl pH 6.4) and buffer B (buffer A+1 M NaCl) and the linear gradient elution changes of salt concentration were applied. The standard chemicals of the proteins were used to investigate the optimal mobile phase compositions with the three anion-exchange membranes. From the experimental results, it was found that HiTrap Q was the most effective in separating whey proteins.     

Enhancing the performance and stability of solid oxide fuel cells by adopting samarium-doped ceria buffer layer

In this work, the Sm_0.2Ce_0.8O_1.9 (SDC) buffer layer was used to replace the Gd_0.1Ce_0.9O_1.95 (GDC) buffer layer to improve the long-term stability and performance of the solid oxide fuel cells (SOFCs) in the intermediate temperature (550–750 °C). The buffer layer was prepared by screen printing method. The micromorphology of the SDC buffer layer and the cell structures was observed by scanning electron microscopy (SEM). The electrochemical impedance spectroscopy (EIS) results showed that the polarization resistance (R_P) of the cell with SDC buffer layer was smaller than that of the cell with GDC buffer layer, reducing the R_P values by 43.52% and 43.33%, respectively (SDC-cell: 0.12 Ω cm² at 650 °C and 0.27 Ω cm² at 600 °C). The maximum power density of the cell with SDC buffer layer is 560 mW cm⁻² at 650 °C, which was 25% higher than that with GDC buffer layer. The long-term durability of the cell with SDC buffer layer was better than that of the cell with GDC buffer layer. These provide an excellent prospect for utilizing SDC buffer layer.     

Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Barium titanate (BaTiO₃) thin films are prepared by conventional 2-methoxy ethanol-based chemical solution deposition. We report highly c-axis-oriented BaTiO₃ thin films grown on silicon substrates, coated with a lanthanum oxynitrate buffer layer of 8.9 nm. The influence of the intermediate buffer layer on the crystallization of BaTiO₃ film is investigated. The annealing temperature and buffer layer sintering conditions are optimized to obtain good crystal growth. X-ray diffraction measurements show the growth of highly oriented BaTiO₃ thin films having a single perovskite phase with tetragonal geometry. The scanning electron microscopy and atomic force microscopy studies indicate the presence of smooth, crack-free, uniform layers, with densely packed crystal grains on the silicon surface. A BaTiO₃ film of 150-nm thickness, deposited on a buffer layer of 7.2 nm, shows a dielectric constant of 270, remnant polarization (2P_r) of 5 μC/cm², and coercive field (E_c) of 60 kV/cm.     

Effects of buffer layer materials and process conditions on growth mechanisms of forming networks of SWNTs by microwave plasma chemical vapor deposition

This study investigates the growth mechanism of IC compatible processes and to the feasibility of synthesizing networks of single-walled carbon nanotubes (SWNTs) at lower temperatures (610 °C) on Si wafer using microwave plasma chemical vapor deposition (MPCVD) with CH₄ and H₂ as source gases. The effects of the buffer layer materials (ZnS–SiO₂, Al₂O₃, AlON, and AlN ) and process conditions on growth of carbon nanostructures with Co as catalyst were also examined, where the buffer layers and Co catalyst were deposited in sequence by physical vapor deposition (PVD), followed by H-plasma pretreatment before deposition of carbon nanostructures. Additionally, the morphologies and bonding structures of carbon nanostructures were characterized by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), and Raman Spectroscopy. Analytical results demonstrate that networks of SWNTs are more favorable to be synthesized by selecting proper buffer layer material (e.g., AlON), and under higher temperatures, thinner catalyst thickness (e.g., 5 nm) and lower CH₄ / H₂ ratio (e.g., 5 / 100 sccm/sccm). The networks of SWNTs can be fabricated at temperatures as low as 610 °C by manipulating these parameters. In conclusion, the growth mechanism determines the conditions for the formation of nano-sized extrusions on catalyst particles surface.     

Efficiency improvement of CIGS solar cells using RF sputtered TCO/Ag/TCO thin-film as prospective buffer layer

In this paper, TCO (Transparent Conductive Oxide) incorporating ultrathin Ag intermediate film is proposed as a new buffer layer to enhance the efficiency of CIGS thin-film solar cells (TFSCs). In this regard, versatile multilayer thin-films based on ZnO/Ag/ZnO and ITO/Ag/ITO structures were deposited on glass using RF magnetron sputtering technique to determine the optoelectronic parameters of the multilayer structures. The elaborated samples were then characterized using SEM, EDS, XRD, and UV–Visible absorption spectroscopy techniques to investigate the structure morphological, optical, and electronic properties. The deposited multilayer thin-films showed amorphous-like structure and exhibited a broadband absorbance over the visible and even NIR spectrum ranges, indicating its potential application as alternative buffer layers for thin-film solar cells. In this context, TCO/Ag/TCO/CIGS solar cells have been numerically investigated using the deposited multilayer optoelectronic properties. It was revealed that the estimated efficiency of the ZnO/Ag/ZnO/CIGS-based solar cell could reach 18.5% with an open circuit voltage of 0.7 V and a short-circuit current density of 34.8 mA/cm². The performances exhibited by the investigated solar cell demonstrated that ZnO/Ag/ZnO multilayer can be used as an alternative to the conventional CdS buffer layer for developing high-performance non-toxic CIGS solar cells.