用AIR-C2H2原子吸收光谱法测定镉镍电池正极浸渍液中钴含量

本文主要简述与运用AIR-C2H2原子吸收光谱法进行镉镍电池正极浸渍液中钴含量的测定，介绍了钴最佳测定条件及呈良好线性范围的浓度。同时对样品消化处理条件，在测定中样品的干扰因素进行了综合考虑，该方法具有很好的灵敏度，很好的重复性，干扰小，同时具有方法步骤简单，操作容易掌握等特点，对样品钴含量的测定，其相对标准偏差均小于1.0%（n=6），标准加入回收率均在97.0%～102.0%(n=5）范围内，结果表明，运用AIR-C2H2原子吸收光谱法测定镉镍电池正极浸渍液中钴含量的分析，达到了实验室分析质量控制的要求，完全适用于镉镍电池正极浸渍液中钴含量的控制分析和样品系统分析。     

主动阻尼控制中的扩展加速度输出反馈法

正位置反馈(PPF)是一种能够显著提高结构模态阻尼的控制策略，但是这种策略在原理和应用中具有一定的局限性。本文在指出了传统的PPF控制器的优缺点基础上，提出一种扩展的加速度输出反馈控制方法AOEF，同时给出了最优AOEF控制器的设计计算方法。仿真计算和实验表明，在传感器／作动器同相的情况下，采用这种控制器的闭环系统具有无条件的稳定性，在非同相的情况下也能达到优良的控制性能。     

IP电话的实现及其关键技术

IP电话在推出后短短十年的时间以其低价、高效、灵活的特点迅速发展起来。本文介绍了IP电话的基本结构，比较了IP电话与普通电话的优缺点，讨论了IP电话的相关协议及关键技术，在这些基础上进一步指出IP电话的发展趋势，相信IP将成为未来信息通信的主导技术。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Organizational Behavior Research in Transition Time of China

The article is to introduce author's research results in recent years in the field of leadership behavior. The main researches conducted in this field include competency model of senior executives in communication industry and family firms; transformational leadership and its relationship with leadership effectiveness, the impact of supervisor's feedback on employees' behavior and the cross-culture study of supervisor's feedback. Theoretical and practical contributions of these researches are explained. Directions for future research are discussed.     

湿H2S环境中金属材料腐蚀的研究

介绍了在湿H2S环境中金属材料的腐蚀试验标准、方法和手段并重点强调了在H2S试验过程中常遇到的一些问题的处理方法.最后,指出了应加强H2S腐蚀的基础性和系统性研究的研究方向.     

分压式电阻测量的闭环负反馈方法

提出一种反馈分压式电阻测量方法，给出了两种改进方案，分析了它们的测量误差，指出了减小误差的途径和方法。     

单输入中立型时滞系统的镇定

本文考虑了单输人中立型时滞系统的镇定问题。利用Byrnes等人提出的中立型时滞系统的模型,我们证明:如果系统是非奇异的,则系统可镇定的充要条件是其谱可镇定。     

氨合成塔出口氨含量偏低原因分析及对策

阐述UHDE合成塔运行现状 ,分析氨净值达不到设计值的原因 ,提出相应的解决措施     

微波等离子体化学气相沉积的 a-Si∶H 性能研究

本文着重对微波等离子体化学气相沉积法高速沉积的 a-Si∶H 膜的物理性能进行评价研究.测量了沉积膜的光电性能、暗电导激活能、光禁带宽度、光吸收特性、沉积膜中悬键态密度以及氢含量等,并讨论沉积条件对膜性能的影响.结果表明,在沉积速率高达30～90(?)/s 情况下,膜的光电导(光照强度10~5Lux)与暗电导比值可达10~3～10~5,暗电导率从10~(-3)到10~(-11)((?)cm)~(-1),其激活能在0.23～0.88eV 之间(0～200℃温度范围内),光禁带宽度为1.40～2.20eV,氢含量约为2～20%.