Hierarchical intelligent control with flexible AC transmission systems application

A novel hierarchical intelligent controller configuration is proposed using an artificial neural network as a control-mode classifier in the supervisory level and a set of pre-designed controllers in the lower level. Controller outputs are modified nonlinearly by the classifying signals in a structure resembling one artificial neuron with adaptively changed weights. The lower-level local controllers are implemented using neural networks. An illustrative example of this approach is based on the transient stabilization of a single-machine infinite-bus system studied in Flexible AC Transmission Systems (FACTS) research.     

二(二甲苯基)丙烷合成工艺的研究

二氯丙烷(DCP)与二甲苯在混合金属氯化物催化剂(HD90)作用下合成二(二甲苯基)丙烷,生产过程简单,产品收率高。在60—80℃的温度下,二甲苯与二氯丙烷摩尔比为6∶1,HD用量50克/摩尔DCP的条件下反应5—6小时,二(二甲苯基)丙烷的收率可达88％以上。     

膨润土凝胶调剖剂XJF的研制及应用

介绍了调剖剂XJF的配方,讨论了影响调剖剂性能的配方因素(膨润土含量、HPAM溶液浓度、XJ用量及添加剂Fc的浓度),考察了封堵能力和应用范围,简介了在火烧山油田现场试验的结果。     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

基于邻域统计特性的概率神经网络及其在自动目标识别中的应用

在概率神经的一种改进模型－ＦＤＯ网络的基础上，提出在设计网络收敛域时进一步考虑每一像素点周围８邻域的影响，对网络的作用函数加以修，使改进后的网络具有稳定性好且收敛速度快的优点。通过实验对改进前后网络的识别性能加以比较，证明改进后的网络特别适用于噪声图像的识别。     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

The growth and characterization of AlGaAs double heterostructures for the evaluation of reactor and source quality

AlGaAs double heterostructures are grown by low-pressure metalorganic chemical vapor deposition to evaluate the level of oxygen contamination in different trimethylaluminum sources. Effects of arsine purifiers, misoriented substrates, atmospheric exposure of the growth chamber, and possible phosphorus contamination are also studied. Extensive characterization is performed on these films by a variety of methods, including high-resolution x-ray diffraction, photoluminescence (PL), time-resolved photoluminescence, and secondary-ion mass spectrometry. The PL intensities for structures grown with the low-alkoxide grade are reproducibly much greater than those grown with the regular-grade TMA1. The use of AsH₃ purification improves the PL intensity.     

局域网服务器缓冲区容量的Petri网设计方法

本文在分析局域网服务器信息缓冲区、数据包接受和发送缓冲区的相互关系基础上提出一种新的局域网服务器缓冲区设计方法─—广义随机Ｐｅｔｒｉ网方法，并给出了局域网服务器信息缓冲区的广义随机Ｐｅｔｒｉ网模型。该设计方法理论完备、严谨实用，且不再局限于追求某一边界值（上限或下限），并且避免了排队理论处理多级服务的繁琐公式。最后本文用一例题说明了这种方法的应用。     

分子结构对增塑聚氯乙烯性能的影响

研究了聚合度、分子量分布和支化结构对增塑聚氯乙烯加工流变性能和物理力学性能的影响。结果表明，增塑ＰＶＣ的加工流变性能随聚合度的增加而恶化；拓宽分子量分布和引入支化结构均有利于加工流变性能的提高；增塑ＰＶＣ的拉伸强度随聚合度的增加而提高，而压缩永久变形却随之减小；分子量分布对物理力学性能的影响不大；支化ＰＶＣ的拉伸强度略有下降。     

An Object-Oriented Transaction Model

In object-oriented database systems(OOBSs),the traditional transaction models are no longer suitable because of the difference between the object-oriented data model(OODM)and the conventional data models(e.g.relational data model).In this paper,transction models for advanced database applications are reviewed and their shortcomings are analyzed.Exchangeability of operations is proposed instead of commuativity and recoverability for using more semantics in transaction management.As a result,an object-oriented transaction model(in short,OOTM)is presented.It is not modeled for some special application,but directly based on object-oriented paradigms.A transaction is regarded as an interpretation of a metho.Each transaction(even subtransactions)keeps relative ACID(Atomicity,Consistency,Isolation,Durability)properties,therefore the special problems appearing in OOBSs such as“long transactions”,“visibility of inconsistent database state”can be solved.