Hydrogen absorption by Pd-coated ZrNi prepared by using Barrel-Sputtering System

To improve the durability of hydrogen storage materials against surface poisoning by impurity gases, effectiveness of Pd-coating layer prepared by using a Barrel-Sputtering System was examined for ZrNi powder. The effectiveness of Pd-coating was evaluated by activation temperature, at which Pd/ZrNi poisoned by air could be activated to absorb hydrogen. Characterization of Pd-coated ZrNi (denoted as Pd/ZrNi) by scanning electron microscopy, electron probe microanalysis and X-ray diffraction showed that a uniform Pd-coating layer was formed with the barrel-sputtering system. It was found that the poisoned Pd/ZrNi sample could be activated even at 423 K to absorb hydrogen at room temperature. This exhibits remarkable contrast to bare ZrNi, which could be only activated appreciably above 1073 K. It is concluded that the Pd-coating by barrel sputtering is quite effective to avoid the effect of surface poisoning of powdery hydrogen storage materials. However, the activation at excessively high temperature resulted in the loss of high activity to absorb hydrogen. It was concluded that this phenomenon was associated with reactions between Pd and ZrNi to form PdZr and other byproducts.     

GaP：（N）的背景光谱和发光尖峰

获得高分辨ＧａＰ（Ｎ）光致发光光谱，观察到等电子陷陆束缚激子发光中ＬＯ和ｌｏｃ多声子发射，其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁，并进行了相应讨论，还观察到局域声子效应－－光谱相似定律和相当显著的背景光谱。     

含氮化合物废气选择性催化氧化技术研究进展

通过对当前含氮化合物废气治理技术的对比分析,总结选择性催化氧化的相关技术优势。根据对含氮化合物的种类及来源分析,介绍氨气、腈类、胺类及其他含氮化合物的催化净化技术。重点总结催化剂的种类、研发进展和在实际使用中可能遇到的问题,同时展望含氮化合物废气选择性催化氧化技术的研发方向。     

N-溴丁二酰亚胺／吡啶氧化合成己二酰基双偶氮化合物

以己二酰二氯和不同取代基的苯肼合成了N,N'-二芳基己二酰二肼类中间体,然后在N-溴丁二酰亚胺(NBS)／吡啶氧化体系下室温合成了8种己二酰基双偶氮化合物。第一步反应条件为:n(己二酰二氯):n(取代苯肼)=1:2,反应温度0-5℃,反应时间4 h,收率80%-93％;第二步反应条件为:n(N,N’-二芳基己二酰二肼):n(NBs／吡啶)=1:2,氧化反应时间0．5-1．0 h,收率80%-94%。并用元素分析、IR、1H NMR对合成的中间产物及目标化合物进行了表征。     

Development of a single loop EPR test method and its relation to grain boundary microchemistry for alloy 600

A single loop electrochemical potentiokinetic reactivation test method has been developed for alloy 600 that produces good passivation on all the surfaces, good etching during the reactivation scan and no appreciable pitting. It is able to quantify and discriminate between samples with a wide range of degree of sensitization. The Pa value correlates well with the minimum level of chromium in the depletion regions at the grain boundaries. It has been shown that the width of the attacked regions is much larger than the width of chromium depletion regions and it does not show any direct correlation with either depth or width or with a volume parameter of chromium depletion regions. It has been shown that the chromium carbides are not attacked during the test and that the intragranular regions attacked during the test are the sites of chromium carbides in the grain matrix. A modified Pa parameter is shown to be sensitive down to 7.5 wt% chromium in the depletion regions and indicates that the intragranular carbides have shallower depletion profiles than those at grain boundaries. Comparison of the results of the single loop and the double loop tests showed a good correlation.     

注入氮离子的SiC涂层阻氢性能研究

利用离子束混合－离子注入（Ar^ ）和磁控溅射相结合的实验技术在HR－1不锈钢基体上制备了注入N^ 的SiC涂层，并用表面分析手段对所制备涂层的表面形貌，剖面形貌、相结构，表面成分，表面元素的化学态进行了分析，结果表明：制备的涂层结构致密，表面平整、膜层成分均匀；涂层与基体之间形成了一明显的过渡层，增强了涂层和基体之间的结合力，用二次离子质谱（SIMS）对充氘涂层的阻氢性能进行了定性分析，结果表明，涂层元素与氢形成稳定的化学键，抑制了氢的扩散和迁移，使得涂层具有一定的阻氢能力。     

Award for distinguished contribution to education and training in psychology: Jill N. Reich.

Presents the citation, biography, and selected bibliography of Jill N. Reich, one of the 1993 recipients of the American Psychological Association's Award for Distinguished Contribution to Education and Training in Psychology. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

驱动AM-OLED的2-a-Si:H TFT的设计与制作

a-Si：H／SiNx：H TFT在长时间栅偏应力作用下，会产生阈值电压漂移，这主要是由绝缘层电荷注入和有源层亚稳态产生而引起的。针对电荷注入现象，文章首先通过控制源气体SiH4和NH3流量的不同，利用PECVD制作了不同N／Si比（0．87～1．68）的氮化硅绝缘材料，对其进行了椭偏、红外和光电子散射能谱（EDS）测试。制作了不同的MIS结构电容，对其进行老化实验和C-V测试分析，结果表明稍富氮（N／Si比稍大于标准Si3N4的化学计量比1．33）的氮化硅做成的M1S样品在老化前后C-V曲线偏移不是很明显，表明其缺陷态密度相对较小，能够有效减小半导体／绝缘层界面间的电荷注入。设计了驱动OLED的2-a-Si：H TFT像素电路及其阵列版图，优化了电路中的几个关键参数，即T1的W／L=2．5、T2的W／L=25和存储电容Cs=0．8pF。运用7PEP生产工艺，制作了13cm（5．2in）的TFT阵列样品。对TFT进行I-V特性测试，其开态电流为10μA，开关比为10^6；对AMOLED显示屏样品进行了静态驱动下的亮度测试，其最高亮度为341cd／m^2。     

基于L298N芯片对离子渗氮中压强的控制

离子渗氮工艺对炉体内压强的控制要求比较高，本文设计了一种基于L298N芯片驱动直流电动机控制的气体流量控制器，可用于控制反应炉的抽气气体流量，提高了炉体压强控制精度，降低了生产成本。