基于“234”现代学徒制人才培养模式的研究与实践

2015年,教育部下发了关于现代学徒制项试点建设要求,经过5年多实践,探索出 “234”现代学徒制人才培养模式,即培养主体“两融合”(学院与企业两个主体深度融合)；培养方式“三对接”(课程内容与岗位标准相对接,教学过程与生产过程相对接,学历证书与职业资格证书相对接)；培养过程“四阶段”(企业认知、基础学习；岗位训练、工学结合；学徒实践、工学交替；顶岗实习、考核入职)。通过培养模式创新,学生学习主动性明显增强,人才培养质量显著提高。     

基于有线网络的广电5G集客业务发展机遇分析

本文概述5G时代广电集客业务的发展情况,分析了广电5G 700MHz网络开展集客业务的优势,以及多领域的成功案例,并对广电有线网络公司发挥广电5G优势推动集客业务发展做出了展望.     

Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration

Managing the emerging internal mechanical stress in chips, particularly if they are 3D stacked, is a key task to maintain performance and reliability of microelectronic products. Hence, a strong need of a physics-based simulation methodology emerges. This physics-based simulation, however, requires material parameters with high accuracy. A full-chip analysis can then be performed, balancing the need for local resolution and computing time. The key for an efficient simulation of a 3D stacked IC is a comprehensive database with material properties for multiple scales of the affected materials. Therefore, effective “composite-type” material data for several regions of interest are needed. Advanced techniques to measure FEA- and design-relevant properties such as adhesion properties and effective CTE values are presented.     

武器装备体系建设风险的风险因子模糊综合评价

为实时、准确地评价和跟踪武器装备体系（system of system,SoS）建设过程中的风险,对武器装备体系建设风险的风险因子进行模糊综合评价。分析武器装备体系建设风险的来源和成因,并将武器装备体系建设风险评价划分为5级层次,引入风险因子的概念,建立武器装备体系建设的风险评价模型,对武器装备体系建设风险进行5级模糊综合评价。该模型客观合理,为武器装备体系建设风险的评价提供了一种简单实用的方法。     

LK6804A 机床的数控化设计

为满足LK6804A机床数控化配套需求,设计了一套该机床的数控系统。采用德国西门子数控公司840D型数控散件模块和其它配套集成,实现两轴进给控制、使用PLC实现开关信号控制并与DMS一起监控。该系统已投入实际使用。实践结果证明：该套系统设计极具可行性和实用性,充分激活了机床和系统功能,具有很高的性价比。     

宽带多模干涉型光耦合器的设计

文章通过分析制约多模干涉型耦合器带宽的因素,提出三种可提高MMI带宽的设计方法。仿真结果表明,三种方法均可以不同程度地提高MMI的工作波长范围,对比于常规MMI耦合器的60nm工作波长范围,采用优化设计方法可将其带宽提高到140nm至210nm。当同时采用三种设计方法后,带宽可以达到300nm,是原结构带宽的5倍。     

智能流程应用模式下基于流程语义库的需求获取

为自动生成满足用户需求的个性化流程,在给出智能流程应用模式的基础上,提出一种用户个性化需求获取新方法。对业务流程中活动进行归纳和抽象,定义一种新服务——元服务,并由元服务组成流程语义库,然后基于流程语义库,提出一种用户需求获取算法,帮助用户快速准确地输入需求信息。理论分析和应用表明：算法提高了用户需求获取的准确程度和效率。     

Developing a conductive oxygen barrier for ferroelectric integration

For high-density FeRAM memories, the 1T–1C architecture has been proposed. In this scheme, the ferrocapacitor (FeCAP), a metal\ferroelectric film\metal-like sandwich, is placed directly on top of polysilicon or tungsten plugs contacted to the underlying CMOS technology. Our ferroelectric material of choice, SrBi₂Ta₂O₉ (SBT), requires crystallization anneals ranging from 650 to 800 °C in full oxygen. The bottom electrode (BE) needs to be conductive, as well as an oxygen barrier to protect the underlying plug from oxidation. We have developed a BE stack combination consisting of Pt/IrO₂/Ir/Ti(Al)N. Each layer plays a critical role in the performance of the barrier. Issues such as thermal expansion, stress relaxation, grain growth, and oxidation can be critical in order to have a working bottom electrode. For capacitor formation, the complete stack is etched and covered by SBT. Since all layers are in contact with SBT, it is important to understand how the ferroelectric interacts with both the individual layers and the combined structure. In this paper, we will present our understanding of the chemical reactivity between SBT and the BE stack, which has been successfully engineered to prevent oxidation of the underlying plug.     

基于数字电路设计直接比较型准四位ADC的仿真研究

为入门探索实现全数字化A/D转换器的集成设计方案,逐步改造4位简易ADC电路,使之成为基于门电路和触发器的设计范例。技术要点包括(1)量化编码基于CMOS非门阈值及其移动,(2)阈值移动基于非门组合传输门(替代电阻),(3)取样保持基于边沿D触发器,(4)ADC元架构业经搭建LSI电路验证成功。研究结论是Hspice仿真成功的该Flash型准4位ADC适用于低频段生物医学信号处理SoC的研制。     

GaAs基RTD与MSM光电集成

报道了GaAs基共振隧穿二极管(RTD)与金属-半导体-金属光电探测器(MSM PD)单片集成的两种光电集成电路,并在室温条件下分别测试了RTD器件、MSM器件和集成电路的电学特性.测试表明:RTD器件的峰谷电流比为4;由于改进了在半绝缘GaAs衬底上制作MSM的方法,5V偏压下的电流由原来的2μA增加到了18μA,基本实现了两种电路的逻辑功能.