Chemical mechanical polishing of polymer films

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO₂) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.     

Motion Perception Using Analog VLSI

Motion perception is arguably a fundamental mechanism used by natural species to accomplish a number of tasks, such as navigating freely in an unknown environment. Traditional motion perception methods tend to be computationally intensive, requiring powerful computers and large memories. However, by copying biological mechanisms, such as elementary motion discrimination at the early stages of the visual processing paths, it should be possible to build small and efficient motion perception systems. This paper describes the manner in which a simple motion perception model based on the insect visual system has been implemented using mixed analog/digital VLSI. The device has been fabricated in a 2 micron double metal, double polysilicon process, and comprises 61 photo-detectors, and associated analog and digital circuitry. While not entirely successful in that component mismatches hamper the detection of dark-to-bright changes in contrast, the results clearly show the feasibility of using such a device in autonomous control systems.     

CIMS环境中的数据模式转换

本文在分析CIMS环境中数据模式冲关类型的基础上，提出一种互连数据库系统模式结构，论述了在异构数据库集成中解决模式冲突的基本方法．在这种方法体系中，不需要建立整个企业的全局数据模式，各局部DBA以简单的方式定义应用所需的模式变换，系统根据这种定义自动完成各种转换，使用户看到的模式和数据结果与应用要求的一致．     

Synthesis and characterization of poly(ethylene aspartate)-metal complexes

Poly(ethylene aspartate) [PEA] was synthesized by the melt condensation of D,L-aspartic acid and ethylene glycol. PEA containing pendent amino and carbonyl groups in its repeating chain was used as the polymeric ligand for complexation with transition metal ions, viz. Co(II), Ni(II), Cu(II), Mn(II), Zn(II), Cd(II), Ca(II), Mg(II), Pb(II) and Hg(II). Complexation was found to be most effective in DMSO. The resulting polyester-metal complexes were solid coloured materials which have been characterized by IR spectroscopy, elemental analysis and magnetic susceptibility measurements. The thermal stability of the polyester-metal complexes was investigated by thermogravimetric analysis (TGA). On the basis of the physico-chemical studies, an oxygen and nitrogen coordinated structure for the polyester-metal complexes is proposed.     

牙鲆淋巴囊肿病的PCR诊断方法研究

以中国养殖牙鲆 (Paralichthysolivaceus)淋巴囊肿病毒 (Lymphocystisdiseasevirus,LCDVcn)主要衣壳蛋白 (majorcapsidprotein ,MCP)基因的中间保守序列为目标基因 ,设计了一对特异性引物。该引物可扩增出 172bp的病毒DNA片段 ,其最小DNA检出量为 0 0 183ng。用PCR法从人工感染淋巴囊肿病毒 3天的牙鲆血、鳃、肝、脾、肠、胃及自然发病牙鲆的肿瘤中 ,分别检测到了LCDV的存在。本实验结果证明 ,PCR法对于早期检测LCDV是十分有效的。     

通用串行总线(USB)数据传输模型

USB作为一种数据传输接口，了解它的通信传输机制是正确利用USB利用数据传输的基础，分层次结构对USB数据传输模型加以分析，可以使读者建立起USB体系结构、通信模型和总线事务的框架和概念，并最终对USB传输工作流程有一个清晰的认识。     

发展我国冻干蔬菜产业大有可为

本文介绍了真空冷冻干燥食品的发展现状、特点及其工艺流程 ,着重讨论了发展冻干食品工业的广阔前景     

测井数据实时采集与接口设计

介绍了一种采用改进型的ＣＬＳ３７００数控测井系统对微电阻率扫描仪数据采集与控制接口的设计及实现方法。基于ＣＬＳ３７００数控测井仪和ＦＭＳ仪采用８９Ｃ５１单片机设计出通信接口，解决了微电阻率方法。基于ＣＬＳ３７００数控测井仪和ＦＭＳ仪采用８９Ｃ５１单片机设备出通信接口电路，解决了微电阻主扫描仪现现场实时处理中的瓶颈问题。     

STI process steps for sub-quarter micron CMOS

This paper presents Shallow Trench Isolation (STI) process steps for sub-1/4 μ CMOS technologies. Dummy active areas, vertical trench sidewalls, excellent gap filling, counter mask etch step and CMP end point detection, have been used for a 0.18 μm CMOS technology. Electrical results obtained with a 5.5 nm gate oxide thickness show good isolation down to 0.3 μm spacing. Good transistor performances have been demonstrated.     

复杂目标近场电磁散射的可视化计算方法

首次介绍了复杂目标近场散射计算的可视化方法。采用非均匀有理Ｂ样条曲面（ＮＵＲＢＳ）精确构造任意形状散射体，结合几何体近场透视变换和Ｚ－Ｂｕｆｆｅｒ技术实现了基于Ｗｉｎｄｏｗｓ平台的近场散射计算。提出广义雷达散射截面的概念并给出的若干算例。该方法充分利用了计算机３Ｄ图形设备的几何运算能力，运算速度快，严谨高，可扩展性好。