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61.
碳/碳复合材料CVI工艺中热解碳形成机理的研究 总被引:1,自引:1,他引:0
对碳碳复合材料CVI或(CVD)工艺中热碳组织的类型,沉积机理等研究情况进行了简要的综述,并对其进一步研究提出了相应观点。 相似文献
62.
63.
数据包络分析模型及其应用研究 总被引:1,自引:1,他引:0
郑明贵 《南方冶金学院学报》2004,25(4):62-66
通过对传统的C^2R模型进行研究并加以改进,建立了C2RHZ模型,利用有色金属矿采选业1993-2001年科技创新的相关数据进行了计算分析。说明了C^2RHZ模型的应用价值. 相似文献
64.
Thin layers of ceria were deposited on the surface of mica platelets in solution. The reaction of such particles with hydrogen sulfide yields a red colored special effect pigment. The ceria layer reacts with H2S to produce a variety of sulfide and oxysulfide phases. The reaction path discovered in situ by time and temperature resolved X-ray diffraction is CeO2→CeS2→C-Ce2S3→Ce10S14O. The reaction itself is extremely variable depending on gas flow, heating rates and decomposition atmospheres. Effects on the thin film are recorded by scanning electron microscopy (SEM) and revealed a destruction of the layer once red Ce10S14O was formed. The product layer then reveals the typical nonwetting behaviour of a liquid on a surface. 相似文献
65.
LiFePO4 is a potential candidate for the cathode material of the lithium secondary batteries. A co-precipitation method was adopted to prepare LiFePO4 because it is simple and cheap. Nitrogen gas was needed to prevent oxidation of Fe2+ in the aqueous solution. The co-precipitated precursor shows the high reactivity with the reductive gas, and the single phase of LiFePO4 is successfully synthesized with the aid of carbon under less reductive conditions. LiFePO4 fine powder prepared by co-precipitation method shows high rate capability, impressive specific capacity and cycle property. 相似文献
66.
The effects of gallia additions on the sintering behavior of gadolinia-doped ceria were systematically investigated from the following aspects: the variation in sintered density, the variation in grain size, and the existing forms of Ga2O3 in CeO2.Sintered density increased with increasing Ga2O3 content up to 5 mol.% and then it decreased with further addition of Ga2O3. Grain size also increased with increasing Ga2O3 content up to 5 mol.% and then decreased with further addition of Ga2O3. Decrease in grain size was caused by a pinning effect of Ga2O3 precipitation at grain boundaries. Lattice constant decreased with increasing Ga2O3 content up to 5 mol.%. This decrease will be due to the substitution of smaller Ga3+ ions for Ce4+ ions in the CeO2 structure. According to the results obtained from scanning electron microscope (SEM) and X-ray diffraction (XRD) analyses, the solubility limit of Ga2O3 in Ce0.8Gd0.2O1.9 ceramics can be estimated to be nearly 5 mol.%. The addition of Ga2O3 up to the solubility limit was found to promote the sintering properties of Gd2O3-doped CeO2. 相似文献
67.
The thick film of Zn-Sb-O was prepared by coating the paste of nanoparticles mixture (Sb2O3:ZnO=1:3) on the alumina substrate, followed by sintering at 500-900 °C for 2 h in air. The electrical resistance and gas-sensing properties to benzene, alcohol and acetone of Zn-Sb-O films were found to be dependent on the change of phase structure caused by sintering temperature. 相似文献
68.
介绍了河曲公路所处的自然环境 ,阐述了人工铲草的利与弊 ,进而提出了边坡培植柠条的效益分析 ,并对培植柠条的苗期管理及与养护生产的关系进行了介绍 相似文献
69.
BBN (BaBi2Nb2O9) is very interesting and promising lead free material with relaxor properties in capacitors, sensors and actuators. 相似文献
70.
K. Uchiyama T. Shiosaki T. Kosaka A. Kasamatsu M. Echizen 《Ceramics International》2008,34(4):979-983
Advanced sol–gel methods using a secondary solvent addition into (Pb, La)(Zr, Ti)O3 (PLZT) sol–gel solution and a methanol pre-treatment of sapphire substrates are demonstrated. For the secondary solvent addition, the additive affected the crystallinity and electro-optic (EO) property of PLZT films and only methanol addition can improve them. In addition, the methanol pre-treatment is also appeared to be effective to improve film characteristics.
Through these optimizations, epitaxially grown PLZT thin films on r-cut sapphire are obtained and a high Pockels coefficient which is comparable to those of bulk PLZTs is achieved. It is believed that these PLZT thin films are applicable for integrated EO devices and open the door for the future data communication systems. 相似文献