Conductivity modulation enhanced lateral IGBT with SiO2 shielded layer anode by SIMOX technology on SOI substrate

New Lateral IGBT with SiO2 shielded layer anode on SOI substrate is proposed and discussed. Compared to the conventional LIGBT, the proposed device offers a conductivity modulation enhanced effect due to the SiO2 shielded layer anode structure which can be formed by SIMOX technology. Simulation results show that, for the proposed LIGBT, during conducting state, the electron-hole plasma concentrations in n-drift region are several times larger than that of conventional LIGBT; the conducting current is up to 37% larger than that of conventional one. The SiO2 shielded layer anode conductivity modulation enhanced effect do not sacrifice other characteristics of device, such as breakdown and switching, but is compatible to other optimized technologies.     

低剂量 SIMOX圆片线缺陷和针孔的研究

用Secco法、Cu-plating法分别表征了低剂量SIMOX圆片顶层硅线缺陷、埋层的针孔密度。结果显示,低剂量SIMOX圆片的顶层硅缺陷密度低,但埋层质量稍差。通过注入工艺和退火过程的进一步优化,低剂量SIMOX将是一种有前途的SOI材料制备工艺。     

Fabrication and temperature coefficient compensation technology of low cost high temperature pressure sensor

For the purposes of pressure measurement at high temperature in oil drilling industry as well as in other industrial measurement and control systems, the strain gauge chip of piezoresistive pressure sensor is designed based on separation by implanted oxygen (SIMOX) SOI (silicon on insulator) technology, and then fabricated in the micro-machining work bay. Some kinds of sensor mechanical structures are designed for different customers and conditions. The thermal coefficients of expansion (TCE) mismatches between different materials within the high-pressure sensor system are investigated. The sensor is fabricated successfully by using high temperature packaging process. The temperature coefficient of sensitivity (TCS) and temperature coefficient of offset (TCO) compensation circuitry is demonstrated. Based on experimental data, the sensor is tested with high accuracy and good stability.     

SOI技术的发展及其在航天技术领域的应用

本文简要地综述了多种技术途径制备ＳＯＩ材料的发展现状，并着重讨论了ＳＭＯＸ／ＳＯＩ的潜在优点、发展趋势及其在宇航微电子技术发展中的应用前景．     

薄膜厚埋层SOI材料的新制备技术

在结合低剂量注氧隔离(SIMOX)技术和键合技术的基础上,研究了制备薄膜(薄顶层硅膜)厚埋层SOI材料的新技术--注氧键合技术.采用该新技术成功制备出薄膜厚埋层SOI材料,顶层硅厚度130nm,埋氧层厚度lμm,顶层硅厚度均匀性±2%.并分别采用原子力显微镜(AFM)和剖面透射电镜(XTEM)对其表面形貌和结构进行了表征.研究结果表明,SIMOX材料顶层硅通过键合技术转移后仍能够保持其厚度均匀性,且埋氧层和顶层硅之间具有原子级陡峭的分界面,因此注氧键合技术将会是一项有广阔应用前景的SOI制备技术.     

SIMOX薄膜上形成钛硅化物的研究

本文报道了在SIMOX(Separation by IMPlanted Oxygen)薄膜材料上制备钛硅化物的研究结果。研究表明,不同厚度的SIMOX薄膜材料上都形成了均匀的TiSi_2,其薄层电阻为4.0—4.5Ω/□,上层Si中的载流子峰值浓度达2×10~(20)/cm~3,获得了一种TiSi_2/n~+-Si/SiO_2/Si的多层结构。形成TiSi_2后,As原子在上层Si中的分布与SIMOX薄膜厚度有关,当上层Si很薄时,As原子在上层Si与SiO_2埋层的界面上的堆积是明显的。     

SIMOX材料顶层硅膜中残余氧的行为

利用光致发光谱 (PL)和二次离子质谱 (SIMS)检测了不同退火条件下处理的 SIMOX材料的顶层硅膜 .实验结果显示 ,SIMOX顶层硅膜的 PL 谱有三个峰 :它们是能量为 1.10 e V的 a峰、能量为 0 .77e V的 b峰和能量为0 .75 e V的 c峰 .与 RBS谱相比 ,发现 a峰峰高及 b/ a峰值比是衡量顶层硅膜单晶完整性的标度 .谱峰 b起源于SIMOX材料顶层硅膜中残余氧 ,起施主作用 .SIMS测试结果显示 ,谱峰 c来源于 SIMOX材料顶层硅膜中的碳和氮 .     

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

为了提高SIMOX(separation-by-implanted-oxygen)SOI(silicon-on-insulator)结构中埋氧层(BOX)的总剂量辐射硬度,埋氧层中分别注入了2×1015和3×1015cm-2剂量的氮.实验结果表明,在使用Co-60源对埋氧层进行较低总剂量的辐照时,埋氧层的总剂量辐射硬度对注氮剂量是非常敏感的.尽管埋氧层中注氮剂量的差别很小,但经5×104 rad(Si)剂量的辐照后,注入2×1015cm-2剂量氮的埋氧层表现出了比未注氮埋氧层高得多的辐射硬度,而注入3×1015cm-2剂量氮的埋氧层的辐射硬度却比未注氮埋氧层的辐射硬度还低.然而,随辐照剂量的增加(从5×104到5×105rad(Si)),这种埋氧层的总剂量辐射硬度对注氮剂量的敏感性降低了.采用去掉SOI顶硅层的MOS高频C-V技术来表征埋氧层的总剂量辐射硬度.另外,观察到了MSOS(metal-silicon-BOX-silicon)结构的异常高频C-V曲线,并对其进行了解释.     

SOI MOSFET器件X射线总剂量效应研究

研究了以10keV X射线为辐照源对注氧隔离(SIMOX)SOI MOSFET器件进行辐照的总剂量效应.采用ARACOR 10keV X射线对埋氧层加固样品与未加固的对比样品在开态和传输门态两种辐照偏置下进行辐照,分析了器件的特性曲线,并计算了SOI MOS器件前栅与寄生背栅晶体管辐照前后的阈值电压的漂移.实验结果表明,加固样品的抗辐射性能优越,且不同的辐照偏置对SOI MOSFET器件的辐照效应产生不同的影响.     

Formation of thermal donors in SIMOX material

Thermal oxygen donor generation in SIMOX material formed in Czochralski (CZ) and oxygen free float zone (FZ) silicon was investigated by Hall and photoluminescence techniques. It was determined that residual interstitial oxygen was introduced to silicon by the SIMOX buried oxide formation process thus increasing the possibility of thermal donor creation. Significantly, thermal donor generation was identified and localized to the top silicon region in FZ material. The detected concentration of residual oxygen was on the order of 5 × 10¹³ cm^-3 and is negligible when compared to the intrinsic oxygen concentration of the starting CZ bulk material.