Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes

Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C and characterized the produced devices consisting of a p⁺-Si contact electrode, a suspended Si nanochannel, and a polysilicon contact electrode. Both the electrodes and connecting lines are made of Si-based materials by conventional low-pressure chemical vapor deposition. The results indicate that these devices can act as gate-controllable Schottky diodes in integrated nanocircuits.     

LPCVD法在GaN上生长Ge薄膜及其特性

本文报道了在GaN/蓝宝石作衬底生长Ge薄膜材料的外延生长及其特性研究。研究了不同外延生长条件。结果表明,使用低压化学气相外延技术在GaN/蓝宝石衬底复合衬底上可以生长Ge薄膜。高分辨X射线衍射谱研究得到了峰位分别位于2θ=27.3°、2θ=45.3°和2θ=52.9°的Ge峰.原子力显微镜研究表明得到的Ge薄膜的表面粗糙度为43.4nm。扫描电子显微镜研究表明生长的Ge/GaN/蓝宝石具有清晰的层界,表面Ge晶粒致密并且分布均匀。Raman谱表明所生长的Ge的TO声子峰位于299.6cm-1,这表明了生长的Ge薄膜具有良好的质量。     

Effect of post deposition reduction treatment of YIG thin films on stabilizing cubic garnet phase

Yttrium iron garnet thin films have been prepared by low pressure metallo-organic chemical vapour deposition method (MOCVD). Dipivaloyl methanates of yttrium and iron have been used as the precursors in the MOCVD growth of the garnet films. Post deposition O₂ annealing at 900°C is required to form a garnet phase which also shows orthoferrite and component Y₂O₃ and α-Fe₂O₃ phases. We show that a partial H₂ reduction treatment minimizes secondary phases and stabilizes the garnet phase. These treatments also enhance the magnetic properties considerably. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

PI衬底柔性透明硅薄膜太阳能电池的制备及性能

利用硬质玻璃为载板,采用传统硅薄膜太阳能电池生产设备,在聚酰亚胺(PI)塑料薄膜衬底上沉积了B掺杂的ZnO(BZO)薄膜,并以此作为前电极制备了单节电池结构及多节串联一体结构的非晶硅(a-Si)太阳能电池;研究了PI衬底上BZO薄膜的光学及电学性能。结果表明,PI衬底上沉积BZO薄膜后在300~1 200 nm波长范围的透光率为76.63%,方块电阻19.7?/□。所制备的单节和多节串联一体结构的a-Si薄膜太阳能电池的转化效率分别达到6.45%和5.1%,封装后电池组件具有一定的透光性,透光率约达到30.2%。     

LPCVD多晶硅薄膜缺陷的形成及消除措施

描述了LPCVD多晶硅的常见缺陷及其分类。对缺陷产生的原因进行了分析,找出工艺设置和工艺操作过程容易出现的问题;并针对各类缺陷,提出了相应的解决措施,以达到完全消除缺陷,使工艺技术水平得到提升。     

半绝缘多晶硅薄膜的制备与应用

本文对ＬＰＣＶＤ半绝缘多晶硅（ＳＩＰＯＳ）薄膜工艺进行了研究，分析和讨论了工艺参数对薄膜淀积过程以及性能的影响。并较详细介绍了ＳＩＰＯＳ薄膜在高压功率器件领域的应用。     

LPVCD的原理与故障分析

文中介绍了CVD工艺的种类和特点。以LPVCD为例,介绍了其工艺的基本原理,以及设备的基本结构。根据多年的设备维护经验,分析了LPCVD设备的常见问题,提出了处理措施。最后,总结出了LPCVD设备的工艺维护方法。     

Numerical analysis of LPCVD of SiO2 films from diethylsilane/oxygen

A mathematical model has been developed to explore the low pressure chemical vapor deposition (LPCVD) of silicon dioxide from diethylsilane (DES)/oxygen in a horizontal hot-wall reactor. We propose a new kinetic mechanism that includes realistic gas-phase and surface reactions. The partial differential equations in two-dimensional cylindrical coordinates are solved numerically by a control-volume-based finite difference method. The model successfully describes the behavior of the experimental data. Film growth rate and uniformity are studied over a wide range of operating conditions including deposition temperature, pressure, reactant flow rate, and distance between the inlet and the wafer. The predicted results show that parasitic gas-phase reactions become significant at higher pressures and temperatures resulting in a decrease in deposition rate. It is seen that the deposition rate becomes a maximum at the O₂/DES ratio of around 2.5. A temperature of 475‡C a pressure of 0.75 torr, and a total flow rate of 1,000 sccm are found to be desirable for obtaining both high deposition rate and good film uniformity.