含蜡原油结构抑制机理研究

基于含蜡模拟油加抑制剂GY1前后的特征温度、流变参数、析蜡量及微观结构的实验分析,研究含蜡原油结构抑制机理.结果表明:①抑制剂GY1不能阻止蜡结晶与晶核的形成,反而使析蜡量有所增加;②对于含粗晶蜡的模拟油,抑制剂GY1将阻碍其蜡晶生长,使蜡晶尺寸变小、非对称性增大,进而增强蜡晶颗粒相互作用与连接趋势,宏观表现为降凝与降粘效果差;③对于含微晶蜡的模拟油,抑制剂GY1有助于其蜡晶的聚集生长,使蜡晶尺寸变大、表面结合力降低,进而抑制蜡晶颗粒相互作用与连接趋势,宏观表现为降凝降粘效果显著;④含蜡原油结构抑制的机理就是使蜡晶颗粒聚集变大、提高其对称性、降低其分散度、抑制其相互作用与连接的机理.     

沟槽面在湍流减阻中的应用

对近些年来的沟槽面湍流减阻技术的工业应用方向 ,沟槽的几何形状和尺度、流场压力梯度、沟槽面放置方式对于沟槽减阻效能的影响 ,沟槽面对于湍流边界层流动特性的影响 ,沟槽面的湍流减阻机理几方面研究进展进行了综述。从湍流拟序结构理论出发提出 :具有减阻效应的沟槽面不但能通过控制低速制条带间距来降低湍流“猝发”频率 ,而且在“猝发”后的高速“下扫”过程中因其几何结构使藏在槽内的安静流体避免或部分避免因高速“下扫”而“诱导”出较大速度剪切层 ,从而实现减阻。同时指出需要利用先进的实验技术如PIV等图像处理手段并结合直接数值模拟对湍流边界层的瞬时流场进行研究 ,以其找出湍流边界层的流动结构及其运动规律。     

线性视划鞍点算法原理与实际计算

阐述了线性规划鞍点算法原理与实际计算.讨论了在基不变条件下,算法的收敛性和迭代步长的选择问题.指出算法性质为q-线性收敛.鞍点算法软件与美国优化技术中心编制的内点算法软件PCx进行了比较,用两种算法计算网上NET LEB 的线性规划问题,公布了比较结果.线性规划鞍点算法已应用到石化企业的优化生产工作.     

电磁场法向分量边界条件非独立性的微分法证明

电磁场的法向分量边界条件不独立 ,但先前关于这一命题的微分法证明有局限性 .文中指出了这一局限性 ,给出了对任何光滑界面普遍适用的微分证明法 .     

关于剖面符号边界问题的研究

总结了剖面符号可能的四种边界类型,指出了常见的边界错误情况,论证了剖视图中剖面符号不能穿越粗实线。     

光子晶体缺陷态构造多通道波分复用器

提出了一种新的二维光子晶体的缺陷结构。该结构在光子晶体中构成光波导,能使光子禁带中不同的被选择的缺陷态频率的光子以极低的损耗通过。采用带有吸收边界条件的时域有限差分方法模拟了光波在该种结构中的传播。以该结构为基础,可以在微米尺度的光子晶体中制作波分复用器等光学元件,而且其各信道具有相近的高传输系数。     

Thermal characterization of gallium arsenic nitride epilayer on gallium arsenide substrate using pulsed photothermal reflectance technique

Thermal conductivity of gallium arsenic nitride (GaAsN) epilayer on gallium arsenide (GaAs) substrate prepared by molecular beam epitaxy technique was measured using pulsed photothermal reflectance technique. Three-layer model incorporated thermal boundary resistance was applied to extract the thermal properties from the sample's photothermal response. Within the thickness ranging from 20 to 80 nm, no thickness dependent relationship with thermal conductivity of GaAsN epilayer was found, and the average thermal conductivity is approximately 27 W/mK at room temperature. The thermal boundary resistance at the Au/GaAsN interface is in the order of 10⁻⁸ m²K/W.     

Numerical Modeling of Grain Boundary Effects in the Diffusional Creep of Copper Interconnect Lines

We propose a numerical simulation technique to model the process of diffusional creep and stress relaxation that occurs in Cu-damascene interconnects of integrated circuit devices in processing stage. The mass flow problem is coupled to the stress analysis through vacancy flux and equilibrium vacancy concentration. The technique is implemented in a software package that seamlessly integrates the problem-oriented code with commercially available finite element program MSC.Marc. It is utilized to model the Coble creep phenomenon by introducing the nanoscale grain boundary region having the thickness on the order of several layers of atoms. As an illustration, the two-dimensional problem of stress relaxation in a single grain subjected to prescribed displacements and tractions is examined.     

Perturbation method of the piezoelectric fracture mechanics considering the permittivity of the medium in the crack gap

In this paper, the problem of the cracks with arbitrary forms in piezoelectric material is studied. The permittivity of the medium in the crack gap is considered. Except the collinear cracks, this boundary condition is too difficult to deal with; therefore, a perturbation method is recommended. By the way, the electric boundary conditions of electric fracture mechanics are discussed. For example, a small parameter solution of a crack is given and compared with the known `exact' (it will be discussed later) solution. This result shows that the impermeable or permeable conditions are only the boundary conditions for the first approximations of the perturbation solutions.     

Influence of grain boundaries on short crack growth behaviour of IGSCC

Understanding short crack behaviour is essential for predicting the lifetime of light water reactor components. However, crack growth rates of short cracks are unsteady due to microstructural obstacles such as grain boundaries. On the other hand, the statistical behaviour of short cracks can be deduced from crack size distributions. Some papers have pointed out that the crack size distributions obtained by stress corrosion cracking tests showed a kink in the distribution line. This kink suggests that the short crack growth rate is slow compared with that of long cracks. And it can be thought that the slow growth rate is caused by the microstructural obstacles. This study investigated the influence of grain boundaries on the short crack growth behaviour of intergranular stress corrosion cracking. A crack growth simulation model, which considered the mechanical effects of the crack kink and bifurcation by grain boundaries, was developed. The crack depth distribution obtained by the simulation also exhibited a kink in the distribution line as seen in the experimental results. This suggests that grain boundaries play an important role in short crack growth behaviour.