激光三角法测量技术在光刻机中的应用

介绍了激光三角法测量原理和分类,对不同类型进行了分析比较。介绍了CCD的激光三角法高度测量系统在光刻机中的应用及在高度测量时实时和映射两种工作模式。在应用中可以针对不同的测量对象表面的光学特征,使用对应的表格,提高其测量的适应性和测量效率。     

Active wafer shape modulation using a multi-actuator chucking system

Jet and Flash Imprint Lithography has proven to be a viable alternative to optical lithography for fabrication of sub 30 nm nanostructures for large volume semiconductor manufacturing. Machine throughput, overlay and process defectivity that meet and exceed the International Technology Roadmap for Semiconductors (ITRS) are essential for commercial viability of any new lithography technology. Jet and Flash Imprint Lithography uses an inkjet head to dispense a grid of liquid drops on the wafer surface to match the volume requirements of the pattern being imprinted. Wafer shape modulation has been shown to increase imprinting speed significantly by reducing air bubble trapping in the drop interstitial sites. A wafer shape modulation chuck that can address arbitrary field locations and sizes on a wafer with a novel actuation scheme that minimizes the number of actuators while increasing imprinting speed and reducing process defects significantly is presented.     

Flexible electronics: Prediction of substrate deformation during different steps of the lithography process

A numerical model was developed to simulate the micro-deformations of a polymeric substrate due to lithographic processing of different layers of a transistor-like structure. The results of the model were validated with the results from experiments. The model, a mechanical-thermal-hygroscopic model, takes into account the dimensional effects of temperature, moisture and stresses. It also includes the temperature dependent visco-elastic behaviour of the polymer substrate. The model can be used to predict overlay accuracies between different functional layers introduced by the lithographic process. It can also be used to understand the underlying processes such that it provides a tool to improve the overlay accuracy during actual processing.     

Photolithographic Route to the Fabrication of Micro/Nanowires of III–V Semiconductors

Nano/microwires of semiconducting materials (e.g., GaAs and InP) with triangular cross‐sections can be fabricated by “top–down” approaches that combine lithography of high‐quality bulk wafers (using either traditional photolithography or phase‐shift optical lithography) with anisotropic chemical etching. This method gives good control over the lateral dimensions, lengths, and morphologies of free‐standing wires. The behaviors of many different resist layers and etching chemistries are presented. It is shown how wire arrays with highly ordered alignments can be transfer printed onto plastic substrates. This “top–down” approach provides a simple, effective, and versatile way of generating high‐quality single‐crystalline wires of various compound semiconductors. The resultant wires and wire arrays have potential applications in electronics, optics, optoelectronics, and sensing.     

基于低能电子束的光刻技术

讨论了聚焦电子束曝光中的邻近效应问题,阐述了扫描隧道显微镜的原理和工作方式。把扫描隧道显微技术用于低能电子束的光刻,不仅能提高图形的分辨率,而且使电子束加工工艺不再局限于真空环境。对曝光电子的能量和线条宽度之间的关系进行了分析。     

Cover Picture: Large‐Area 3D Nanostructures with Octagonal Quasicrystalline Symmetry via Phase‐Mask Lithography (Adv. Mater. 10/2007)

A novel method for producing large‐area 3D nanostructured quasicrystalline materials uses 2D multiple exposure lithography to produce an octagonal quasiperiodic surface‐relief template (background image). A replica in polydimethylsiloxane is then used as a phase mask to create 3D bicontinuous axial quasicrystalline SU‐8 epoxy nanostructures (see insets), as reported on p. 1403 by Ion Bita, Edwin Thomas, and co‐workers.