宝钢钢管IPSEN炉炉温调节仪表的改造

在宝钢钢管调质炉(IPSEN炉)控制系统的改造中,用西门子S7-400的PID功能软件模块改造原模拟调节器,以实现加热调质温度控制.介绍了用S7-400的PID控制模块构成淬火炉、淬火油槽、回火炉温度控制的方法,并由此提出对宝钢钢管生产中其它加热炉控制系统改造的选择方案.     

Nonlinear coupled problems in dynamics of shells

The coupled system of three partial differential equations governing a flexible shallow shell dynamics is analysed. No any prior assumptions about the temperature distribution through the shell thickness are applied. The efficiency of the method used here when applied to the solution of integral-differential equations with different dimensions (three-dimensional equations related to the Kirchhoff-Love model) and of different type (heat transfer equations and the hyperbolic equations of shell theory) is demonstrated. Many computational results are reported and discussed.     

Low surface energy films based on partially fluorinated isocyanates: the effects of curing temperature

Self-stratification strategy can be used to prepare films in which both bulk and surface properties can be optimized. By using this approach, only a very small quantity of fluorinated species is needed to generate a surface with low surface energy. When cross-linking is involved during film formation, we are dealing with a competition behavior between the diffusion of fluorinated species and the formation of cross-linked network. In this study low surface energy polymeric films were prepared on the basis of partially fluorinated polyisocyanates, in combination with hydroxyl-end-capped three-armed solventless liquid oligoesters and modified hyperbranched polyesters. At a fluorine concentration of only 0.5 wt.%, contact angles of water and hexadecane can reach 120° and 80°, respectively. A surface energy as low as 10–15 mN/m can be obtained upon the addition of less than 1 wt.% of fluorine in the films. It was shown, from real time ATR-FTIR and contact angle measurements, that the curing temperatures demonstrated significant effects on the cross-linking rate as well as on the wettability of the films.     

关于离子注入中温升的探讨

本文在理论和试验两个方面探讨了离子注入中的热效应和温升现象。注入样品的温升对离子注入层的性能有直接影响。分析了理论计算注入样品温升的一些情况。给出了实际测量注入样品温升的几种试验方法。阐明了控制注入样品温升的若干可能途径。     

Experimental investigation of natural convection from a horizontal ice surface melting in pure water

A study on natural convection from a horizontal ice surface melting in pure water was conducted experimentally for the ambient water temperature from 2▿C to 10°C. Natural convection flow around upward-or downward-facing horizontal ice plate was divided into three regions according to the temperature variation of ambient water. The flow patterns of three regions were no flow, two-dimensional steady laminar flow and unsteady flow. Mean Nusselt number for the upward-facing surface had its maximum value at about 3°C of ambient water temperature. However, in the case of the downward-facing surface it increased as the ambient water temperature increased.     

近程地对地战术导弹的作用与问题

海湾战争中,“爱国者”导弹成功地拦截了“飞毛腿”导弹,给近程地对地战术导弹的作用、发展与装备方向提出了值得思考的问题。本文着重讨论在局部战争中,近程地对地战术导弹的作用、使用场合及其技术发展方向。     

Behavior of a Semiintegral Bridge Abutment under Static and Temperature-Induced Cyclic Loading

This paper presents the results of an experimental study of semiintegral bridge abutments. Primary interests were to investigate (1) potential problems with the particular detail tested; (2) rotational characteristics of the semiintegral abutments; and (3) ability of the specimens to withstand cyclic loading induced by temperature variations during the expected life of the bridge. Sixteen experiments were conducted on three large-scale specimens. The results of the tests have shown that semiintegral abutments can significantly reduce the moments transferred from the superstructure to the foundation piles. Test results have also shown that semiintegral abutments can tolerate the number of displacement cycles that a bridge will experience during the course of its economic life.     

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al₂O₃ layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al₂O₃ are presented, too. With this process, surface recombination velocities of 500–1000 cm/s have been attained on mc-Si wafers.