余热利用系统多目标优化模型及应用

以炭黑生产中的余热利用系统为背景建立了余热利用系统多目标优化规划数学模型;阐述了模型的求解方法;给出了实例分析。     

生物降解型聚碳酸顺丁烯二酸亚乙酯 1、合成和表征

用CO_2、环氧乙烷、顺丁烯二酸酐进行三元共聚首次得到聚碳酸顺丁烯二酸亚乙酯(PECM),并用IR、~1H NMR、DSC等进行了表征,共聚物链中CO_2和MA单元随机分布,不饱和单元可在0～0.5mol分数之间调节。共聚过程不发生双键交联和构型转化。环氧乙烷的转化率可高达到93％。控制PECM链上的双键含量并使之发生自由基加成反应,得到对热较稳定的可溶性产物。     

含淀粉聚乙烯膜的时控光降解研究

使用复合光降解剂，得到了可光降解的生物降解膜。对膜的光降解进行了考察，并对影响光降解的因素进行了讨论，结果表明，我们所制得的膜是一种较好的时控光降解膜。     

Capacitated Clustering Problems by Hybrid Simulated Annealing and Tabu Search

The capacitated clustering problem (CCP) is the problem in which a given set of weighted objects is to be partitioned into clusters so that the total weight of objects in each cluster is less than a given value (cluster ‘capacity’). The objective is to minimize the total scatter of objects from the ‘centre’ of the cluster to which they have been allocated. A simple constructive heuristic, a R-interchange generation mechanism, a hybrid simulated annealing (SA) and tabu search (TS) algorithm which has computationally desirable features using a new non-monotonic cooling schedule, are developed. A classification of the existing SA cooling schedules is presented. The effects on the final solution quality of the initial solutions, the cooling schedule parameters and the neighbourhood search strategies are investigated. Computational results on randomly generated problems with size ranging from 50 to 100 customers indicate that the hybrid SA/TS algorithm out-performs previous simulated annealing algorithms, a simple tabu search and local descent algorithms.     

二(二甲苯基)丙烷合成工艺的研究

二氯丙烷(DCP)与二甲苯在混合金属氯化物催化剂(HD90)作用下合成二(二甲苯基)丙烷,生产过程简单,产品收率高。在60—80℃的温度下,二甲苯与二氯丙烷摩尔比为6∶1,HD用量50克/摩尔DCP的条件下反应5—6小时,二(二甲苯基)丙烷的收率可达88％以上。     

膨润土凝胶调剖剂XJF的研制及应用

介绍了调剖剂XJF的配方,讨论了影响调剖剂性能的配方因素(膨润土含量、HPAM溶液浓度、XJ用量及添加剂Fc的浓度),考察了封堵能力和应用范围,简介了在火烧山油田现场试验的结果。     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

The growth and characterization of AlGaAs double heterostructures for the evaluation of reactor and source quality

AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exposure of the growth chamber, and possible phosphorus contamination are also studied. Extensive characterization is performed on these films by a variety of methods, including high-resolution x-ray diffraction, photoluminescence (PL), time-resolved photoluminescence, and secondary-ion mass spectrometry. The PL intensities for structures grown with the low-alkoxide grade are reproducibly much greater than those grown with the regular-grade TMA1. The use of AsH₃ purification improves the PL intensity.     

分子结构对增塑聚氯乙烯性能的影响

研究了聚合度、分子量分布和支化结构对增塑聚氯乙烯加工流变性能和物理力学性能的影响。结果表明，增塑ＰＶＣ的加工流变性能随聚合度的增加而恶化；拓宽分子量分布和引入支化结构均有利于加工流变性能的提高；增塑ＰＶＣ的拉伸强度随聚合度的增加而提高，而压缩永久变形却随之减小；分子量分布对物理力学性能的影响不大；支化ＰＶＣ的拉伸强度略有下降。