CaF_2-CaO-MgO-Al_2O_3-SiO_2电渣渣系高温力学性能的研究

本文针对结晶器与铸锭作相对移动的电渣重熔过程中对渣系的高温强度及塑性的要求,对10种CaF_2-CaO-MgO-Al_2O_3-SiO_2渣组成进行了渣的高温强度及塑性的测定,建立了渣组成—渣的岩相结构—渣高温强度及塑性间的对应关系,并选择出较合适的成分范围为CaF_2 35～60％,CaO 10～25％,Al_2O_3 10～20％,SiO_25～15％,MgO≈5％。对其中一个成分的渣进行了电渣热穿孔熔铸中空锭生产实验,并取得了良好的表面质量。     

Synthesis and Crystal Structure of RE[CH_2(CH_2)_4CONC_4H_9]_3(NO_3)_3(RE=Dy,La)

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用于多种组装技术的厚膜导体复合结构

厚膜导体Ｐｄ－Ａｇ／Ａｕ、Ｐｔ－Ｐｄ－Ａｕ／Ａｕ平面复合结构，Ｐｄ－Ａｇ／Ａｕ立体复合结构可使多种组装技术相互兼容。立体复合结构还可有效地降低导体线电阻，减少线损耗。而且，其超声键合性尤佳     

宣钢近北庄铁矿露采边坡稳定的结构分析

以宣钢近北庄铁矿露采边坡稳定性研究为例，说细说明了岩体结构分析方法的应用。     

片式多层电容电阻复合元件的研制

采用低温共烧陶瓷(LTCC)技术将电容、电阻元件集成在多层陶瓷基板里,构成了一种新型的片式多层复合元件,并研究了其制造工艺性能和频率特性。结果表明,片式多层电容电阻复合元件制造工艺适合批量化生产,并为片式多层LC滤波器、LTCC基板及器件的研发提供了极好的参考价值。     

一种图文数据库系统的设计与实现

随着计算机技术的发展和水平的提高，图像，声音，图形等多媒体信息逐步应用于管理信息系统之中。文章中提出了图文数据库系统设计中存在的三个基本问题。讨论了介绍了图文数据库系统的设计方法和实现技术。     

双室工频感应炉的研制

介绍了双室工频感应炉的工作原理,炉子主要结构及其技术特征。     

Structure and formation energy of steps on the GaAs(001)-2 × 4 surface

The energies of various steps on the As-terminated GaAs(001)-2 × 4 surface are evaluated using a novel, approximate method of “linear combination of structural motifs”. It is based on the observation that previous total energy minimizations of semiconductor surfaces produced invariably equilibrium structures made of the same recurring local structural motifs, e.g. tetrahedral fourfold Ga, pyramidal threefold As, etc. Furthermore, such surface structures were found to obey consistently the octet rules as applied to the local motifs. We thus express the total energy of a given semiconductor surface as a sum of (i) the energies _M of the local structural motifs appearing in the surface under consideration and (ii) an electrostatic term representing the Madelung energy of point charges resulting from application of the octet rule. The motif energies are derived from a set of pseudopotential total energy calculations for flat GaAs(001) surfaces and for point defects in bulk GaAs. This set of parameters suffices to reproduce the energies of other (001) surfaces, calculated using the same pseudopotential total energy approach. Application to GaAs(001)-2 × 4 surfaces with steps reveals the following. (i) “Primitive steps”, defined solely according to their geometries (i.e. step heights, widths and orientations) are often unstable. (ii) Additional, non-geometric factors beyond step geometries such as addition of surface adatoms, creation of vacancies and atomic rebonding at step edges are important to lower step energies. So is step-step interaction. (iii) The formation of steps is generally endothermic. (iv) The formation of steps with edges parallel to the direction of surface As dimers (A steps) is energetically favored over the formation of steps whose edges are perpendicular to the As dimers (B steps).     

双辊铸轧机生产工艺对组织和性能的影响

就用双辊铸轧机(TRC)生产薄、宽铸轧带技术进行研究并优化铸轧工艺。研究结果表明：3mm厚的铸轧带不仅表面变形．而且整个厚度内部层都发生变形，表面层的铝基中具有较高的合金元素饱和度。     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.