Low-temperature processing of antimony-implanted silicon

It is shown for the first time that antimony-implanted silicon produces the highest electrical activation (90%) with low resistivity (<200 ohms/square) following low-temperature processing. Thus, annealing at 650°C produces the best results for antimony, whereas for arsenic, it is necessary to anneal at temperatures above 1000°C to get optimum results. Silicon was implanted with antimony at 12 keV and 40 keV and doses of 8.5×10¹⁴ cm⁻² and 4×10¹⁴ cm⁻², respectively, and arsenic at equivalent energies and doses. The electrical data from both implants are compared in order to identify the process conditions require to obtain optimum results. It is demonstrated that annealing below 800°C produces electrical profiles with no measurable diffusion of the antimony, but higher temperature anneals produce significant diffusional broadening.     

分子筛脱水装置在轻烃回收系统中的应用

安塞油田轻烃回收系统利用原料伴生气采用高压低温、加压分馏的工艺回收液化气和轻烃。针对原料气及混合液烃中含水较高,冬季易产生冻堵的难题,重点介绍了分子筛的结构、特点、吸附工作原理和方法,脱水装置理论参数计算、工艺选择,以及在安塞油田轻烃回收系统现场使用情况,并对其使用前后的效果进行对比分析。分子筛脱水效果显著,解决了因原料气含水冻堵装置的问题,并且提高了产品产量和质量。     

结温对LED的影响及温控技术的研究

不断地提高LED的输入功率与发光效率是实现通用照明的必由之路。大量实践表明,LED不能加大输入功率的基本原因,是由于LED在工作过程中会放出大量的热,使管芯结温迅速上升,输入功率越高,发热效应越大。温度的升高将导致器件性能的变化与衰减,甚至失效。文章就功率器件中的升温效应对性能的影响及如何减小这种升温效应的途径作一些简明的讨论。     

IC卡E^2PROM单元写／擦特性的测试与研究

针对金卡工程中EEPROM单元的可靠性问题，本文给出了可以对其编程窗口进行测试和分析的测试系统的软、硬件描述。根据对测试结果的分析与讨论，得到了最佳的单元尺寸和编程条件。     

激光相干态与V—型量子拍频三能级原子的作用研究

本文研究了激发相干态与V-型量子拍频三能原子作用时的动力学行为,并对光子反聚束效应和系统光场的压缩特性进行了细致的讨论。     

A/D转换器参考电压的软件校正

为了消除参考电压波动对A/D转换结果的影响,研究了参考电压波动和温度效应对A/D转换器转换精度的影响机理及其校正方法。利用实验数据得到了参考电压变化和温度效应与转换精度的关系,结合误差理论,分析得出了基于复合校正系数的软件校正算法。实践证明:该算法补偿效果良好,可保证A/D转换的精度。     

一种新型金属探测器的设计

本文简述了金属探测器的原理,在此基础上,着重介绍了一种采用数字合成技术产生信号和变压器耦合功率放大电路的金属探测器的设计方法。采用平衡式线圈结构,利用FPGA直接频率合成的方式设计信号源,直接进行频率合成,功率放大方面采用了变压器耦合功率放大电路。文中给出了系统的硬件组成和设计方法,最后通过实验验证了该计算方法的有效性。具有灵敏度高,稳定性好,能够得到稳定的控制效果的特点。可用于食品加工、制药等行业,大大提高了生产率并显著改善了产品的质量。     

Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In

Thermoelectric effect spectroscopy and photoluminescence techniques were used to study the defect levels in samples from three crystals of CdTe:In grown by the vertical gradient freeze method. The main goal of the investigation was to study defects, which strongly trap charge carriers or act as recombination centers in order to eliminate them from the technological process. The main difference among detecting and non-detecting samples was the absence of electron traps with a very high capture cross-section and energy 0.6 eV to 0.7 eV, which act as lifetime killers even at low concentrations. Recently published ab initio calculations show a complex of Te antisite and Cd vacancy within this energy range.     

CMOS Microsystem Front-End for MicroTesla Resolution Magnetic Field Measurement

In this paper we discuss the conception and performances of a monolithic microsystem for magnetic field measurement built in standard 0.6 m CMOS technology. It is shown that 5.2 microTesla resolution over 1 kHz bandwidth (5 Hz to 1 kHz) can be achieved by combining a particular Hall effect based sensing device and appropriate analog conditioning electronics. The study focuses on the methods used to drive up the sensor's sensitivity and to drive down the system's noise level in order to achieve the above-mentioned resolution. A specific circuitry is proposed for biasing the sensor.