自适应电子镇流器控制器IR2520原理及应用

IR2520是自适应镇流器控制器与600V半桥驱动器单片IC ,可用来驱动半桥配置中的荧光灯。文中介绍了IR2520的主要特点和基本原理 ,给出了它的典型应用电路。     

基于可重构FPGA技术的自适应FIR滤波器的实现

有限冲激响应(FIR)滤波器设计遇到的难题是滤波要进行大量乘法运算,即使是在全定制的专用集成电路中也会导致过大的面积与功耗.对于用硬件实现系数是常量的专用滤波器,可以通过分解系数变为应用加、减和移位而实现乘法.FIR滤波器的复杂性主要由用于系数乘法的加法器/减法器的数量决定.而对于自适应FIR滤波器,大多数场合下可用数字信号处理器(DSP)或CPU通过软件编程的方法来实现,但是对于要求高速运算的场合,VLSI实现是很好的选择.基于这一考虑,可以用符号数的正则表示(CSD)码表示系数, 再利用可重构现场可编程门阵列(FPGA)技术实现.可重构结构的应用,能保证系统的其余部分同时处于运行状态时实现FIR滤波器系数的更新.文中利用CSD码和可重构思想,提出了用FPGA实现自适应FIR滤波器的一种方案.     

信道粒度可变的分块自适应OFDM传输系统

满足不同服务质量(QoS)业务是Beyond 3G系统必须考虑的一个问题。本文提出一种可变信道粒度的分块自适应OFDM系统。系统能够根据不同用户多样化的速率需求，自适应地改变分块的大小，并且在每个分块上进行自适应调制，在满足用户速率要求的基础上降低了对子载波分配信息(SAI)和自适应调制信息(AMI)的需求。仿真结果表明，本文提出的系统在系统容量和频谱效率上比固定分块自适应OFDM系统有更好的性能。     

一种基于TV模型的自适应图像修复方法

图像修复是数字图像处理的重要内容，可用于被损坏的图像和视频修复、视频文字去除以及视频错误隐藏等。基于TV模型的修复方法有较好的恢复效果，但对参数的选取比较敏感，且运算量较大。本文提出了一种基于TV模型的自适应图像修复方法，与原方法相比可以有效提高该算法的稳健性，并能显著的减少运算时间。     

Fixed mesh front‐tracking methodology for finite element simulations

A direct front‐tracking method using an Eulerian–Lagrangian formulation is developed in two space dimensions. The front‐tracking method is general in that it can track any type of interface once its local velocity is specified or has been determined by calculation. The method uses marker points to describe the interface position and tracks the interface evolution on a fixed finite‐element mesh, including growth, contraction, splitting and merging. Interfacial conditions are applied directly at the interface position. The method is applied to three scenarios that involve different interface conditions and are based on energy and mass diffusion. The three calculations are for the dendritic solidification of a pure substance, the cellular growth of an alloy, and the Ostwald ripening of silica particles in silicon. Numerical results show that very complicated interface morphologies and topological changes can be simulated properly and efficiently. Copyright © 2004 John Wiley & Sons, Ltd.     

制造业跟踪系统解决方案剖析

NetLinx技术的发展，使得跟踪系统发生了划时代的飞跃，在制造业上的应用更加广泛。本文以一间显像管厂为例，详细介绍了跟踪系统在制造业上的应用。     

有环境约束时完成一族跟踪任务的力控制

本文为工业机器人提出了一种极点配置控制法，这种控制方法的优点有：一是它的积分作用消除了机器人的微小扰动和稳态误差；二是能任意设置系统的极点，因此能保证闭环系统的稳定性和规定状态变量的暂态响应；三是加入了加速度反馈，抑制了由电枢电感所引起的机械手的振动，最后，给出了ＰＵＭＡ５６２机器人的计算机仿真和实验结果验证了此控制法的有效性。     

Adaptive control of siso plants with unmodelled dynamics

In this paper we pursue a twofold aim. First we want to simplify the complexity of the classical Monopoli's scheme, the so-called ‘Augmented error signal control scheme’. Then we also wish to cope with the realistic situation in which the presence of unmodelled dynamics has to be taken into account. This latter problem has been faced in the literature by suitably modifying the adaptation mechanism in order to avoid undesired phenomena as well as to obtain an attractive stability region for the state trajectories starting from any point in a predefined initial condition set. In our case the necessity of introducing any sort of modification in the adaptation mechanism is completely avoided, but we still obtain asymptotic stability of the output error signal.     

红外目标精跟踪方法的研究

本文提出了一种直接把红外前视传感器的输出作为测量值来跟踪红外目标的扩展型卡尔曼滤波跟踪算法。在滤波处理时,设置可变的测量矩阵,其目的在于提高运算速度和抑制噪声干扰。通过具体的实例,对所提跟踪算法的特点和有效性进行了细致的分析。     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.