数值解析混合法分析永磁直线同步电机性能

针对数值法或解析法研究永磁直线同步电机(permanent magnet linear synchronous motor,PMLSM)性能时存在的不足,采用数值解析混合法研究PMLSM磁场,把电机的磁场划分区域,针对各区域特点分别采用纯解析法和数值法,气隙区包括永磁体无网格剖分,采用解析法获得此区的磁场解析表达式;初级齿槽区采用有限元法研究电枢不同励磁形式、齿槽及端部半填槽对磁场的影响.解析和有限元法通过两者的边界条件相耦合,建立并求解电机的磁场,获得空载电势与磁链参数,分析工作在SPWM-VI下PMLSM的动态性能,提出PMLSM空载电势实验的一种新方法,仿真和实验结果进行比较分析,验证了数值解析混合法分析PMLSM性能的正确性及快速性.     

饱和哈密顿控制系统可镇定性分析(英文)

研究了一类具有饱和的耗散哈密顿控制系统的有限增益可镇定性问题.在一定条件下运用静态输出反馈使得系统达到全局渐近稳定.另外,针对哈密顿系统中的非线性函数提出进一步的演变条件,利用相同的反馈律使得闭环系统达到有限增益L2镇定,同时获得有限增益的估计值.仿真结果验证了所提结论的有效性.     

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported,to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions.This novel structure offers low barrier height at the source and offers high ON-state current.The ION/IoFF of ISE-CGAA-SB-MOS-FET increases by 1177 times and offers steeper subthreshold slope (～60 mV/decade).However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate,dual metal gate,single metal gate with ISE,and dual metal gate with ISE has been presented.The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design.The numerical simulation is performed using the ATLAS-3D device simulator.     

CeO_2掺杂引起SnO_2压敏电阻的晶粒尺寸效应

研究了掺CeO2对SnO2Co2O3Ta2O5压敏电阻器性能的影响。研究发现:随着x(CeO2)从0增加到1%,压敏电压从190 V/mm增加到205 V/mm,相对介电常数从3 317减小到2 243,晶粒平均尺寸从12.16 mm减小到6.23 mm,在晶界上的Ce4+阻碍了SnO2晶粒的生长。为了解释样品电学非线性性质的起源,笔者提出了SnO2Co2O3Ta2O5CeO2晶界缺陷势垒模型。同时,对该压敏电阻器进行了等效电路分析,试验测量与等效电路分析结果相符。     

电场积分方程矩量法中具有局部连续性的基函数积分奇异性降阶处理

三维散射与辐射问题常基于电场积分方程(EFIE),运用矩量法求解。该文证明了只要所选择的屋顶基函数(rooftop basis functions)具有局部连续性,无论对于平面或者曲面单元,都能将求解阻抗矩阵元素的积分函数写成一种对称形式,使得其奇异性降为 O(1/R),从而避免了现有文献中因处理源点和观察点重合时出现的O(1/R2)奇异性所导致的积分复杂性,数值计算结果表明了简化后计算公式的有效性和可靠性。     

6H-SiC Schottky二极管的正向特性

提出了一种考虑Schottky结势垒不均匀性和界面层作用的Si C Schottky二极管( SBD)正向特性模型,势垒的不均匀性来自于Si C外延层上的各种缺陷,而界面层上的压降会使正向Schottky结的有效势垒增高.该模型能够对不同温度下Si C Schottky结正向特性很好地进行模拟,模拟结果和测量数据相符.它更适用于考虑器件温度变化的场合,从机理上说明了理想因子、有效势垒和温度的关系.     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

Pinhole density measurements of barriers deposited on low-k films

Evaluation of diffusion barrier integrity is an important issue in advanced interconnects. A diffusion barrier separating Cu from low-k must be as thin as possible and must not contain pinholes. We have developed a method for measuring pinhole density in diffusion barriers deposited on low-k materials. The method employs ellipsometric porosimetry for measuring diffusion of toluene in a porous low-k film beneath the barrier in question.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

单向耦合混沌系统在密码学和信息安全中的应用

通过加密实现私有数据的授权访问是一项很重要的技术。如今,密码学意义上安全的DES,RSA加密标准得到了广泛应用。Baptista提出的混沌加密是密码学史上新的发展方向,它继承了混沌系统的重要特性,比如对初始值极度敏感。在描述混沌系统的理论基础上提出了混沌保密系统的一种结构,并使用蔡氏电路实现了文本、图片的保密通信。