麦秸秆加筋盐渍土的尺寸效应与制样问题处置

制备均匀且整体性较好的试样是保证室内实验结果可靠的前提条件。提出了两端压实的静力制样法,围绕制样中出现的几个问题,制定了适宜的应对措施。同时完成了不同直径的盐渍土和麦秸秆加筋土试样的抗压强度实验,分析了试样抗压强度的尺寸效应,以及试样直径与加筋条件间的比例关系。结果显示:采用两端压实的静力制样方法制备加筋土试样是可行的;两种试样均存在明显的尺寸效应;由于麦秸秆的加筋作用,使得麦秸秆加筋土不同尺寸试样的抗压强度尺寸效应大于盐渍土的,且其抗压强度的尺寸效应随试样尺寸的增大而越来越明显;适宜加筋长度为0.316倍试样直径,适宜加筋率0.25%。研究结果可为制备合格的加筋土试样提供参考,也有益于在未来的研究中选择更合理的麦秸秆加筋条件。     

巨磁电阻效应混频应用研究

本文从理论上分析了在无线通信接收系统中,应用巨磁电阻器件加入交变信号,在输出端口得到所加信号与接收信号混频效应的可能,并在实验上验证了该理论的正确性。巨磁电阻器具有可以在较高的频率下工作,增加系统的检测灵敏度和设计的灵活性等特点,广泛应用于弱磁探测领域和无线通讯系统中。     

Effects of Moisture on Furfural Partitioning in Oil-Paper Insulation System and Aging Assessment of Power Transformers

The furfural concentration in oil is a well-accepted chemical marker indicating the aging condition of power transformers. However, recent researches suggest that the furfural concentration in oil is affected by moisture, because moisture influences the furfural partitioning ratio in oil-paper insulation system. In this study, the correlation of moisture and furfural partitioning ratio was investigated. The accelerated thermal aging test and moisture absorption test were conducted to prepare oil-paper samples with different furfural and moisture concentrations. For samples with different moisture concentrations, the furfural partitioning ratios between oil and paper were compared. Results showed that samples with high humidity exhibited a high furfural mass fraction in oil. This finding implied that high humidity promoted the furfural diffusion from paper to oil. Further, the interference of moisture on aging assessment of insulation paper was analyzed. Results showed that the increase of moisture concentration in oil-paper system would significantly affect the accuracy of insulation paper aging assessment. A corrected equation for aging assessment of insulation paper with different moisture concentrations was established. Verification result showed that the equation could effectively correct the interference of moisture and enhance the accuracy of the aging assessment of insulation paper.     

多芯片组件基板的热效应分析

针对大功率多芯片模块,建立了简化传热模型,利用有限元数值方法,对其热阻和温度场进行了稳态和瞬态分析.模拟结果表明:模块的散热方式以热传导为主.由芯片到外壳底面的热通路为主要散热途径,采用导热性能好的基板是非常有效的散热方案:绝缘层热阻占整个基板热阻的65%;模块设计时要尽量减小功率互连引线的寄生电感和电阻.合理安排功率管芯位置,要求布线尽量短而宽.多个功率芯片要尽量均匀分布于基板上,以此降低结温,避免热集中现象.     

一种新型传感结构的光学直流电流传感器

分析比较了多种直流大电流测量方法,指出直流测量设备高压侧无源化是未来高压测量设备的发展趋势。针对传统块状玻璃型电流传感器传感头加工难度大、直流解调算法难以精确解调出法拉第旋转角的缺点,采用一种基于双光源双输出条形传感头的新型无源式直流电流传感器。这种结构降低了传感头制作及加工难度,在双通道光路、电路不对称的情况下,能够将与被测电流成正比的直流信号从直流本底光强信号精确解调出来。试验结果表明,在300 ~3 000 A范围内,测量准确度优于0.5%,在光功率波动达25.2%、双光路光功率不对称度为34.2%的情况下,双光源双输出传感器相对误差变化范围为-0.4% ~ +0.42%,远高于相同测试条件下单光源双输出传感器的性能。     

激光双截面转速波动法监测转轴动态扭矩

基于激光多普勒效应和转动动力学原理,提出一种直接监测转轴动态扭矩的新方法,并建立了数学模型。通过构造光学测试系统使4束高相干激光投射到转轴轴段两截面上4点,具有多普勒频移的反射光在光电探测器上发生混频,光电流频差正比于角速度。测得相邻时刻两截面的瞬时转速,得到轴段转速波动值及两端面相对转速波动值,进而实现转轴动态扭矩的直接监测。实验验证了该方法的可行性。与传统方法相比,该方法实时性强,具有较宽的动态范围,对动态扭矩的识别值提高了5%~10%,反映了转轴扭矩波动的动态特性。     

The meta-stable dip (MSD) effect in SOI FinFETs

The meta-stable dip (MSD) effect is demonstrated and characterized in SOI FinFETs. With ascending scan of front-gate voltage (V_G1), the magnitude of drain current (I_D) tends to be fixed within a specific region of the front-gate voltage and this leads to a dip of transconductance (g_m). The dip width can be modulated through a control of bias condition or measurement speed such as back-gate voltage (V_G2), drain voltage (V_D) and step size of the front-gate voltage. From the dual-gate transient measurement, it is found that the MSD effect is highly dependent on the floating-body effect. In SOI FinFETs, the MSD effect is significantly affected by the fin width due to the fringing electric field of the lateral gates.     

RF-CMOS建模:MOST在片测试结构寄生分析

提出了一种新的RF-CMOS晶体管在片测试结构寄生模型,模型综合考虑了射频/微波条件下RF-MOST器件在片测试结构中的各种寄生效应.模型考虑了PAD-互连金属、互连金属-DUT(device under test)之间的非连续性,对互连金属和基底之间的寄生效应单独进行了考虑.通过引入一个新的元件,对PAD结构基底感性损耗进行表征.模型最终应用到采用CSM(Chartered Semiconductor Manufacture Ltd)0.25 μm RF-CMOS工艺制造的测试结构寄生效应等效电路建模中,高达40GHz测试和仿真数据验证了模型的良好精度.     

Si离子注入对SIMOX SOI材料抗总剂量辐照性能的影响

为了提高SIMOX SOI材料抗总剂量辐照的能力,采用硅注入绝缘埋层后退火得到改性的SIMOX SOI材料.辐照前后,用pseudo-MOSFET方法测试样品的ID-VG特性曲线.结果表明,合适的硅离子注入工艺能有效提高材料抗总剂量辐照的能力.     

一种新型结构的静电感应晶体管

提出了一种新型结构的静电感应器件,设计了一道环绕的深槽,用以切断寄生效应.静电感应器件的寄生效应会导致器件性能的劣化甚至失效,文中提出了寄生效应的模型,并用PSPICE进行了仿真模拟,数值模拟结果和实验结果一致.实验表明这种深槽结构能够有效截断寄生路径,消除寄生电流的影响,优化器件性能.同时,文章详细描述了这种器件的设计和制造工艺.