Temperature- and frequency-dependent hysteresis scaling behaviour and phase transitions in a [001]c 0.73Pb(Mg1/3Nb2/3)O3-0.27PbTiO3 single crystal

The dielectric properties and bipolar polarization-electric field (P-E) and strain-electric field (S-E) dynamic hysteresis of a relaxor [001]_c 0.73Pb(Mg_1/3Nb_2/3)O₃-0.27PbTiO₃ (PMN-0.27PT) single crystal were investigated to reveal more details of the temperature-induced phase transitions. Different linear scaling relations for ferroelectric hysteresis area <A>, coercive field E_c, saturation polarization P_s and remnant polarization P_r versus temperature τ were measured in different temperature regions. For each measurement frequency f, all hysteresis parameters were found to decrease linearly with temperature in the temperature range of the single rhombohedral (R) phase or tetragonal (T) phase, and the rate of decrease in the T phase was observed to be much larger than the corresponding rate in the R phase. In the temperature range near the R-T phase transition, the exponent α in the power law <A>∝f ^α for the R phase was found to be smaller than that for the T phase, and the magnitude of α depended strongly on temperature when the crystal was in the R-T coexisting phase state. Our experimental and theoretical results indicate that the difference in the activation energy and dipole moment in the R and T phases may lead to the observed discrepancy for the P-E and S-E hysteresis behaviour in different temperature regions.     

Experimental research on dynamic response of PZT-5H under impact load

In order to improve the stability of PZT-based sensors, the mechanical, dielectric, ferroelectric and piezoelectric properties of PZT-5H under impact load were studied experimentally by using the separated Hopkinson pressure bar (SHPB) with an electrical output measurement device. At the same time, the experimental study on the material properties of PZT-5H before and after the impact was carried out. The effect of impact cracks on the output voltage of PZT-5H was also analyzed. The results show that the dynamic piezoelectric constants of PZT-5H under low stress impact (10–50 MPa) are different from those under quasi-static state, and the empirical relationship between them and the peak stress is obtained through experiments. The dielectric properties of PZT-5H did not change under low stress impact, but micro-cracks occurred in the material and dielectric loss increased at high frequencies. Under short circuit, the residual polarization intensity of PZT-5H decreases sharply due to impact load. While the impact load causes the secondary polarization and the increase of the residual polarization intensity of PZT under open circuit. When the stress is over 45 MPa, the PZT-5H breaks. The formation of cracks causes abnormal discharge voltage and gap discharge.     

无源光网络标准发展及关键技术研究

无源光网络(Passive Optical Network,PON)作为当今接入网的主要技术解决方案,具有带宽使用效率高、传输距离远、抗干扰能力强等特点.通过研究PON技术的发展动态,本文首先归纳了各种PON技术的产生背景和应用特点,整理出各技术间的连接关系及主要标准;其次介绍了PON技术的帧结构,并对带宽、波长、传输模式等PON技术的主要参数进行了汇总;然后将国内外研究热点进行划分,围绕媒体访问控制协议、帧结构、动态带宽分配算法、节能机制等关键技术,阐述了其研究现状及在PON中的重要作用;最后对PON技术的发展趋势进行了展望.     

The PAR(p) Interconfigurations model used by the Brazilian Electric Sector

This study discusses the characteristics of the Periodic Autoregressive model, PAR(p), which is used to generate synthetic series of inflow energies that serve as entries for computer platforms that implement the planning and expansion of the operations of the BES – the Brazilian Electric Sector (SEB – Sistema Elétrico Brasileiro). The methodology for the design of a generating plant is presented in addition to the fundamentals of the “PAR(p) Interconfigurations” Model, which is referred to as the Inflow Energy Generation Model (IEGM) in this study. The major contribution of this study is to provide the first scientific discussion of the representation of multiple configurations using the PAR(p) model. For this purpose, several topics related to the time series are discussed, such as the definition of the model order, the matter of stationarity and the need to address possible outliers. Finally, a case study is presented, wherein the results of the estimation and generation of the described model’s scenarios are demonstrated.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

AT89C2051芯片在车载产品中的应用

本文论述了采用单片机技术研制成功的泊车用超声波测距仪的基本原理,用AT89C2051作为控制器的实现方案,以及采用软件校正的方法,提高了测量精度和整机的可靠性.     

Small‐Sized High‐Power PIN Diode Switch with Defected Ground Structure for Wireless Broadband Internet

This letter presents a small‐sized, high‐power single‐pole double‐throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow‐wave characteristic, the DGS is used for the quarter‐wave (°/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt‐connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt‐type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.     

A note on the value function for constrained control problems

We consider the Mayer optimal control problem with dynamics given by a nonconvex differential inclusion, whose trajectories are constrained to a given set and we obtain a relation between the costate function that appears in the maximum principle and the value function. This relation extends the known conditions existing in the literature for unconstrained problems to those for problems under state constraints.     

浅析医药包装

随着市场经济的深入，医药包装正成为我国经济发展的朝阳产业，文中意在介绍先进的医药包装材料。分析其应用情况及发展趋势和动态。     

SOI光电子集成

SOI（Silicon-on-Insulator)光电子集成已成为十分引人注目的研究课题，其工艺与CMOS工艺完全兼容，可以实现低成本的SOI基整片集成光电子回路。本文综述了近几年来SOI集成光电子器件的发展以及一些最新的研究进展，着重分析几种最新型光无源器件的工作原理和结构，包括SOI光波导、SOI光波导耦合器、SOI光波导开关、相位阵列波导光栅（PAWG）、基于SOI的光探测器等，并介绍了中国科学院半导体所集成光电子国家重点实验室的研究进展。