Istanbul is one of the most famous historical cities in the world. However, the project alignment selected as the best of a range of alignments cannot avoid passing beneath the historical and cultural heritages of Istanbul as well as under ancient and densely inhabited areas of the city. This paper will explain some of the challenges related to the bored tunnels.
Historical buildings are vulnerable. Yet many existing residential and office buildings are old and constructed on minimal foundations. As a consequence, it is vital that any drawdown of groundwater and any ground settlements have to be minimized.
In addition, the connection between the immersed and bored tunnels will be made directly and totally underground, without the usual intermediate shafts and beneath the deep waters of the Bosphorus Strait. This operation needs the utmost control of the tunnel excavation face to ensure its stability and to minimize water ingress. Based on such considerations, tunnel excavation by tunnel boring machine (TBM) using a slurry shield and having the ability to operate under high pore pressures was recommended as the method of excavation for the main running tunnels.
The paper will explain how the design team from Avrasyaconsult – the Employer’s Representative – arrived at the final minimum, specific and functional requirements of the bored tunneling works which are to be carried out using the ‘FIDIC EPC/Turnkey Project’ conditions. 相似文献
Benchmarking is a technique derived for management purposes, intended to identify outliers in any population as possible problems for resolution. Several regulatory agencies have tried to use benchmarking to define the degree of inefficiency of regulated companies, by reference to some target or frontier. This paper identifies the main problem inherent in trying to adapt a management technique to a regulatory purpose – namely that it requires the exercise of subjective judgements. The resulting lack of predictability and objectivity is not conducive to the provision of efficient regulatory incentives.This paper explains where subjective judgement enters into regulatory applications of benchmarking, which is not always apparent. The choice of model and selection of data sets are two obvious areas, but the main problem arises over the assumption that any costs not explained by the model must be due to inefficiency. Such assumptions are simply unsupported by evidence and lead to cost targets (or cost reduction targets defined over several years) that are little better than subjective guesses. There are other, superior ways to set cost reduction targets, based on long-term trends in total factor productivity for the regulated sector, which are used in the US and in other countries. However, some regulators feel obliged to use benchmarking and the paper concludes with recommendations as to how benchmarking should support further and more objective investigations into the costs of regulated utilities. 相似文献
In order to prepare low resistance ohmic contacts to p-ZnSn by the “deposition and annealing (DA)” technique which has been
extensively used for GaAs and Si-based devices, formation of a heavily doped layer by the p-ZnSe/metal reaction is required.
For p-ZnSe/Ni contacts, Ni and Se reacted preferentially at the ZnSe/Ni interface upon annealing at temperatures higher than
250°C. However, capacitance-voltage measurements showed that the net acceptor concentration (NA-ND) close to the p-ZnSe/Ni interface was reduced upon the Ni/ZnSe reaction, resulting in high contact resistance. For p-ZnSe/Au
contacts, neither Au/ZnSe reaction nor reduction of the acceptor concentration were observed after annealing at temperatures
lower than 300°C. This indicates that although the metal/p-ZnSe reaction is mandatory to prepare a heavily doped layer, the
reaction induced an increase in the compensation donors in the p-ZnSe substrate. In order to increase the acceptor concentration
in the vicinity of the p-ZnSe/metal interface through diffusion from the contact materials, Li or O which was reported to
play the role of an acceptor in ZnSe was deposited with a contact metal and annealed at elevated temperatures. Ni or Ag was
selected as the contact metal, because these metals were expected to enhance Li or O doping by reacting with ZnSe. However,
the current density-voltage characteristics of the Li(N)/Ni and Ag(O) contacts exhibited rectifying behavior, and the contact
resistances increased with increasing annealing temperature. The present results indicated that, even though the acceptor
concentration in the p-ZnSe substrate increased by diffusion of the dopants from the contact elements, an increment of the
compensation donors was larger than that of the acceptors. The present experiments indicated that preparation of low resistance
ohmic contacts by forming a heavily doped intermediate layer between p-ZnSe and metal is extremely difficult by the DA technique. 相似文献