电子束退火法制备ZnO薄膜

利用溶胶-凝胶法制备出ZnO的凝胶前驱膜,用电子束退火取代传统炉子退火,对前驱膜进行后处理,退火时固定电子束加速电压为10kV,退火时间为5min,调节聚焦束流和电子束束流,使退火温度在600~900℃范围内变化。扫描电镜(SEM)、X射线衍射(XRD)、原子力显微镜(AFM)和压电力显微镜(PFM)的测试结果表明,运用电子束退火法可制备出晶粒尺寸小于30nm、沿(002)择优取向、具有压电效应的六方ZnO薄膜,且随着退火温度的升高,晶粒尺寸逐渐变大,薄膜的结晶性和取向变好,压电效应越来越明显。     

微波辅助水热法合成的可见光响应型Sm掺杂ZnO微晶的光催化性能和抗菌活性

采用六水合硝酸锌为锌源、六水合硝酸钐为掺杂剂、十二烷基硫酸钠为诱导剂、无水乙醇和水为混合溶剂,利用微波辅助水热法制备了Sm掺杂ZnO微晶。将Sm掺杂到ZnO晶体结构中,不仅改变ZnO的晶体结构,而且Sm掺杂对ZnO的形貌有明显的影响。考察不同Sm掺杂ZnO样品对罗丹明B的降解性能和对白色念珠菌和霉菌的抗菌活性,结果表明,[Sm]/[Zn]物质的量比为1%的Sm掺杂ZnO微晶表现出最好的光催化性能和抗菌活性。在模拟可见光下(500 W氙灯)照射160min后光催化降解罗丹明B的脱色率为75.9%,TOC去除率为66.3%。由菌落计数结果可知,其对白色念珠菌和黄曲霉的抑菌率分别为81%和77%。     

ZnO纳米棒/多孔锌泡沫的制备及其压缩和抗菌性能

以商业铸态纯锌和NaCl颗粒为原料,采用空气压缩渗流法制备得到表观密度为2. 86 g/cm3、孔隙率为60%的多孔锌泡沫。扫描电镜观察发现相互连通的孔洞均匀地分布于多孔锌泡沫内部。将多孔锌泡沫置于200 g/L的NaCl水溶液中,80℃保温2 h后试样表面原位生成密集的ZnO纳米棒,得到ZnO纳米棒/多孔锌泡沫材料。压缩测试结果表明,ZnO纳米棒/多孔锌泡沫的压缩力学性能与未经NaCl水溶液处理的多孔锌泡沫的压缩力学性能相比没有明显下降。抗菌测试结果表明,ZnO纳米棒/多孔锌泡沫材料具有优异的抗菌性能。     

基于ZnO忆阻器的神经突触仿生电子器件

本文采用ZnO忆阻器模拟了生物神经突触的记忆和学习功能。ZnO突触器件表现出典型的随时间指数衰减的突触后兴奋电流(EPSC),以及EPSC的双脉冲增强行为。在此基础上,实现了学习-遗忘-再学习的经验式学习行为,以及四种不同种类的电脉冲时刻依赖可塑性学习规则。ZnO突触器件实现了超低能耗操作,单次突触行为能耗最低为1.6pJ,表明其可以用来构筑未来的人工神经网络硬件系统,最终开发出与人脑结构类似的认知型计算机以及类人机器人。     

Interface engineering of high efficiency perovskite solar cells based on ZnO nanorods using atomic layer deposition

Despite the considerably improved efficiency of inorganic-organic metal hybrid perovskite solar cells (PSCs),electron transport is still a challenging issue.In this paper,we report the use of ZnO nanorods prepared by hydrothermal selfassembly as the electron transport layer in perovskite solar cells.The efficiency of the perovskite solar cells is significantly enhanced by passivating the interfacial defects via atomic layer deposition of A12O3 monolayers on the ZnO nanorods.By employing the A12O3 monolayers,the average power conversion efficiency of methylammonium lead iodide PSCs was increased from 10.33％ to 15.06％,and the highest efficiency obtained was 16.08％.We suggest that the passivation of defects using the atomic layer deposition of monolayers might provide a new pathway for the improvement of all types of PSCs..     

