提高托盘利用效率的重要手段——电子信息化管理

托盘能否有效运用对物流的畅通与否关系重大,这已经引起了国内外专家和学者们的重视,并就此制定了托盘电子信息化管理系统,旨在更合理地使用托盘,推进托盘一体化和共用系统的建立。而RFID技术在托盘的电子信息化管理的应用更将大大提高物流的效率与准确性,托盘电子信息化管理将成为今后托盘管理的趋势。     

基于手写笔的多功能电子白板系统的实现

该文针对当前电子白板系统对个性化支持的不足,引入手写笔作为输入设备,充分利用其功能参数,设计开发了具有模拟毛笔、钢笔、铅笔等真实笔特征的多笔型功能的电子白板系统。     

引入激光回馈的双光束干涉效应的研究

提出了一种引入He-Ne激光回馈的双光束干涉系统,并在理论和实验两方面进行了研究。实验中对系统中的干涉信号及激光器尾光功率变化同时进行探测。发现当干涉仪的主回馈镜移动时,激光器尾光信号是正弦形波形,而干涉仪输出的是以双峰为一个周期的信号,双峰中一峰总是高于另一峰,并且当主回馈镜移动方向改变时,同一周期中两峰出现的顺序也随之改变。对实验现象进行了理论分析,并模拟出干涉信号及激光自身功率的变化曲线。理论分析及模拟结果与实验结果完全吻合。讨论了利用发现的现象进行测量的可行性,所提出的测量方法易于实现。     

一类非线性MIMO不确定系统的动态输出反馈镇定

考察其标称系统的相对阶大于{1,1,…,1}同时含匹配和非匹配不确定性的MIMO 非线性系统的动态输出反馈镇定问题.文中直接用Lyaunov方法构造一类输出反馈动态补 偿器,该补偿器可以实现对所论非线性不确定系统的动态输出反馈渐近镇定.     

光互连技术的研究现状及发展

本文首先总结了光学互连的主要实现途径，然后评述了光互连的研究现状与最新发展，通过对存在的问题分析，最后给出了有关的结论。     

一种新型电子显示屏的研制

本文介绍一种不同于磁性翻牌显示屏和ＬＥＤ显示屏的新型电子显示屏，采用非发光体，针对显示屏彩色和动画图象对象素的要求，讨论了显示屏象素的多面色体变换的电路设计及软件实现。     

Quantitative feedback theory with applications in welding

Two different control systems were developed using quantitative feedback theory for weld quality improvement. The first application to be discussed was designed for the resistance pinch welding process and uses electrode displacement and force as feedback parameters. A correlation between weld quality and electrode displacement is established for constant electrode force. The system is capable of producing repeatable welds of consistent quality, with wide variations in weld parameters. This is the first time feedback control has been successfully applied to pinch welding. The second example presented in this paper was developed for penetration control of the gas-tungsten-arc welding process. The feedback signal is obtained by measuring the amount of light emitted from the back side of the weld. Welds of constant penetration have been demonstrated in tests with travel speeds varying from 1.5 to 6 inches per minute and with 200 per cent changes in part thickness.     

Electronic properties of Fibonacci quasi-periodic heterostructures

We study the electronic states of different GaAs-AlAs Fibonacci quasi-perodic heterostructures grown along the (001) direction. We employ an empirical tight-binding Hamiltonian including spin-orbit coupling together with the surface Green function matching method. We present results for the eighth Fibonacci generation formed from different building blocks. We compare these results with those of the constituent quantum wells and with those of heterostructures containing the same number of GaAs and AlAs slabs after periodic repetition of the building blocks. No Fibonacci spectrum is found in the energy regions near the conduction and valence band edges of GaAs. A selective localization of the local density of states in the GaAs layers is found for many electronic states.     

Exoatmospheric interception problem solved using output feedback law

Interception problems are often dealt with by separating guidance and autopilot design. Guidance law can be obtained using optimal control theory and autopilot design is performed on a linearized system. In this paper, we introduce a new approach that determines a global guidance and autopilot law, based on direct output feedback design. Application of this method to exoatmospheric interception problem results in good performances. Extension to endoatmospheric case is under investigation.     

Effects of gallia additions on sintering behavior of gadolinia-doped ceria

The effects of gallia additions on the sintering behavior of gadolinia-doped ceria were systematically investigated from the following aspects: the variation in sintered density, the variation in grain size, and the existing forms of Ga₂O₃ in CeO₂.Sintered density increased with increasing Ga₂O₃ content up to 5 mol.% and then it decreased with further addition of Ga₂O₃. Grain size also increased with increasing Ga₂O₃ content up to 5 mol.% and then decreased with further addition of Ga₂O₃. Decrease in grain size was caused by a pinning effect of Ga₂O₃ precipitation at grain boundaries. Lattice constant decreased with increasing Ga₂O₃ content up to 5 mol.%. This decrease will be due to the substitution of smaller Ga³⁺ ions for Ce⁴⁺ ions in the CeO₂ structure. According to the results obtained from scanning electron microscope (SEM) and X-ray diffraction (XRD) analyses, the solubility limit of Ga₂O₃ in Ce_0.8Gd_0.2O_1.9 ceramics can be estimated to be nearly 5 mol.%. The addition of Ga₂O₃ up to the solubility limit was found to promote the sintering properties of Gd₂O₃-doped CeO₂.