氨合成塔出口氨含量偏低原因分析及对策

阐述UHDE合成塔运行现状 ,分析氨净值达不到设计值的原因 ,提出相应的解决措施     

The fracture stress of chemical vapour deposited diamond

The factors which control the fracture stress of chemical vapour deposited diamond have been studied using the 3-point bend geometry. Fracture stress values of 300–800 MPa for the growth side and 600–1200 MPa for the nucleation side were recorded for samples of thickness 0.4–2.4 mm. A Weibull modulus of 23 was calculated for the growth surface data, showing that the fracture stress variability was low for a brittle material. A theory based on these results demonstrates that the material behaviour is remarkably simple, depending only on the grain size and the sample thickness, regardless of wide variations in other parameters such as optical transmission and stress state. The paper also contains a possible explanation for this well-defined behaviour based on microstress variations resulting from differences in defect density in different growth sectors within a grain.     

显式BEZIER三角曲面的构造及其在离散数据插值中的应用

本文较系统地讨论了显式Bezier三角曲面的Clough-Tocher分割构造方法，并从工程应用角度提出了一种准C‘连续的Bezier三角曲面。由这种准C‘连续的Bezier三角曲面，通过进一步求解整体C‘连续的Bezier三角曲面在解决3D离散数据的曲面插值中取得了较好的应用效果。     

A3钢的工业大气腐蚀

在辽宁省工业城市进行 A3钢大气暴露试验。两年后测出不同地点腐蚀率。依据所记录的各试验点的气象数据和污染数据,讨论了 A3钢的大气腐蚀规律。     

Obtaining Characteristic 4f–4f Luminescence from Rare Earth Organic Chelates

We report a study of a series of heavy rare earth tris‐8‐hydroxyquinolines (REQ₃s), using UV‐visible absorption spectroscopy, infrared absorption spectroscopy, and photoluminescence (PL) measurements. We show that the heavy REQ₃s are all chemically similar to each other and to aluminium tris‐8‐hydroxyquinoline, at least in terms of the ligand behavior. Characteristic rare earth 4f–4f luminescence is only observed for ErQ₃ and YbQ₃ due to the relatively low energy of the ligand triplet state. We show that a triplet transfer mechanism cannot be responsible for the observed Yb 4f–4f luminescence observed in YbQ₃. Instead, an internal chemiluminescent process is shown to be energetically favorable. The thin film PL spectra of all the heavy REQ₃s are dominated by triplet emission, except for that of ErQ₃, for which transfer to the Er³⁺ ion represents an efficient alternative. The PL spectra of powder samples, which would be expected to consist of approximately equal amounts of both isomers, are dominated by singlet emission. This is in contrast to the results from the thin films, and suggests that the isomer which predominates in the thin films has a much higher intersystem crossing rate than the other isomer.     

三维PDP放电过程数值模拟软件

介绍了三维PDP放电过程模拟软件，该软件可较真实地反映放电单元的实际情况，对放电性能进行优化设计，且具有通用性强、界面友好、使用方便、功能完善等特点。可对不同结构、不同气体成份、不同驱动电压及波形等情况进行计算。     

不用专门相移装置的三维面形测量

提出一种不需要专用相移装置实现相移，主要利用数字图像处理技术实现三维面形测量的方法，研究结果表明，用原干涉图像及1幅以上的移值条纹图主可能实现物体三维面形的测量。     

On connections between 3-d microstructures and their 2-d images

The problem of recovery of three-dimensional microstructural parameters from two-dimensional images is addressed in its inverse form. Three-dimensional inhomogeneous solids with known microstructures are generated virtually and images of their cross-sections are analyzed. Three different types of randomly oriented microcracks and microcracks having preferential orientation with some scatter. Somewhat unexpected result is that, in all the cases considered, three-dimensional defect densities are very close to average values of corresponding two-dimensional parameters.     

基于CAMEL3的短消息应用研究

首先分析了现网基于短消息点对点(SMPP)协议的短消息业务(SMS)方案的不足，在此基础上，阐述了基于CAMEL3的SMS方案，并给出了基于CAMEL3的SMS业务流程，最后提出了基于CAMEL3的SMS方案在应用中可能存在的若干重要问题，以及相应的解决方案。     

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al₂O₃ layers on p-type CZ silicon wafers. Low surface recombination is achieved by means of field induced surface passivation due to a high density of negative charges stored at the interface. In comparison to a diffused back surface field, an external field source allows for higher band bending, that is, a better performance. While this process yields state of the art results, it is not suited for large-scale production. Preliminary results on an industrially viable, alternative process based on a pseudo-binary system containing Al₂O₃ are presented, too. With this process, surface recombination velocities of 500–1000 cm/s have been attained on mc-Si wafers.