Photoreflectance Studies of SIMOX Materials

Photoreflectance (PR) was used to study SIMOX materials produced under various fabrication conditions. The position, amplitude and shape of the 3.4 eV PR response were monitored for three different sets of samples which provided information about the crystalline quality of the top silicon layer. Each sample of the first set underwent different annealing conditions. A second set of six samples was arranged such that one sample was removed at a different step of the process involving three implantation-anneal cycles. A third set of four samples was implanted with different doses of oxygen. In the first case the PR signal improved with longer annealing times and higher temperatures; in the second case the PR signal appeared to deteriorate with each cycle undergone by the samples, while in the third case the degradation of the structure increased with the increased implantation dosage. Transmission electron microscopy (TEM) was also performed in the last two cases, and its results supported the PR conclusions.     

日趋成熟的SOI技术

SOI技术作为 2 1世纪的硅集成技术正在日益受到人们的青睐。从SOI技术的发展过程、制备工艺、开发应用及市场预测几个方面评述了SOI技术现状及前景。     

Overview of SOI materials technology in China

In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI （SGOI） material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX technology. From 2002, the 100 mm, 125 mm and 150 mm SIMOX wafers have been successfully produced by Shanghai Simgui Technology Co. Ltd, a commercial spin-off of Shanghai Institute of Microsystem and Information Technology （SIMIT）, Chinese Academy of Sciences （CAS）, and shipped to the semiconductor industry worldwide. This paper presents an outlook for R ＆ D on SOI technologies, and the recent status and future prospect of SIMOX wafers in China.     

从离子注入到离子束合成——离子束领域的重大进展

本文了离子束科学技术新领域新的重大进展－从作为半导体掺杂手段剂量离子注入到高剂量离子注入以合成新材料。文中讨论了高剂量注入的物理效应，利用高剂量氧注入硅合成ＳＩＭＯＸ材料的物理过程以及离子束合成的多种应用。     

SOI技术的新进展

通过对最近两次SOI国际会议的分析,综述了SOI技术取得的新进展。三种SOI技术SIMOX,Smart-cut和BESOI已走向商业化,在高温与辐射环境下工作的SOI电路也走向了市场。近来人们更加重视SOI技术,是因为SOI在实现低压、低功耗电路上的突出优越性。     

超薄SIMOX材料的Pseudo-MOSFET电学表征

介绍了一种表征SOI材料电学性质的手段,并对三种不同顶层硅厚度的SIMOX材料进行测试、提取参数,分析材料制备工艺对性能产生的影响。研究结果表明,标准SIMOX材料通过顶层硅膜氧化、腐蚀等减薄工艺制得的顶层硅厚度小于100nm的超薄SIMOX材料,其顶层硅与BOX层界面有更多的缺陷,会影响到在顶层硅膜上制得的器件的性能,引起NMOSFET的阈值电压升高、载流子迁移率降低。Pseudo-MOSFET方法能够在晶圆水平上快捷有效地表征超薄SIMOX材料的电学性质。     

Investigation of SiGe-on-Insulator Novel Structure

SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si.     

SIMOX Research,development, and manufacturing

Ibis Technology Corporation, 32A Cherry Hill Dr., Danvers, MA 01923 Research and development on SIMOX silicon-on-insulator material is rapidly increasing due to exciting applications for low power, low voltage, and advanced, high performance circuitry. Consistency in wafer uniformity and interface smoothness, reduction of metallic contamination, and a drive toward lower substrate cost have all contributed to the use of SIMOX as a starting substrate for production devices and circuits. Considerations for new implanter development, product material improvement, and worldwide market expansion are discussed.     

Transient radiation effects in CMOS inverters fabricated on SIMOX and BESOI wafers

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Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate

A new lateral insulated-gate bipolar transistor (LIGBT) with a SiO2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT; the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies.