网络展开图与符号网络分析

采用封闭网络模型,按照电路元件参数,采用开路、短路和着色运算,将电路图逐层分解,得到网络展开图.给出网络展开图的概念和运算规则,指出网络展开图中从根到末稍每个路径的值就是网络行列式展开式中的一个有效项,从而由网络展开图得到符号网络函数.该方法直接对电路图进行运算,不需要建立任何形式的电路方程和行列式,适用于一般的有源电路,而且能生成各种类型的网络函数.     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

Neural Computation of the MoM Matrix Elements for Planar Configurations

In this paper a new artificial neural network (ANN) based model for the calculation of the method of moments (MoM) matrix elements is presented. Training sets that characterize the matrix elements are first constructed. These sets are then utilized to effectively train two radial basis function (RBF) neural networks to accurately estimate all the elements of the MoM matrix for any mesh used. The potential of the proposed approach is demonstrated in the case of a narrow microstrip line. The current distribution on the microstrip line produced by the trained RBF networks agrees very well with the exact distribution. In addition, the proposed ANN model is much faster than the conventional MoM procedure.     

基于一类T-模的模糊Hopfield网络的稳定性分析

本文建立了基于一类T-模的一种动态模糊神经网络-(∨,T)Hopfield网.文章首先证明了系统本身的稳定性及系统平衡态的Lyapunov稳定性,然后建立了吸引子的一个非平凡吸引域,使系统具有良好的容错性.最后,通过例子验证了得到的结论.     

Doped silicon and NIS junctions for bolometer applications

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers.     

Stability of Equilibria in a Four-dimensional Nonlinear Model of a Hydraulic Servomechanism

Starting from plysical laws a four-dimensional nonlinear model for mecano-hydraulic servomechanisms is deduced. The stability of its equilibria is analysed using a theorem of Lyapunov and Malkin to handle the critical case due to the presence of zero in the spectrum of the matrix of the linear part around equilibria. Stability diagrams are drawn and simulation results are presented through phase diagrams.     

下T6-361井多井防碰绕障技术

下T6—361井是一口双靶定向井，由于受地面和地质条件的限制，必须穿越9口井，其中最近的4口井防碰距仅为13—32m，钻井施工难度大，是一口较典型的多井防碰绕障定向井。在优化井身剖面设计、优选钻具组合、采用导向钻井技术的基础上，采取了一系列安全钻进措施，顺利钻至设计井深。对该井的地质工程设计、井眼轨迹控制及防碰绕障技术等进行了介绍，对同类型井的施工有一定的借鉴。     

Alpha induced reactions on Sn: An experimental study of excitation functions and possible production pathways

In the frame of a systematic study of light ion induced threshold reactions on natural tin (Sn) excitation functions for alpha particles induced reactions are presented in a 12–38 MeV energy domain. Using a stacked foil activation method the following radioisotopes were identified: ¹¹⁶Te, ¹¹⁷Te, ¹¹⁸Te, ¹¹⁹Te, ¹²¹Te, ¹²³Te, ¹¹⁷Sb, ¹¹⁸Sb, ¹²⁰Sb, ¹²²Sb, ¹²⁴Sb, ¹²⁶Sb, ¹¹⁷Sn, ¹¹¹In. The experimental cross sections for these isotopes are presented for the first time in this energy range and a direct comparison with values calculated with the ALICE-IPPE code is discussed. Possible use of these data for production of some isotopes relevant in nuclear medicine is suggested.