β放射性气体浓度计的新分度方法

本文介绍β放射性气体浓度计的一种新的分度方法——泄漏元件排气法。其特点是一只元件可分度放射性气体浓度计的许多读出数(甚至是几个量程),操作方便。     

MGD工艺技术的特点

应炼油厂要求，FCC既要多产柴油，又需多产液化气，石油化工科学研究院开发了MGD工艺。该工工艺遵循催化裂化的反应机理，把分段进料和汽油回炼紧密组合为一个体系，较好地达到了用掺渣油原料多产柴油和液化气的目的，其汽油烯烃和硫含量降低。从而使炼油厂调合汽油达到产品规格。工艺实施容易，改造投入少、见效快，受到炼油厂欢迎，并迅速推广应用。浅释了MGD工艺的反应机理，并提出了应用中应该注意的问题。     

Vinyl acetate monomer—a pilot plant study

The kinetics of the reaction of acetic acid and acetylene over zinc acetate-activated carbon catalyst was investigated over a wide range of process variables in a pilot reactor. Although various catalytic reaction mechanisms were postulated, the rate of reaction was most satisfactorily correlated by a mechanism of surface reaction between charged adsorbed acetic acid and acetylene, which assumes that the rate controlling step was the irreversible charged adsorption of acetylene and acetic acid.     

除氧化物剂的除氧机理浅析

对无缝钢管生产所用的内壁除鳞材料———除氧化物剂中各个组分的性质和作用进行了阐述,提出了除氧化物剂的除氧机理。     

APDT-00三极放电管全自动打印机的研制

介绍了新近研制的APTD - 0 0三极放电管全自动打印机的结构特点及整机设计的关键技术 ,阐述了自动上料机构、打印机构和控制电路的设计     

Deposition mechanisms in langmuir-blodgett films

As part of a study of the possible application of polymerisable Langmuir-Blodgett (LB) films as ultra-fine-line e-beam resists, an investigation of the variation of film structure of 22-tricosenoic acid with differing deposition conditions has been made. Unexpected effects with significant implications for deposition speed and resist sensitivity have been observed, and the new techniques for film characterisation developed during the investigation have resulted in a revised model of deposition explaining the observed independence of the disorder causing optical scattering and the macroscopic features observed by polarised microscopy.     

一步法合成松香改性酚醛树脂

探讨了一步法合成松香改性酚醛树脂的反应机理，确定了最佳原料组成及合成工艺，由此制备出高溶解粘度和矿油容纳度的松香改性酚醛树脂，是一种性能优异的高级胶印油墨连接料     

Studies on Catalytic Side-Chain Oxidation of Nitroaromatics to Aldehydes with Oxygen

The side-chain oxidation of 2-nitrotoluene in liquid phase in the presence of catalytic amount of manganese sulfate and stoichiometric amount of potassium hydroxide with oxygen was studied. In the most favorable conditions, over 80% of conversion of 2-nitrotoluene and 50% of selectivity to 2-nitrobenzaldehyde was achieved. Effects of the reaction parameters on the conversion of the reactant and the selectivity of the product were examined. These results, together with EPR spectroscopic study, show that a benzyl anion was formed in the early stage of the reaction, which was then converted to the final product via a free radical mechanism.     

硝酸铵的膨化机理研究

膨化硝酸铵是一种自敏化改性硝酸铵,由硝酸铵溶液在专用表面活性剂作用下,经真空强制析晶工艺制得.文中研究了膨化硝酸铵制备的膨化过程和专用表面活性剂的作用,结果表明:在真空和表面活性剂作用下,硝酸铵溶液由不饱和状态至饱和状态,进而达到过饱和状态,最终导致硝酸铵的快速结晶和体系的膨胀.在真空干燥过程中,形成中心空穴、微细孔道和裂缝,它们使膨化硝酸铵的起爆感度提高;专用表面活性剂具有降低硝酸铵溶液表面张力、发泡剂和加快结晶成核的作用.     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.