^17O系统的R矩阵分析

采用多道多能级R矩阵理论,全面系统地分析~(17)O系统中10.5 MeV激发能以下有关~(16)O(n,n)~(16)O·~(16)O(n,a)~(13)C和~(13)C(a,a)~(13)C的全部实验数据。有关~(16)O的中子反应截面计算值被收入中国评价数据库CENDL-2和美国的评价数据库ENDF/B-6。对在R矩阵分析中如何确定本底、道半径和边界条件等问题予以讨论。     

Modified Imidazoles: Degradation Inhibitors and Adhesion Promoters for Polyimide Films on Copper Substrates

Polyimide films on copper substrates that are exposed to elevated temperatures and an oxidizing environment will be subject to degradation. In order to halt this degradation without changing the properties of the system, a polymeric agent could be placed between the polyimide and the copper. This paper will investigate three such materials that will not only slow down the degradation of the polyimide and the oxidation of the copper, but will also improve adhesion within the system. Fourier transform infrared reflection-absorption spectroscopy (FTIR-RAS) will be used to investigate the polyimide/polymeric agent/copper system.     

In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult and time-consuming to obtain after growth.     

CCD应用中的高速图象数据采集技术

介绍了一种可用于精密光学测量的高速线阵ＣＣＤ图象数据采集系统，给出了系统组成、各单元设计考虑和主要技术指标。     

多传感器检测中的数据溶合技术

多传感器检测是使用多种(或多个)传感器对同一被测对象进行广泛的测量。应用多传感器检测技术和多传感器数据溶合技术对车削加工中的零件外圆尺寸检测进行了实验研究,结果表明,多传感器检测技术能够满足现代检测技术对信息的精确要求,使得检测监控系统更加准确、可靠。     

多丝正比室中电子的最大漂移时间

多丝正比室中电子的最大漂移时间是逃逸门电路中的一个重要参数。这个参数的选择将影响逃逸门工作方式的多丝正比室的整体性能。通过实验测量得到了多丝正比室中电子的最大漂移时间的实际值和最大漂移时间随多丝正比室工作状态的变化，测量结果在实际中得到应用。     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

1，2─双（二乙基膦基）乙烷的合成

以二乙基氯化膦为原料，经乙炔化及加氢两步合成了１，２－双（二乙基膦基）乙烷，产率超过文献值。用红外光谱和核磁共振波谱分别测定了结构。