高品质BiOCl珠光颜料的制备及其在水性珠光印花涂料中的应用

为解决合成高固含量氯氧化铋(BiOCl)晶体时易产生晶体碎片和团聚的问题，以聚乙二醇单甲醚-b-聚甲基丙烯酸N,N-二甲基氨基乙酯为分散剂，制备了高固含量(10%)、分散性优异的正方形Bi OCl晶体。以其为珠光颜料，自制的水性聚氨酯(WPU)乳液作黏合剂，制得了具有不同层次珠光效果的织物珠光印花涂层。用光学显微镜、激光粒度仪和XRD考察了BiOCl晶体的形貌、粒径分布和结晶度，并考察了珠光印花涂层的透气性、透湿性、水接触角及色牢度。结果表明，Bi OCl晶体的尺寸可控、无碎片和团聚、结晶度较高；珠光印花涂层透湿率>5500 g/(m²·d)，透气率在15～24 mm/s之间，水接触角>130°，耐洗和耐摩擦色牢度达到4级及以上。     

原纸表面施胶对涂布涂层覆盖率和印刷墨斑的影响

探讨了高速夹网纸机表面施胶对原纸平滑度、透气度以及抗拒流体瞬间渗透性能(PDA)的影响;通过机外高速涂布机对原纸进行相同的涂布工艺,比较了不同表面施胶剂组成与涂层覆盖率和印刷墨斑的差异。与100%氧化淀粉表面施胶相比,配加一定量的合成表面施胶剂,能降低原纸的平滑度和透气度,提高PDA。PDA小,平滑度高,透气度高,能提高涂层覆盖率;涂层覆盖率主要取决于涂层表面结构,覆盖率高不能反映出印刷墨斑的程度低。PDA和原纸透气度是控制印刷墨斑的关键参数,PDA大,原纸透气度低,能降低印刷墨斑的程度,添加合成表面施胶剂有利于改善涂布纸的印刷适性。     

Nonpolar Solvent Modulated Inkjet Printing of Nanoparticle Self-Assembly Morphologies

Patterning of luminescent nanomaterials is critical in the fields of display and information encryption, and inkjet printing technology have shown remarkable significance with the advantage of fast, large-scalable and integrative. However, inkjet printing nanoparticle deposits with high-resolution and well controlled morphology from nonpolar solvent droplets is still challenging. Herein, a facile approach of nonpolar solvent modulated inkjet printing of nanoparticles self-assembly patterns driven by the shrinkage of the droplet and inner solutal convection is proposed. Through regulating the solvent composition and nanoparticle concentration, multicolor light-emissive upconversion nanoparticle self-assembly microarrays with tunable morphologies are achieved, showing the integration of designable microscale morphologies and photoluminescences for multimodal anti-counterfeit. Furthermore, inkjet printing of nanoparticles self-assembled continuous lines with adjustable morphologies by controlling the coalescence and drying of the ink droplets is achieved. The high resolution of inkjet printing microarrays and continuous lines’ width < 5 and 10 µm is realized, respectively. This nonpolar solvent-modulated inkjet printing of nanoparticle deposits approach facilitates the patterning and integration of different nanomaterials, and is expected to provide a versatile platform for fabricating advanced devices applied in photonics integration, micro-LED, and near-field display.     

地质柱状岩性数据统计分析及简易柱状图的计算机打印

本文介绍了地质柱状(钻孔或露头剖面)的岩性数据库的建立及岩性数据的统计分析方法,并介绍了应用C语言实现简易柱状图的计算机打印的技术,为定量地质图件的计算机成图打下基础.     

Optimizing annealing steps for crystalline silicon solar cells with screen printed front side metallization and an oxide‐passivated rear surface with local contacts

Silicon solar cells that feature screen printed front contacts and a passivated rear surface with local contacts allow higher efficiencies compared to present industrial solar cells that exhibit a full area rear side metallization. If thermal oxidation is used for the rear surface passivation, the final annealing step in the processing sequence is crucial. On the one hand, this post‐metallization annealing (PMA) step is required for decreasing the surface recombination velocity (SRV) at the aluminum‐coated oxide‐passivated rear surface. On the other hand, PMA can negatively affect the screen printed front side metallization leading to a lower fill factor. This work separately analyzes the impact of PMA on both, the screen printed front metallization and the oxide‐passivated rear surface. Measuring dark and illuminated IV‐curves of standard industrial aluminum back surface field (Al‐BSF) silicon solar cells reveals the impact of PMA on the front metallization, while measuring the effective minority carrier lifetime of symmetric lifetime samples provides information about the rear side SRV. One‐dimensional simulations are used for predicting the cell performance according to the contributions from both, the front metallization and the rear oxide‐passivation for different PMA temperatures and durations. The simulation also includes recombination at the local rear contacts. An optimized PMA process is presented according to the simulations and is experimentally verified. The optimized process is applied to silicon solar cells with a screen printed front side metallization and an oxide‐passivated rear surface. Efficiencies up to 18.1% are achieved on 148.8 cm² Czochralski (Cz) silicon wafers. Copyright © 2009 John Wiley & Sons, Ltd.