汽车电子芯片EMC测试标准研究

在汽车电子产品所采用的电磁兼容测试标准的基础上,以功率驱动芯片为例,提出了汽车电子芯片级电磁兼容测试的必要性,并重点介绍了集成电路电磁发射测试标准IEC61967和集成电路电磁抗扰度测试标准IEC62132。     

探讨电子信息工程的现代化技术

通讯技术和电子技术结合在一起,被人们应用于生活的多个领域,在仪表自动化方面也取得了很大进展。文章分析了电子信息工程的概念及意义,讲解了仪表自动化的现状,探讨了仪表自动化技术的应用。     

汽车电子系列课程研究与实践

在国家重点支持的高新技术领域里,我校结合广东省的汽车产业特点对电子信息工程专业的专业理论和实验课程进行改革。本文介绍在电子信息工程专业开设汽车电子系列特色课程。该系列课程可以很大程度上调动学生的学习积极性,提高学生对综合性电子系统的分析和独立思考的能力。     

电力电子变换器中滤波电容参数设计方法

在电力电子变换器中,滤波电容可以抑制电压脉动,消除谐波,其参数大小对变换器的性能有着重要影响。本文首先分析滤波电容器的特性,得出影响电容器滤波效果的各个因素,然后介绍了几种常用的滤波电容器参数设计方法,最后通过一个全桥变换器进行了仿真验证,有助于学生更好地掌握滤波电容器的参数设计。     

利用EDA技术改革电子学实践教学

本文总结了EDA技术改造"电子学"课程的实践教学环节工作思路,通过搭建学生自主学习平台夯实理论知识和EDA基础知识,通过案例教学和网络学习平台激发学习兴趣、培养自学能力,教学中应用EDA技术引入实际工程培养学生研究能力,以课外科技问题研究实现创新意识的培养,实践教学改革收到了预期效果。     

Non-conventional metallic electrodes for organic field-effect transistors

We study micrometer-sized organic field-effect transistors with either Pd or NiFe metallic electrodes. Neither of these materials is commonly used in organic electronics applications, but they could prove to be particularly advantageous in certain niche applications such as organic spintronics. Using organic semiconductors with different carrier transport characteristics as active layer, namely n-type C60 fullerene and p-type Pentacene, we prove that Pd (NiFe) is a very suitable electrode for p- (n-) type semiconductors. In particular, we characterized devices with channel lengths in the order of the micrometer, a distance which has allowed us to evaluate the electronic behavior in a regime where the interfacial problems become predominant and it is possible to reach elevated longitudinal electric fields. Our experimental results agree well with a simple model based on rigid energy levels.     

Flexible thin-film transistors using multistep UV nanoimprint lithography

A multistep imprinting process is presented for the fabrication of a bottom-contact, bottom-gate thin-film transistor (TFT) on poly(ethylene naphthalate) (PEN) foil by patterning all layers of the metal–insulator–metal stack by UV nanoimprint lithography (UV NIL). The flexible TFTs were fabricated on a planarization layer, patterned in a novel way by UV NIL, on a foil reversibly glued to a Si carrier. This planarization step enhances the dimensional stability and flatness of the foil and thus results in a thinner and more homogeneous residual layer. The fabricated TFTs have been electrically characterized as demonstrators of the here developed fully UV NIL-based patterning process on PEN foil, and compared to TFTs made on Si with the same process. TFTs with channel lengths from 5 μm down to 250 nm have been fabricated on Si and PEN foil, showing channel length-dependent charge carrier mobilities, μ, in the range of 0.06–0.92 cm² V⁻¹ s⁻¹ on Si and of 0.16–0.56 cm² V⁻¹ s⁻¹ on PEN foil.     

Modeling thin film formation by Ultrasonic Spray method: A case of PEDOT:PSS thin films

Recent improvements in electronic and optoelectronic devices based on solution processable polymers have motivated development of scalable processing techniques like Ultrasonic Spray technique. Including potential for roll to roll fabrication, it has many other strengths. However, with spray coating it can be difficult to prepare films with a smooth surface. Here, we present model for Ultrasonic Spray deposition of thin films, which establish a clear correlation between process parameters and the film formation process, which ultimately decide the structural features of the thin films. Based on the time to cover the spray deposition area by the sprayed droplets and the time for droplet evaporation, a balance parameter has been defined. It provides a mean to determine suitable process parameters for uniform film formation by Ultrasonic Spray method. The model is further modified for the region of higher solution flow rates, where non-uniformity in droplet distribution is introduced. The predictions based on the model have been experimentally verified with thin films of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid (PEDOT:PSS). The method presented here can be used to predict proper deposition parameters for smooth film deposition by Ultrasonic Spray technique. Finally, the effect of film morphology on the sheet resistance of thin films of PEDOT:PSS is also presented.     

Fabrication of organic semiconductor crystalline thin films and crystals from solution by confined crystallization

Highly crystalline thin films of organic semiconductors processed from solution for electronic devices are difficult to achieve due to a slow and preferential three-dimensional growth of the crystals. Here we describe the development of a processing technique to induce a preferential two-dimensional crystalline growth of organic semiconductors by means of minimizing one dimension and confining the solution in two dimensions into a thin layer. The versatility of the process is demonstrated by processing small molecules (TIPS-pentacene and C₆₀) and a polymer (P3HT), all from solvents with a relatively low boiling point, to obtain crystalline thin films. The thin films show an improved in-plane packing of the molecules compared to films processed under similar conditions by spin coating, which is beneficial for the use in organic field-effect transistors.     

Activation Energy Spectra: Insights into Transport Limitations of Organic Semiconductors and Photovoltaic Cells

Some mechanisms of charge transport in organic semiconductors and organic photovoltaic (OPV) cells can be distinguished by their predicted change in activation energy for the current, E_a, versus applied field, F. E_a versus F is measured first in pure films of commercially available regioregular poly(3‐hexylthiophene) (P3HT) and in the same P3HT treated to reduce its charged defect density. The former shows a Poole–Frenkel (PF)‐like decrease in E_a at low F, which then plateaus at higher F. The low defect material does not exhibit PF behavior and E_a remains approximately constant. Upon addition of [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM), however, both materials show a large increase in E_a and exhibit PF‐like behavior over the entire field range. These results are explained with a previously proposed model of transport that considers both the localized random disorder in the energy levels and the long‐range electrostatic fluctuations resulting from charged defects. Activation energy spectra in working OPV cells show that the current is injection‐limited over most of the voltage range but becomes transport‐limited, with a large peak in E_a, near the open circuit photovoltage. This causes a decrease in fill factor, which may be a general limitation in such solar cells.