High‐resolution technology for FPD manufacturing

Using shorter wavelength for exposure light is one way to achieve high resolution while keeping sufficient depth of focus. We show exposure results for high resolution to confirm the effect of deep UV exposure light. With deep UV light, 1.2‐µm line and space pattern and 1.8‐µm contact hole pattern are resolved while keeping sufficient depth of focus.     

微机械加工技术─LIGA技术

简要介绍了LIGA（利嘎）工艺过程、特点和应用实例。     

硅基光子晶体板的光刻和反应离子刻蚀

用光刻和反应离子刻蚀的方法对硅材料光子晶体板的制作进行了研究。实验发现,与激光 直写曝光相比,光刻曝光更有利于胶上图形的陡直度。扫描电子显微镜测试表明,反应离子刻蚀后得到深3.3μm,晶格周期10.95μm,占空比50%的孔状光子晶体板结构,孔的陡直度保持较好,基本满足设计要求。     

Submicron machining and biomolecule immobilization on porous silicon by electron beam

Three-dimensional submicrometric structures and biomolecular patterns have been fabricated on a porous silicon film by an electron beam-based functionalization method. The immobilized proteins act as a passivation layer against material corrosion in aqueous solutions. The effects'' dependence on the main parameters of the process (i.e., the electron beam dose, the biomolecule concentration, and the incubation time) has been demonstrated.     

《国际半导体技术蓝图》(2005版)光刻部分解析

对2005年公布的《国际半导体就十时微蓝图》中光刻部分进行了介绍与分析,并与之前的版本进行比较,列出了光刻技术面临的挑战和潜在技术方案。最后指出,浸入式光刻、纳米压印、极紫外光刻和ML2将是未来几年重点研究对象。     

光刻技术及其应用的状况和未来发展

光刻技术及其在产业中的开发应用一直是业界人们关注的焦点之一,概述了目前几种具有潜力的光刻机技术及其应用的状况,同时通过对相关光刻的技术性和经济性比较,简述了其未来的发展。     

Interior-architectured ZnO nanostructure for enhanced electrical conductivity via stepwise fabrication process

Fabrication of ZnO nanostructure via direct patterning based on sol-gel process has advantages of low-cost, vacuum-free, and rapid process and producibility on flexible or non-uniform substrates. Recently, it has been applied in light-emitting devices and advanced nanopatterning. However, application as an electrically conducting layer processed at low temperature has been limited by its high resistivity due to interior structure. In this paper, we report interior-architecturing of sol-gel-based ZnO nanostructure for the enhanced electrical conductivity. Stepwise fabrication process combining the nanoimprint lithography (NIL) process with an additional growth process was newly applied. Changes in morphology, interior structure, and electrical characteristics of the fabricated ZnO nanolines were analyzed. It was shown that filling structural voids in ZnO nanolines with nanocrystalline ZnO contributed to reducing electrical resistivity. Both rigid and flexible substrates were adopted for the device implementation, and the robustness of ZnO nanostructure on flexible substrate was verified. Interior-architecturing of ZnO nanostructure lends itself well to the tunability of morphological, electrical, and optical characteristics of nanopatterned inorganic materials with the large-area, low-cost, and low-temperature producibility.     

蘸水笔刻蚀技术(DPN)影响因素分析

蘸水笔技术(Dip-Pen)是近年来发展起来的一种新的扫描探针刻蚀加工技术,有着广泛的应用前景.该技术是直接把弯曲形水层作为媒介来转移"墨汁"分子,在样品表面形成纳米结构.尖端曲率半径、针尖在基底表面滞留时间、针尖扫描速度、空气湿度、表面粗糙度等均会影响纳米结构的线宽.针尖在基底表面滞留时间与圆半径的平方成一次函数关系,线宽随着尖端半径的增大而变宽,扫描速度与线宽成反比关系.通过控制湿度可以控制"墨水"分子的转移速度,从而影响纳米结构的线宽.线宽随着样品表面粗糙度增加而变宽.