共享缓存分组交换系统中的最佳阈值Pushout策略

提出了一种用于共享缓存分组交换设备的最佳闽值Pushout的缓存管理策略（OTP）。在这个策略巾，缓存区采用共享的方式，而每个输出端口分组调度采用Pushout策略。OTP策略的主要思想是将输出端口按照其队列长度分为括跃和非活跃端口，根据队列长度与端口的话跃程度决定分组的接纳或丢弃。仿真结果表明，OTP策略在多个输出队列的情况下具有较好的公平性和鲁棒性，同时在丢包率方面，OTP策略的分组丢失率接近于SP（Selection Pushout）策略。     

一种新型的低电压高速CMOS锁相环电荷泵

采用0．18μm标准CMOS工艺，设计并流片验证了一种新型的低电压高速CMOS锁相环电荷泵。该电荷泵电路适合低电压工作，电源电压仅为1V。该电路的输出电压也达到了相对较宽的范围：100mV到900mV，同时又较好地抑制了输出电流的尖脉冲干扰。最后HSPICE模拟结果表明：在较高的工作频率（500MHz）下，电荷泵电路功耗也相对较低（60μW）。     

基于缓冲区溢出的木马研究

本文主要分为两个部分：第一部分主要是介绍了目前存在于计算机系统攻击中最普遍的缓冲区漏洞问题,集中阐述了其溢出原理、利用缓冲区溢出进行攻击的原理；第二部分详细介招了利用缓冲区溢出原理进行木马植入攻击的原理以及实现方式。     

Linux 缓冲区溢出攻击检测与防范技术

缓冲区溢出攻击已成为黑客进行系统攻击的主要手段之一，简要分析了该攻击的基本原理，提出了使用安全的C函数库和控制内核的系统调用两种检测防范策略，并通过与其它技术的比较评价了其特点。     

缓冲区溢出攻击的分析和一种防卫算法RAP

基于缓冲区溢出的攻击是一种常见的安全攻击手段，文中从编程的角度分析了缓冲区溢出攻击（BOFA），攻击成功的条件及攻击分类，并分析了抵御BOFA的方法，最后给出了一个能有效抵御BOFA的软件RAP的工作原理和算法。     

基于变比特率视频流的一种确定允许控制策略

在研制视频服务器的过程中，必须综合考虑内存空间、磁盘带宽和网络带宽这些资源并充分利用。基于CBR(变比特率)视频流的机制没有有效利用系统资源，因为多媒体数据通常压缩编码成VBR(变比特率)的形式存储与传输。文章实现了基于VBR数据模型的一种确定的允许控制策略，并与基于CBR数据模型的允许控制策略作了对比。在该机制中，服务周期长度随时间动态改变，在综合考虑系统磁盘带宽和内存空间资源的前提下，可以有效提高系统服务性能。     

缓冲区溢出攻击与防范

随着计算机和网络技术的发展,计算机和网络的安全正受到日益严重的威胁。各种攻击手段不断出现,造成计算机和网络不能正常运行、数据受到破坏和窃取等。缓冲区溢出攻击是对计算机和网络进行攻击的常见方法之一。它是利用向一个有限的缓冲区中拷贝过长的字符串,导致缓冲区相邻存储单元被覆盖,从而使程序运行失败或跳转到攻击者设计的攻击代码处执行攻击代码。这样攻击者就有机会获取计算机或网络服务器的控制权。介绍了代码植入、参数传递、利用活动记录和函数指针及长跳转缓冲区等攻击方法。同时,介绍了缓冲区溢出攻击的防范措施。     

Control point policy optimization using genetic algorithms

This paper describes the application of an integrated Genetic Algorithm (GA)/Discrete Event Simulation model for selecting optimum values for Critical Point Policy (CPP) hedging time and buffer size parameters. The CPP is shown to perform well, when compared with the Critical Ratio priority rule, in terms of improving service levels, particularly when subject to conditions where buffer sizes and Takt times are required to be small. The technique developed involves buffer sizes being chosen by a GA according to a constraint on the total storage space available within the system. A method is described for reducing the number of variables that the GA needs to deal with, hence, improving the efficiency of the GA optimization process. The development and application work reported also provides further understanding into how and when the CPP should be applied.     

Application of ultrasonic Doppler velocimetry to molten glass by using broadband phase difference method

An ultrasonic velocity profile (UVP) measurement in high temperature molten glass was presented using buffer rod technique. A ceramic buffer rod was used to transmit ultrasound into molten glass. The rod had a taper shape and porous cladding to suppress trailing echo, which is the spurious echo in the buffer rod measurement. The broadband signal processing method was presented to improve noise tolerance in velocity estimation. This method is based on the phase difference method, which is originally proposed as a narrowband method. Measurable distance of the UVP measurement was investigated combining the buffer rod and the broadband signal processing method. Experiment was conducted at the temperature from 1000 °C to 1200 °C. As a preliminary test, motion tracking in molten glass was successfully demonstrated.     

Physical investigations on (In2S3)x(In2O3)y and In2S3−xSex thin films processed through In2S3 annealing in air and selenide atmosphere

In₂S_3−xSe_x and (In₂S₃)_x(In₂O₃)_y thin films have been prepared on glass substrates using appropriate heat treatments of In evaporated thin films. X-ray analysis shows that In thin films which were annealed under sulfur atmosphere at 350 °C were mainly formed by In₂S₃. A heat treatment of this binary in air at 400 °C during one hour leads to (In₂S₃)_x(In₂O₃)_y ternary material which has a tetragonal structure with a preferred orientation of the crystallites along the (109) direction. Similarly, a heat treatment of In₂S₃ in selenium atmosphere at 350 °C during six hours leads to a new In₂S_3−xSe_x ternary material having tetragonal body centered structure with a preferred orientation of the crystallites along the (109) direction. Optical band gap, refractive index and extinction coefficient values of In₂S_3−xSe_x and (In₂S₃)_x(In₂O₃)_y thin films have been reached. Moreover, correlations between optical conductivity, XRD, AFM and Urbach energy of such ternary thin films have been discussed. Finally, the recorded formation disparity between the quaternary (In₂S₃)_x(In₂O₃)_y and ternary In₂S_3−xSe_x compounds has been discussed in terms of the Simha–Somcynsky and Lattice Compatibility theories.