Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices

In this work we discuss the influence of the donor-like surface state density (SSD) on leakage currents and the breakdown voltages of AlGaN/GaN heterostructure field-effect transistors (HFET) at high temperature reverse bias (HTRB) step stress. A method to extract charges at the surface by high voltage capacitance voltage (HV–CV) profiling of the gate–drain diode of a HFET is presented. Two samples with different surface passivation are compared. The SSD of the first sample is found to be similar to the polarization charge, whereas it is elevated by a factor of three on the second sample. The influence of the SSD on the electric field is investigated with electroluminescence (EL). The elevated SSD of the second sample engenders severe deficiencies in robustness found in the HTRB. The stress data, the simulation model and the images of EL indicate that the catastrophic failure arises in the dielectric underneath the gate field plate (GFP).     

Multicolor nanofiber based organic light-emitting transistors

Self-assembled, molecular crystalline nanofibers form microscale light-emitters for future nanophotonic applications. Such organic nanofibers exhibit many interesting optoelectronic properties, including polarized photo- and electroluminescence, waveguiding, and emission color tunability. Surface-grown nanofibers from two different molecules are implemented in an organic field-effect transistor platform by a double roll-printing scheme. Roll-printing multiple types of nanofibers onto the same device provides a fast and simple alternative to multilayer devices. The combination of nanofibers made from para-hexaphenylene and 5,5′-di-4-biphenyl-2,2′-bithiophene results in a nanofiber based organic light-emitting transistor (OLET) which emits both blue and green light. A comparison of measured electrical transport and electroluminescence (EL) properties results in a correlation between the threshold voltage for transport and the onset voltage for EL emission.     

Highly efficient polymer blends from a polyfluorene derivative and PVK for LEDs

The photophysical and electroluminescent properties of blends of a polyfluorene derivative of the PPV type, poly[(9,9-dihexyl-9H-fluorene-2,7-diyl)-1,2-ethenediyl-1,4-phenylene-1,2-ethenediyl] (labeled as LaPPS16) and poly(vinylcarbazole) - PVK are presented and discussed in terms of the operating light emission mechanisms. Static and dynamic fluorescence measurements and morphology data showed a powerful exciton migration from the host (PVK) to the guest (LaPPS16) resulting in emission coming from solely LaPPS16, even when in concentrations small as 1%. Electroluminescence was greatly enhanced with the blending; increases of 18 times in efficiency and 20 times in luminance were achieved in the blend containing 20% LaPPS16, with 3 V applied voltage.     

Growth and characterization of ZnO nanowires on p-type GaN

ZnO nanowires were grown by catalyst-free metal-organic vapour-phase epitaxy on top of a p-type GaN buffer. The optical properties of the ZnO nanowires were investigated by temperature-dependent and time-resolved photoluminescence and compared to those of ZnO nanowires directly grown on sapphire. The luminescence intensity decrease with temperature of the nanowires grown on GaN reveals an original behavior since it is constant over 120 K, showing the existence of strong localization centers. In addition, the temperature-dependent decay time measurements indicate a lower density of non-radiative channels for the nanowires grown on GaN.     

Direct and indirect radiative recombination from Ge

Both direct and indirect band gap transitions are observed in Ge by photoluminescence and electroluminescence. The relative emission intensity of direct band gap transition with respect to indirect band gap transition increases with the increase of the n type doping level, optical pumping power, injection current density, temperature, and strain. The enhancement of direct band gap transition is due to the increase of electron population in the direct valley by reducing the difference between direct and indirect band gaps. The reduction of direct and indirect band gaps can be extracted from the emission spectra with direct and indirect transition models. The defects and the thickness dependent reabsorption are responsible for the relatively strong direct band gap transition in the Ge-on-Si sample as compared to bulk Ge.     

