神经网络动力学光度法同时测定烟草中铈和镧

在酸性介质中Ce4＋和La3＋同时阻抑溴酸钾氧化甲基红褪色反应,研究发现：两者对溴酸钾氧化甲基红褪色反应阻抑作用不具有加和性,根据这一现象,用人工神经网络处理非线性体系的优势进行数据处理,从而建立了一种同时测定Ce4＋和La3＋混合物的人工神经网络阻抑动力学光度法。对3种烟草样品进行测定,回收率位于95.0%~104.0%之间,RSD均小于4%,结果良好。     

稀土Eu-2,5-二羟基对苯二甲酸三维配合物的合成、结构与表征

以2,5-二羟基对苯二甲酸为配体,Eu(Ⅲ)为中心离子,甲醇和水为溶剂,采用溶剂热法合成一双核Eu(Ⅲ)配位聚合物{[Eu_2(H_2-DHBDC)_2(C_2O_4)_2(H_2O)_3](H_2O)}_n(H_2-DHBDC=2,5-二羟基对苯二甲酸).利用X-射线单晶衍射(SCXRD)、红外光谱(FTIR)、元素分析(EA)、热重(TG)分析等对其晶体结构和热稳定性进行表征.该晶体属三斜晶系,P-1空间群.其X射线单晶衍射结果表明,2个Eu(Ⅲ)离子处于不同的配位环境中,Eu(1)离子处于9配位的三帽三棱柱配位构型,而Eu(2)则处于8配位的双帽三棱柱配位构型,其双核单元通过配位模式不同的H2-DHBDC2-配体连接形成3D结构.     

基于NSGA-Ⅲ算法的低比转速离心泵多目标优化设计

为提高IJ125-100-400-00型低比转速离心泵的水力性能,采用基于参考点的非支配排序遗传算法（NSGA-Ⅲ）结合近似模型、数值模拟等方法对叶片进行了多目标优化。根据水力损失模型和灵敏度分析结果,选取叶轮出口宽度、叶轮出口直径以及叶轮出口角度3个参数作为设计变量; 使用拉丁超立方抽样随机生成了60组设计方案,针对非简化模型进行了数值模拟,得到了对应的外特性值,并建立了高效的BP神经网络近似模型;最终采用NSGA-Ⅲ算法对近似模型进行了多目标寻优,得到了最优设计变量组合。研究结果表明：初始模型的数值模拟结果与实验值具有很好的一致性,两者在额定工况下扬程的绝对误差小于2.14%,;BP神经网络拟合预测效果良好;优化后的离心泵水力效率提高了6.86%,扬程满足设计需求,泵内部流场明显改善。     

μC/OS-Ⅲ在STM32F103RC 上的移植

针对在 STM32F103RC 处理器组建的系统上移植μC/OS-Ⅲ时需要一定移植条件的问题,介绍一种移植μC/OS-Ⅲ的方法,Cortex-M3内核处理器为μC/OS-Ⅲ移植带来的便利性以及μC/OS-Ⅲ移植工作中涉及到的3方面内容,重点说明μC/CPU移植文件编写与修改的细节,并详述基于STM32F103RC产品平台下的μC/OS-Ⅲ成功移植案例。实践结果表明：该方法具有可操作性,能够实现μC/OS-Ⅲ在STM32F103RC上的移植。     

低缺陷密度和平整表面的硅基砷化镓外延

Device-quality GaAs thin films have been grown on miscut Ge-on-Si substrates by metal-organic chemical vapor deposition. A method of two-step epitaxy of GaAs is performed to achieve a high-quality top-layer. The initial thin buffer layer at 360 ℃ is critical for the suppression of anti-phase boundaries and threading dislocations. The etch pit density ofGaAs epilayers by KOH etching could reach 2.25 × 10^5 cm^-2 and high-quality GaAs top epilayers are observed by transmission electron microscopy. The band-to-band photoluminescence property of GaAs epilayers on different substrates is also investigated and negative band shifts of several to tens of meVs are found because of tensile strains in the GaAs epilayers. To achieve a smooth surface, a polishing process is performed, followed by a second epitaxy of GaAs. The root-mean-square roughness of the GaAs surface could be less than 1 nm, which is comparable with that of homo-epitaxial GaAs. These low-defect and smooth GaAs epilayers on Si are desirable for GaAs-based devices on silicon substrates.     

