Strontium doping effects on the characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide thin-film transistors

In this paper, we investigated the strontium doping effects on the electrical and physical characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). With an optimized doping concentration of strontium (5 at%) in aluminum oxide (Al₂O₃), an oxide gate dielectric layer having a dielectric constant of ~7 and low leakage current characteristics (~4 × 10⁻⁷ A/cm² at 3 MV/cm) could be achieved by a solution process, which are comparably better than those of pristine Al₂O₃ film. The enhanced dielectric properties from strontium doping can be attributed to the change in the physical properties of Al₂O₃ film incorporated with strontium, providing charge relaxation of defect states in Al₂O₃ film. Also, since the strontium is highly reactive with oxygen, the strontium substitution through a doping leads to more strongly bound structure in an Al₂O₃ film without considerable lattice distortion. Using the strontium-doped aluminum oxide film as a gate dielectric layer, having a thickness less than 10 nm, solution-processed IGZO TFTs operating at ≤ 1 V were demonstrated showing a field-effect mobility of 1.74 ± 1.10 cm²/V s and an on-current level of ~10⁻⁵ A.     

Collaborative test programme results for 0°BD tensile properties on carbon–epoxy AS4/8552 and carbon– cyanate M55J/954-3 composite materials and some considerations on EN 2561 test standard

Abstract

A collaborative test programme has been undertaken on modified epoxy matrix 8552 reinforced with AS4 carbon fibres, and cyanate 954-3 reinforced with M55J high modulus carbon fibre, both in the form of unidirectional prepreg. To date more than 300 specimens have been tested according to the EN 2561 standard (tensile test parallel to the fibre direction). Different testing conditions such as tabbed and untabbed specimens, dry and wet conditioning, 23 and 70°C test temperature, 7° bevelled or squared off 90° tabs, and the influence of different gripping systems (mechanical and hydraulic) were studied. Average strength values and Young's modulus values are presented with their standard deviations for these materials at every tested condition. In tensile strength measurements, the importance of using tabs for the gripping system and tested material is demonstrated.     

低温阀门闸板应力场的数值计算及分析

在对低温闸板结构进行简化后,采用有限元法开发了应力分析软件,对应力、位移场进行了数值模拟,并绘制了应力等值线图、位移图和应力变化曲线图,探讨了应力与变形的规律,为进一步完善低温闸板的设计提供了理论依据。     

对AG50左箱体压铸模浇注系统的改造及工艺分析

叙述了对AG5 0左箱体引进压铸模浇注系统的改造情况并进行了工艺分析 ,探讨了浇注系统中浇道、内浇口的设计数量及金属液体通过内浇口时 ,控制导入流向 ,控制汇流点 ,设置合理的排溢系统 ,以达到提高成品率的目的     

改进的仲裁器PUF设计与分析

介绍Daihyun等设计的仲裁器物理不可克隆函数(PUF)方案,指出其不足之处。在此基础上提出一种改进方案,设计并分析基于 D触发器的仲裁器PUF,在FPGA平台上实现并测试该方案的性能。实验结果表明,改进方案在输出的0, 1平衡性方面优于Daihyun的PUF方案。     

Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol-gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 °C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol-gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems.     

Improvement of Al2O3/Ge interfacial properties by O2-annealing

The electrical properties of an Al₂O₃/Ge gate stack structure were improved by O₂-annealing. The interface state density can be decreased by O₂-annealing without the formation of a GeO₂ interfacial layer. X-ray photoelectron spectroscopy measurements revealed that Ge diffusion into the Al₂O₃ layer occurs and Ge is uniformly distributed in the oxide layer after O₂-annealing. Crystallization of the Al₂O₃ film was observed after O₂-annealing at 550 °C and was identified as an Al-Ge-O compound using cross sectional transmission electron microscopy and transmission electron diffraction measurement.     

基于FPGA的TOE网卡设计与实现

为进一步减轻CPU的负担,有效增加系统性能,描述一种基于FPGA的TCP减负引擎系统的设计与实现。该TOE网卡将部分TCP协议软件处理下移到FPGA中实现,以硬件的方法实现报文分类和TCP流还原等流量处理功能。实验数据表明,使用TOE网卡可以大幅降低主机的CPU占用率。