首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   13715篇
  免费   1236篇
  国内免费   1226篇
电工技术   928篇
综合类   1467篇
化学工业   1894篇
金属工艺   811篇
机械仪表   437篇
建筑科学   549篇
矿业工程   121篇
能源动力   321篇
轻工业   723篇
水利工程   224篇
石油天然气   152篇
武器工业   55篇
无线电   1574篇
一般工业技术   1896篇
冶金工业   291篇
原子能技术   318篇
自动化技术   4416篇
  2024年   58篇
  2023年   334篇
  2022年   445篇
  2021年   478篇
  2020年   491篇
  2019年   519篇
  2018年   455篇
  2017年   535篇
  2016年   520篇
  2015年   484篇
  2014年   690篇
  2013年   1052篇
  2012年   844篇
  2011年   980篇
  2010年   703篇
  2009年   849篇
  2008年   822篇
  2007年   800篇
  2006年   705篇
  2005年   602篇
  2004年   565篇
  2003年   429篇
  2002年   412篇
  2001年   345篇
  2000年   311篇
  1999年   257篇
  1998年   227篇
  1997年   203篇
  1996年   162篇
  1995年   148篇
  1994年   113篇
  1993年   120篇
  1992年   88篇
  1991年   62篇
  1990年   60篇
  1989年   54篇
  1988年   39篇
  1987年   28篇
  1986年   18篇
  1985年   14篇
  1984年   25篇
  1983年   23篇
  1982年   10篇
  1981年   13篇
  1980年   11篇
  1979年   12篇
  1978年   8篇
  1977年   7篇
  1976年   10篇
  1965年   6篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
21.
The nucleotide analog sofosbuvir, licensed for the treatment of hepatitis C, recently revealed activity against the Zika virus (ZIKV) in vitro and in animal models. However, the ZIKV genetic barrier to sofosbuvir has not yet been characterized. In this study, in vitro selection experiments were performed in infected human hepatoma cell lines. Increasing drug pressure significantly delayed viral breakthrough (p = 0.029). A double mutant in the NS5 gene (V360L/V607I) emerged in 3 independent experiments at 40–80 µM sofosbuvir resulting in a 3.9 ± 0.9-fold half- maximal inhibitory concentration (IC50) shift with respect to the wild type (WT) virus. A triple mutant (C269Y/V360L/V607I), detected in one experiment at 80 µM, conferred a 6.8-fold IC50 shift with respect to the WT. Molecular dynamics simulations confirmed that the double mutant V360L/V607I impacts the binding mode of sofosbuvir, supporting its role in sofosbuvir resistance. Due to the distance from the catalytic site and to the lack of reliable structural data, the contribution of C269Y was not investigated in silico. By a combination of sequence analysis, phenotypic susceptibility testing, and molecular modeling, we characterized a double ZIKV NS5 mutant with decreased sofosbuvir susceptibility. These data add important information to the profile of sofosbuvir as a possible lead for anti-ZIKV drug development.  相似文献   
22.
Passive permeability is a key property in drug disposition and delivery. It is critical for gastrointestinal absorption, brain penetration, renal reabsorption, defining clearance mechanisms and drug-drug interactions. Passive diffusion rate is translatable across tissues and animal species, while the extent of absorption is dependent on drug properties, as well as in vivo physiology/pathophysiology. Design principles have been developed to guide medicinal chemistry to enhance absorption, which combine the balance of aqueous solubility, permeability and the sometimes unfavorable compound characteristic demanded by the target. Permeability assays have been implemented that enable rapid development of structure-permeability relationships for absorption improvement. Future advances in assay development to reduce nonspecific binding and improve mass balance will enable more accurately measurement of passive permeability. Design principles that integrate potency, selectivity, passive permeability and other ADMET properties facilitate rapid advancement of successful drug candidates to patients.  相似文献   
23.
24.
探针馈电圆柱共形微带天线阻抗特性的FDTD法分析   总被引:1,自引:0,他引:1       下载免费PDF全文
将圆柱坐标系下非分裂式理想匹配层吸收边界条件(UPML)引入到圆柱共形微带天线的全波分析中,并给出了其中的场量迭代方程,明显地减小了计算空间,简化了编程;提出了圆柱坐标系下考虑有限尺寸探针半径的新算法,使得计算结果更加精确;应用GPOF方法预估了时域晚时响应,使计算时间减少了70%~90%。本文给出的模型能够对任意多层圆柱共形结构的微带天线进行计算,因此对此类天线的CAD设计具有实际意义。  相似文献   
25.
A self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n+-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO2 and 300 nm Si3N4. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi2 layer and a subsequent out-diffusion process to form the n+-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.  相似文献   
26.
Thermal barrier coatings (TBC) are widely used to prevent transient high temperature attack and allow components high durability. Due to strong inhomogeneous material properties the TBC failure often initiates near the interface between the brittle oxide layer and the ductile substrate. A reliable prediction of the TBC failure requires detailed information about the crack tip field and the consequent fracture criteria. In the present paper both cohesive model and gradient plasticity are used to simulate the failure process and to study interdependence of the interface stress distribution with the specific fracture energies. Computations confirm that combination of the two models is able to simulate different failure mechanisms in the TBC system. The computational model has the potential to give a realistic prediction of the crack propagation process.  相似文献   
27.
E-business success factors are Important for traditional enterprises to implement e-business. This topic is attracting more and more researchers to study. This paper makes an exploratory study on the factors influencing e-business success. Firstly, based on the literature review, 52 factors are suggested. Secondly, two rounds of survey with Delphi method are conducted. Qualitative and quantitative analysis are used to identify 57 factors. This is the foundation of empirical study.  相似文献   
28.
Abstract. In Keich (2000 ),we define a stationary tangent process, or a locally optimal stationary approximation, to a real non-stationary smooth Gaussian process. This paper extends the idea by constructing a discrete tangent – a `locally' optimal stationary approximation – for a discrete time, real Gaussian process. Analogously to the smooth case, our construction relies on a generalization of the recursion formula for the orthogonal polynomials of the spectral distribution function. More precisely, we use a generalization of the Schur parameters to identify the stationary tangent. By way of discretizing, we later demonstrate how this tangent can be used to obtain `good' local stationary approximations to non-smooth continuous time, real Gaussian processes. Further, we demonstrate how, analogously to the curvatures in the smooth case, the Schur parameters can be used to determine the order of stationarity of a non-smooth process.  相似文献   
29.
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuOx/TiN/poly-Si/Si contact system.  相似文献   
30.
一种基于小波逼近的稳定直接自适应控制算法   总被引:3,自引:0,他引:3  
刘山  吴铁军 《自动化学报》1997,23(5):636-640
针对一类未知不稳定非线性系统,基于小波逼近理论,提出了一种直接自适应控制 算法,并由Lyapnov理论证明了整个控制闭环系统的稳定性.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号