钒冶炼焙烧添加剂选择研究

对小型钒冶炼厂焙烧工艺所用添加剂进行改进的可能性进行了探讨，研究了几种常用添加剂的焙烧条件，分析比较了其性能，提出用ＮａＣｌ－Ｎａ２ＣＯ３作焙烧添加剂替代ＮａＣｌ可大幅度减少大气污染，提高冶钒转化率；且不改变工艺流程，无需设备投资，具有较好的经济效益和环境效益。     

用AIR-C2H2原子吸收光谱法测定镉镍电池正极浸渍液中钴含量

本文主要简述与运用AIR-C2H2原子吸收光谱法进行镉镍电池正极浸渍液中钴含量的测定，介绍了钴最佳测定条件及呈良好线性范围的浓度。同时对样品消化处理条件，在测定中样品的干扰因素进行了综合考虑，该方法具有很好的灵敏度，很好的重复性，干扰小，同时具有方法步骤简单，操作容易掌握等特点，对样品钴含量的测定，其相对标准偏差均小于1.0%（n=6），标准加入回收率均在97.0%～102.0%(n=5）范围内，结果表明，运用AIR-C2H2原子吸收光谱法测定镉镍电池正极浸渍液中钴含量的分析，达到了实验室分析质量控制的要求，完全适用于镉镍电池正极浸渍液中钴含量的控制分析和样品系统分析。     

电解法烟道气二氧化硫在线监测系统的设计

介绍了一种烟道气中SO2在线检测系统，该系统可以实现24h不间断地监测烟道气中SO2的体积分数和质量浓度，同时将信息经网络传送给环保有关部门，具有一定的新颖性、可靠性、准确性。     

Processing and properties of zirconia-toughened alumina ceramics

Al₂O₃:ZrO₂ ceramics have been prepared from physically mixed pure oxide powders. The results indicate that careful processing of the starting powders and a two-stage sintering process can avoid expensive processing methods like hot pressing/hot isostatic pressing used for achieving high densification. The mechanical properties were measured and the resultant microstructure studied to explain the toughening behaviour of this material.     

Dislocations and flux pinning in YBa2Cu3O7

The dislocation structures of bulk textured and epitaxial thin film YBa₂Cu₃O₇ superconductors are examined. Correlations between increases in flux pinning and dislocation densities are noted. A model for flux pinning by individual dislocations is presented. This gives a treatment of strain induced effects and effects of normal state region interactions. It is shown that the values of pinning predicted are in line with experimental observations.     

Yeast sequencing reports. Isolation and sequence analysis of a gene from the linear DNA plasmid pPAC1–2 of Pichia acaciae that shows similarity to a killer toxin gene of Kluyveromyces lactis

The toxin-encoding linear plasmid systems found in Pichia acaciae and Kluyveromyces lactis yeasts appear to be quite similar, both in function and structural organization. By Southern hybridization, a linear plasmid of P. acaciae, pPac1–2, was found to hybridize to the second open reading frame (ORF2) of K. lactis plasmid pGKL1, known to encode the α and β subunits of the K. lactis toxin. A 1·7 kbp segment of pPac1–2 DNA was cloned, sequenced and shown to contain four regions of strong homology to four similarly oriented regions of K. lactis ORF2. This 1·7 kbp fragment also contained an ORF of 1473 bp that could encode a protein of ～ 55·8 kDa. Like the α subunit gene of K. lactis ORF2, a very hydrophobic region occurs at the N-terminus, perhaps representing a signal sequence for transport out of the cell. Unlike K. lactis ORF2, however, the encoded polypeptide is much smaller and lacks a recognizable domain common to chitinases. The structure of a toxin that includes the translation product of this P. acaciae ORF would likely be quite different from that of the K. lactis toxin. Analysis of the upstream region of the P. acaciae ORF revealed an upstream conserved sequence identical to that found before ORFs 8 and 9 of pGKL2. A possible hairpin loop structure, as has been described for each of the four K. lactis pGKL1 ORFs, was found just upstream of the presumed start codon. The similarity of the promoter-like elements found in the linear plasmid genes of these diverse yeasts reinforces the idea of the existence of a unique, but highly conserved, expression system for these novel plasmids. The sequence has been deposited in the GenBank data library under Accession Number U02596.     

ZrO_2（Y－TZP）－Si_3N_4复合材料中抑制ZrN生成研究

研究了气氛加压烧成ＺｒＯ２（Ｙ－ＴＺＰ）－Ｓｉ３Ｎ４复合材料中抑制ＺｒＮ生成工艺问题，相组成分析表明：无论添加２０ｗｔ％工业ＺｒＯ２或者Ｙ－ＴＺＰ（３ｍｏｌ％Ｙ。Ｏ。）的氯化硅复合材料，在低于１８５０℃，３ＭＰａｋ气压力下烧成，表面无ＺｒＮ生成．通过加入有效的烧结助剂（Ｙ。Ｏａ＋ＡＩ。Ｏｓ）、增加埋粉中ＳＩＯ分压以及增加保护气氛氮气压力，适当的烧成条件等工艺措施可有效地抑制ＺｒＮ的生成．实验还证实了ＺｒＮ很容易氧化，含有ＺｒＮ的ＺｒＯ。（Ｙ－ＴＺＰ）－ＳｉｓＮ。复合材料试样经９００℃，０．ｓｈ热处理已粉碎性裂开．     

Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor

~~Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor     

电视节目制作中的压缩格式

电视节目制作系统中存在着几种格式的压缩问题 ,对几种压缩方式及其优缺点进行了分析。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.