TA2钛合金表面激光熔覆Ni基Tribaloy 700涂层

为提高钛合金表面强度,采用预置Tribaloy700(T700)合金粉末的方法在TA2钛合金表面进行了激光熔覆制备Ni基T700涂层的研究。研究结果表明,通过激光熔覆能够获得良好的T700合金涂层;涂层中Ti的适量存在能够促进laves相的析出与长大,Ti稀释较小时涂层组织主要为胞状和胞-枝蔓状的奥氏体γNi相,而Ti稀释较大时涂层组织为基体(TiNi γNi相) Laves相;涂层与基材之间有一厚约80~100μm的过渡区。显微硬度测试结果表明,在固溶强化及细晶强化等作用下T700熔覆涂层的显微硬度较常规方法有明显提高,适量的Ti稀释能够进一步提高涂层的硬度。根据Ti稀释程度的不同,涂层的平均硬度值在700~1000HV之间,约比TA2钛合金基材高4~5倍。     

厦门市700 MHz频谱使用现状及干扰隐患

5G系统是我国实施“两个强国”战略的重要信息基础设施,更是发展新一代信息通信技术的高地。700 MHz作为最新规划的5G低频段频谱资源,将进一步提升5G通信技术的发展。重点介绍了厦门市700 MHz频谱的使用现状,存在的干扰隐患及解决建议。     

MODBUS通讯技术在ECS-700 DCS系统中的应用

文章以浙江中控公司ECS-700 DCS控制系统与西门子S7-200 PLC控制系统为例,详述了MODBUS在ECS-700DCS控制系统和S7-200 PLC系统的组态设置,以及怎样使用第三方软件调试MODBUS通讯是否正常。     

Optical and magnetic properties of GaN epilayers implanted with ytterbium

We have studied the optical and magnetic properties of ytterbium implanted GaN epilayer grown on(0001)sapphire by metalorganic chemical vapor by deposition(MOCVD).Samples were implanted at room temperature with Yb ions at dose 4x1015 cm-2 and energy of 150 keV.The implanted samples were annealed at 1000 ℃ in N2 at atmospheric pressure to recover implantation damages.The photoluminescence (PL),PL excitation(PLE),and PL kinetics have been studied with continuous and pulse photo-excitations in 360-1100 nm spectral range at different temperatures.The characteristic Yb3+ion emission spectra were observed in the spectral range between 970-1050 nm.Theoretical fittings of the experimental PL temperature and PL kinetics data suggest that Yb3+ions are involved in at least two major luminescence centers.The PLE spectra indicate that excitation of the Yb3+ion occurs via electron-hole pair generation and complex processes.Magnetization versus magnetic field curves shows an enhancement of magnetic order for Yb-implanted samples in 5 K to 300 K temperature range.The Yb-implanted GaN sample showing weak ferromagnetic behavior was compared with the ferromagnetic in situ doped GaYbN material.     

Electroanalytical tools to investigate the divalent state of Eu（III） and Nd（III） ions in non-aqueous medium

The divalent state of Ln(Ⅲ) ions has attracted much interest because of their ability to serve isomorphously in many biological sys-tem of divalent Ca(II) ion. Therefore, present paper deals with the study of divalent state of Eu(Ⅲ) and Nd(Ⅲ) ions in non-aqueous medium. In present study, cyclic voltammetry and chronopotentiometry were utilized to establish the divalent state of Eu(Ⅲ) and Nd(Ⅲ) ions. The cy-clic voltammetric technique showed two-step reduction process at cathode for both Ln(Ⅲ) ions under specified experimental conditions and chronopotentiometric method also showed two different transition times (). Looking to the shape of cyclic voltammogram we calculated het-erogeneous forward rate constant (K0fh, cm/s) and diffusion coefficient (D, cm2/s) for both ions, which suggested that sweep rate had great ef-fect on the shape of cyclic voltammogram of Eu(Ⅲ) and Nd(Ⅲ) ions. The result of chronopotentiometry also suggested that stable divalent states of Eu(Ⅲ) and Nd(III) ions existed with chronopotentiogram with two distinct transition times. The diffusion coefficients (D, cm2/s) were calculated from Sand equation. The diffusion coefficients of both techniques were compared and the results suggested that the system at electrode surface was changing from being reversible to irreversible.