关于四元数亚正定矩阵之迹的几个不等式

讨论了四元数亚（半）正定矩阵的一些性质，给出了四元数亚（半）正定矩阵的迹的几个不等式．     

BEX二类油层弱碱三元矿场试验效果分析探讨

BEX二类油层弱碱三元复合驱矿场试验是油田首次在二类油层开展石油磺酸盐表面活性剂弱碱体系三元复合驱试验。2005年11月开展空白水驱,2008年10月,在水驱采出程度45.30%、综合含水98.45%的基础上开展三元复合驱,目前处于后续聚合物保护段塞阶段,中心井区已经取得阶段提高采收率24.43%,预计最终提高采收率28.0%。通过该试验进一步研究弱碱三元复合驱的注采状况和措施效果,结果表明:石油磺酸盐表面活性剂弱碱体系三元复合驱在油田北部开发区二类油层提高采收率技术是可行的;弱碱三元复合驱效果明显优于聚合物驱;个性化设计和及时的措施调整保证了试验效果。     

渤海油田弱凝胶与泡沫复合调驱体系优化

采用流变、常规量筒法、扫描电镜及显微镜,研究了优选出的3种弱凝胶与SD发泡剂的复配体系的起泡性能、黏度、稳定性以及微观结构。结果表明,起泡剂与弱凝胶复配之后,体系的各项性能得到明显改善。复配体系半衰期增大,泡沫黏度增大,稳定性增强,明显优于单一体系。在弱凝胶与泡沫复合调驱体系中,凝胶易在气泡表面形成吸附膜,将泡沫包裹在内部,增强了气液界面的黏度,使得泡沫不容易发生聚并破裂,从而增强了泡沫的稳定性以及黏度,使得其半衰期也增大。     

F测度在广义F积分意义下的弱收敛

本文探讨了Ｆ 测度的弱收敛问题， 给出了广义Ｆ 积分意义下的弱收敛定义及一些性质     

水声高频微弱信号的程控测量

叙述了大动态弱信号测量的实现方法，程控放大器由低噪声电流反馈虎放大器构成，扩展了的频带，通过计算机对接收机增益进行智能化控制，既避免了放大器饱和，又使得采样的量化误差最小。由软件控制选择滤波器，这样可以在工的频带获得低噪声的信号。     

螯合树脂D751和弱酸性树脂112×1的碱土、稀土和过渡金属树脂盐的研究

测定了在加有乙酸钠的弱碱性溶液中,碱土、稀土和过渡金属离子在具有亚胺二乙酸功能基的D751和具有羧酸功能基的112×1树脂上吸附达到饱和时,树脂中功能基和金属离子的摩尔数之比,测定了各种纯金属离子式树脂的红外光谱,并由此讨论了上述三种金属离子与两种树脂上功能基的成键性质。     

Event fairness and non-interleaving concurrency

Event fairness suitable for non-interleaving concurrency is proposed. Fairness is viewed with respect to concurrency, rather than non-determinism, in the sense that no concurrent component of the system should be delayed indefinitely. Shields' asynchronous transition systems and Mazurkiewicz's traces have been used; the model gives rise to a partial order. A class of generalised notions of (weak, strong and unconditional) event fairness relative to progress requirements is derived. The weakest fairness notion in this class is shown to coincide with maximality with respect to the partial order over traces.     

Blind separation of fetal electrocardiograms by annealed expectation maximization

This work explores blind source separation of fetal electrocardiograms by annealed expectation maximization (AEM). The AEM method improves the traditional EM method by relaxation under an annealing process, which is recruited to avoid trappings of tremendous spurious local minima within an objective function that inversely measures quantitative performance of a demixing structure. The derived objective function depends on the demixing structure as well as a set of membership vectors that represent missing data toward encoding statistical dependency of retrieved independent sources. Under the annealing process, the derived E and M steps are iteratively performed to search for expectations of membership vectors and minimizers of the objective function. The state number of membership vectors is related to modulate discretization of observations. Its effects on extraction of fetal electrocardiograms and reliability of the AEM method for blind source separation are extensively explored by numerical simulations.     

Test of time reversal invariance with TRINE

The new detector TRINE (time reversal invariance neutron experiment) was developed to test the time reversal invariance in the neutron decay. The precision of former experiments can be improved by one order of magnitude with an improved proton detection, a better background suppression and an angular resolving measurement using multiwire proportional chambers in coincidence with plastic scintillators, and the higher neutron flux and polarization available today. The concept of the detector and the status of the project is discussed.     

High-performance 2,9-DPh-DNTT organic thin-film transistor by weak epitaxy growth method

2,9-DPh-DNTT, an isomeric of diphenyl-dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b] thiophene (DPh-DNTTs), is an emerging candidate of high mobility organic semiconductor material. In this work, a high performance 2,9-DPh-DNTT organic thin-film transistor (OTFT) is fabricated by the method of weak epitaxy growth. The quality of 2,9-DPh-DNTT thin film was significantly improved when its epitaxial layer grows on an inducing layer of para-sexiphenyl (p-6P). Continuous large-area, highly ordered and terraced 2,9-DPh-DNTT polycrystalline thin films are obtained. The hole mobility of as-fabricated 2,9-DPh-DNTT thin-film transistor reaches up to 6.4 cm² V⁻¹s⁻¹. This simple process of preparing high mobility 2,9-DPh-DNTT thin-film transistor supplies a facile route of large-area OTFT fabrication.