Capping CsPbBr<Subscript>3</Subscript> with ZnO to improve performance and stability of perovskite memristors

The rapid development of information technology has led to an urgent need for devices with fast information storage and processing,a high density,and low energy consumption.Memristors are considered to be next-generation memory devices with all of the aforementioned advantages.Recently,organometallic halide perovskites were reported to be promising active materials for memristors,although they have poor stability and mediocre performance.Herein,we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite (CsPbBr3,CPB).The devices have electric field-induced bipolar resistive switching (ReS) and memory behaviors with a large on/off ratio (＞105),low working voltage (＜1 V) and energy consumption,long data retention (＞104 s),and high environmental stability,which are achieved via ZnO capping within the devices.Such a design can be adapted to various devices.Additionally,the heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 103 with a rapid response speed (＜1 ms),which enables us to tune the resistance state by changing the light and electric field simultaneously.Such multifunctional devices achieved by the combination of information storage and processing abilities have potential applications for future computing that transcends traditional architectures.     

Tribotronic transistor sensor for enhanced hydrogen detection

Hydrogen detection with a high sensitivity is necessary for preventing potential explosions and fire.In this study,a novel ZnO tribotronic transistor is developed by coupling a ZnO field effect transistor (FET) and triboelectric nanogenerator in free-standing mode and is used as a sensor for hydrogen detection at room temperature.Tribotronic modulated performances of the hydrogen sensor are demonstrated by investigating its output characteristics at different sliding distances and hydrogen concentrations.By applying an external mechanical force to the device for sliding electrification,the detection sensitivity of the ZnO tribotronic transistor sensor is improved,with a significant enhancement achieved in output current by 62 times at 500 ppm hydrogen and 1 V bias voltage.This study demonstrates an extension of the applications of emerging tribotronics for gas detection and a prospective approach to improve the performance of the hydrogen sensor via human-interfacing.     

RGO/ZnO纳米棒复合材料的合成及光催化性能

采用水热合成法制备ZnO纳米棒及RGO/ZnO纳米棒复合材料。研究不同含量的RGO对RGO/ZnO纳米棒复合材料光催化活性的影响。采用X射线衍射仪(XRD)、场发射电子显微镜(FESEM)、光电子能谱仪(XPS)及漫反射紫外-可见吸收光谱(UV-Vis)检测手段对RGO/ZnO进行表征。结果显示:RGO与ZnO纳米棒成功复合。加入GO的含量不同,获得的RGO/ZnO样品在可见光区域的吸光度值不同。以甲基橙作为模拟污染物的光催化结果表明,RGO/ZnO复合材料具有高的紫外-可见光光降解效率,加入GO与ZnO的质量比为3%时,样品紫外-可见光光催化性能最佳,120min内甲基橙基本可以完全降解;且在波长大于400nm可见光照射下,RGO/ZnO具有一定的可见光活性,180min内其降解甲基橙效率最大可达26.2%。同时,RGO/ZnO具有较好的光稳定性。     

不同含量改性纳米粉体对球墨铸铁拉伸性能的研究

通过冲入法将改性纳米粉体M加入到球墨铸铁中,研究了不同含量的改性纳米粉体M对球墨铸铁组织和拉伸性能的影响。实验结果表明,加入0.01%(质量分数)改性纳米粉体M后,石墨球的综合性能提升最明显,其尺寸减小且变得均匀,数量增加,圆整度提高,晶粒得到细化,珠光体含量降低,铁素体含量增加,拉伸性能得到提升。抗拉强度提高到493.82 MPa,延伸率提高到19.09%。通过断口分析,确定其拉伸断裂的机理为混合式断裂。     

微流控技术制备ZnO纳米棒及生物荧光检测性能研究

本研究设计并制备了一种微流控芯片并在其中水热合成了氧化锌(ZnO)纳米棒。利用扫描电子显微镜(SEM)和X射线衍射(XRD)研究了合成条件对ZnO纳米棒的形貌和晶体结构的影响。结果表明, 在微流控芯片中可制备得到致密的ZnO纳米棒, 其直径和长度随加热方式和制备时间的变化而改变。对比研究不同加热方式制备的ZnO纳米棒阵列检测异硫氰酸荧光素标记的羊抗牛IgG的性能, 发现局部加热方式制备的ZnO纳米棒检测荧光素标记蛋白的性能更佳, 在10 pg/mL~1 μg/mL范围内线性良好, 相关系数为0.99209。在此基础上, 用局部加热制备的ZnO纳米棒检测人甲胎蛋白(AFP), 其最低检测限可达1 pg/mL。这些结果表明, 微通道中合成的ZnO纳米棒适用于多通道荧光检测。