Near-infrared electroluminescence from double-emission-layers devices based on Ytterbium (III) complexes

We investigated near-infrared electroluminescence properties of two lanthanide complexes Yb(PMBP)₃Bath [PMBP = tris(1-phenyl-3-methyl-4-(4-tert-butylbenzacyl)-5-pyrazolone); Bath = bathophenanthroline] and Yb(PMIP)₃TP₂ [PMIP = tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone); TP = triphenyl phosphine oxide] by fabricated the double-emission-layers devices. From the device characteristics, it is known that holes are easier to transport in Yb(PMIP)₃TP₂ layer and electrons are easier to transport in Yb(PMBP)₃Bath layer, at the same time, both of the two complexes can be acted as emission layers in the device. The recombination region of carriers has been confined in the interface of Yb(PMIP)₃TP₂/Yb(PMBP)₃Bath, and pure Yb^3 + ion characteristic emission centered at 980 nm has been obtained. The device shows the maximum near-infrared irradiance as 14.7 mW/m² at the applied voltage of 17.8 V.     

Rapid thermal annealing effects on atomic layer epitaxially grown Zns:Mn thin films

ZnS:Mn thin films were coated on transparent conducting layer indium tin oxide (ITO) 2×2 in. glass substrates by an atomic layer epitaxy process. Grazing-angle X-ray diffraction on thin films shows a phase-pure ZnS with a wurtzite structure oriented along the 002 direction. Photoluminescence and CL measurements were carried out on the films. The emission from ZnS:Mn thin films consists of two strong bands at 515 and 452 nm with an excitation band at 329 nm. For improved brightness, the samples were annealed in a rapid thermal annealing furnace under different gas atmospheres (N₂, O₂ and forming gas) so that the green emission was increased. The green emission is due to donar-acceptor combination. Promising results were obtained when the thin films were annealed in forming gas at 600°C for one minute. Scanning electron microscope micrographs showed that the particles are well crystallized, with a grain size of 0.3–0.5 μm. This paper reports the particle size and morphology on the luminescent characteristics of a Mn²⁺ center in ZnS thin films. Received: 16 April 1999 / Reviewed and accepted: 21 April 1999     

多孔硅的可见光谱发光现象及其应用前景

在可见光谱内,多孔硅的发光现象及其广阔的应用前景激发了人们对这种潜在光电子学材料的巨大研究兴趣。本文介绍了多孔硅的结构、制备方法和形成原理,着重从纳米结构量子尺寸效应的角度,讨论了多孔硅的能带展宽现象和可见光的发射机制,并评述了这种材料在实际应用中的重要价值与原型器件的发展状况。     

Control of Electrophosphorescence in Conjugated Dendrimer Light‐Emitting Diodes

We present a novel platinum porphyrin based phosphorescent dendrimer for use as a triplet harvesting dopant in organic light‐emitting diodes. Two types of dendritic host materials are used. Through the choice of a common branching architecture around the emissive chromophore unit of both guest and host materials, we are able to achieve excellent miscibility. The relative contribution of guest to host emission is found to depend strongly on the energy level offsets of the two blend materials, indicating strong trapping processes. Under pulsed operation, we observe a striking dependence of the emission spectrum on pulse period, independent of the host material used. This spectral modification is attributed to the quenching of triplet excitations at high excitation densities. We find excellent agreement between our measured data and a model based on bimolecular recombination.     

Characteristics of n-type ZnO nanorods on top of p-type poly(3-hexylthiophene) heterojunction by solution-based growth

We report that ZnO nanorods (NRs) are grown on an organic layer of poly(3-hexylthiophene) (P3HT) using a modified seeding layer. Thus, ZnO NRs/P3HT heterojunction light-emitting diodes could be fabricated using the hydrothermal method, in which ZnO acts as an n-type material and P3HT as a p-type material. The ZnO NRs improve the electron transportation in the devices. A three-fold enhancement of current density of the device is observed due to the NRs formed on the P3HT. The electroluminescence (EL) of the optimized ZnO-based device is 1.5 times larger than that without NRs. The influence of the P3HT thickness for the EL spectrum is also discussed.