金属钝化剂的合成和应用

简要介绍了金属钝化剂的品种和合成方法及在PE、PP、PS等聚合物材料上的应用。     

全金属反射光学系统结构的有限元分析

用有限元分析方法对全金属反射光学系统在各种受力状态下的变形、应力及固有频率做了全面的分析，并给出了结构多次优化后的分析结果。     

硒化铅光导型红外探测器的电极选择

本文主要介绍硒化铅光导型多元红外探测器的电极材料选择和电极的制备工艺。     

Chemical vapor deposition of aluminum for ulsi applications

Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition process for Al has been actively investigated for the application in ultra large scale integration. In this review, various precursors, mainly alkyl aluminum and alane compounds, and reaction mechanisms of these precursors in Al CVI) are described. Epitaxial growth and selectivity of the deposition are also discussed. In addition to thermal reactions, plasma and photochemical reactions are also briefly described.     

提高大口径金属主镜面形精度的方法

分析了影响Ｒｉｔｃｈｅｙ－Ｃｈｒｅｉｔｉｅｎ光学系统中金属主反射镜面形精度因素，采用有限元法对立交易的加工过程及其安装进行了模拟，指出提高主镜的面形镜度，既要合理主镜材料的热处理工艺，也要对加工参数进行控制。良好的稳定化处理可以有效地消除材料内部的残余应力，保证主镜尺寸的稳定性。提高加工基准的精度，并采用组合加工镜面，可以大大提高主镜的面形精度，最后，给出了主镜的干涉仪检测结果。     

厚膜导体的金属迁移研究

金属迁移能导致混合微电路发生灾难性失效。本文介绍一种简单易行的测试方法－水滴试验法，来测量厚膜电路的实际金属迁移率。用引方法测量时，发现Ｐｄ－Ａｇ导体的迁移率最大，Ｐｔ－Ａｕ导体的金属迁移率最小。     

煤矿微机安全生产监测监控系统

本文介绍了分站式系统、无分站式系统以及复全式系统的特点，主要论述了复合式微机安全生产监测监控的结构、性能和应用。     

阳极炉重油供油机组的改造实践

着重介绍了改造前重油供油机组的工艺流程,并针对所存在的问题进行了分析、改进。     

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

In this work, high concentration erbium doping in silicon-rich SiO₂ thin films is demonstrated. Si plus Er dual-implanted thermal SiO₂ thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to 10 at.% or the doping level of 10²¹ atoms cm⁻³, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO₂ matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO₂ films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO₂ matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.