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21.
ZnGa2O4纳米晶的制备和结构表征   总被引:2,自引:0,他引:2  
采用喷射共沉淀法制备了ZnGa2O4 纳米晶,XRD、SEM和TEM结构分析结果表明,喷射共沉淀法制备的ZnGa2O4的纳米晶颗粒细小均匀,形状完整,与化学共沉淀法相比,粒子尺寸明显减小,小于10nm,同时ZnO杂相峰消失,分析了喷射共沉淀法的机理,并对实验结果进行了解释。  相似文献   
22.
本论文提出一种基于TMS320C6701 DSP实现HDTV信源解码器的方案。用C6701实现系统控制、解复用、AC-3音频解码,用STi7000视频解码。与现有的HDTV信源解码方案相比,本方案将核心芯片由三片(系统控制+解复用、视频解码和音频解码)减少到两片,有利于系统集成,代表了HDTV信源解码器的发展方向之一。  相似文献   
23.
IPv6过渡机制讨论   总被引:3,自引:0,他引:3  
本文在简要地介绍Ngtrans工作组提出的大多数过渡机制的基础上,尝试对它们进行区分、分类,并对每一种过渡机制的优缺点进行分析。另外.还对这些机制的布置以及一部分支持这些机制的产品平台进行讨论。  相似文献   
24.
LiFePO4 is a potential candidate for the cathode material of the lithium secondary batteries. A co-precipitation method was adopted to prepare LiFePO4 because it is simple and cheap. Nitrogen gas was needed to prevent oxidation of Fe2+ in the aqueous solution. The co-precipitated precursor shows the high reactivity with the reductive gas, and the single phase of LiFePO4 is successfully synthesized with the aid of carbon under less reductive conditions. LiFePO4 fine powder prepared by co-precipitation method shows high rate capability, impressive specific capacity and cycle property.  相似文献   
25.
The effects of gallia additions on the sintering behavior of gadolinia-doped ceria were systematically investigated from the following aspects: the variation in sintered density, the variation in grain size, and the existing forms of Ga2O3 in CeO2.Sintered density increased with increasing Ga2O3 content up to 5 mol.% and then it decreased with further addition of Ga2O3. Grain size also increased with increasing Ga2O3 content up to 5 mol.% and then decreased with further addition of Ga2O3. Decrease in grain size was caused by a pinning effect of Ga2O3 precipitation at grain boundaries. Lattice constant decreased with increasing Ga2O3 content up to 5 mol.%. This decrease will be due to the substitution of smaller Ga3+ ions for Ce4+ ions in the CeO2 structure. According to the results obtained from scanning electron microscope (SEM) and X-ray diffraction (XRD) analyses, the solubility limit of Ga2O3 in Ce0.8Gd0.2O1.9 ceramics can be estimated to be nearly 5 mol.%. The addition of Ga2O3 up to the solubility limit was found to promote the sintering properties of Gd2O3-doped CeO2.  相似文献   
26.
The thick film of Zn-Sb-O was prepared by coating the paste of nanoparticles mixture (Sb2O3:ZnO=1:3) on the alumina substrate, followed by sintering at 500-900 °C for 2 h in air. The electrical resistance and gas-sensing properties to benzene, alcohol and acetone of Zn-Sb-O films were found to be dependent on the change of phase structure caused by sintering temperature.  相似文献   
27.
田兴亮 《山西建筑》2003,29(4):231-232
介绍了河曲公路所处的自然环境 ,阐述了人工铲草的利与弊 ,进而提出了边坡培植柠条的效益分析 ,并对培植柠条的苗期管理及与养护生产的关系进行了介绍  相似文献   
28.
Natalia Andronova 《Polymer》2005,46(18):6746-6755
The synthesis and characterization of degradable polymeric networks for biomedical applications was performed. Cross-linked films of poly(ε-caprolactone) (PCL) and poly(1,5-dioxepan-2-one) (PDXO) having various mole fractions of monomers and different cross-link densities were successfully prepared using 2,2′-bis-(ε-caprolactone-4-yl) propane (BCP) as cross-linking agent. Reaction parameters were carefully examined to optimise the film-forming conditions. Networks obtained were elastomeric materials, easy to cast and remove from the mould. Effect of CL content and cross-link density on the final properties of the polymer network was evaluated. High CL content or degree of cross-linking led to increase in Young's modulus and decrease in elongation at break. An increase in crystalline domains in films having a higher CL content was observed by optical microscopy. A greater thermal stability was observed in films having a high CL content. The hydrophilicity of the materials could be tailored by changing the CL content. The surface of the films became rougher with higher CL content.  相似文献   
29.
BBN (BaBi2Nb2O9) is very interesting and promising lead free material with relaxor properties in capacitors, sensors and actuators.  相似文献   
30.
Advanced sol–gel methods using a secondary solvent addition into (Pb, La)(Zr, Ti)O3 (PLZT) sol–gel solution and a methanol pre-treatment of sapphire substrates are demonstrated. For the secondary solvent addition, the additive affected the crystallinity and electro-optic (EO) property of PLZT films and only methanol addition can improve them. In addition, the methanol pre-treatment is also appeared to be effective to improve film characteristics.

Through these optimizations, epitaxially grown PLZT thin films on r-cut sapphire are obtained and a high Pockels coefficient which is comparable to those of bulk PLZTs is achieved. It is believed that these PLZT thin films are applicable for integrated EO devices and open the door for the future data communication systems.  相似文献   

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