用于频率合成器的低损耗声表面波滤波器

简述了产生声表面波滤波器插入损耗的主要机理和获得低损耗的原则；介绍了根据此原则对１００～５００ＭＨｚ５种滤波器的研制过程和结果。实验表明，采用镜像阻抗连接换能器结构可达到３～４ｄＢ的低损耗，并成功地应用于频率合成器中。     

预应力锚固技术在水口水电站工程中的应用

水口水电站在溢流坝闸墩，坝顶门机梁及启闭机梁等部位采用了预应力锚固技术。本文介绍了预应力锚固的设计及施工工艺，并通过对观测资料的分析，评价其设计的合理性。     

Effect of Additives on Magnetic Properties of High Frequency MnZn Power Ferrite

In keeping with the advance of more compact and more power-saving electronic equipment, the demand is increasing for smaller and more efficient switching power supply. Therefore, it is necessary to provide the adequate magnetic power ferrite materials to satisfy the demand. Such ferrite materials have to meet the following main requirement: 1) high initial permeability (μ i ); 2) high saturation magnetic induction (Bs); 3) high Curie temperature (Tc); 4) high electrical resistivity (ρ ); 5)…     

Viscoelastic Windows of Pressure-Sensitive Adhesives

A viscoelastic window (VW) concept has been proposed to identify different types of pressure-sensitive adhesives (PSA's). Such viscoelastic windows are constructed from the values of dynamic storage modulus: G' and dynamic loss modulus G' at frequencies of 10^-2 and 10² rad/sec. These frequencies are chosen because the range covers most of the time scales corresponding to the uses of PSA's at different application rates in performance tests. A four quadrant concept has also been recommended to categorize different types of PSA's based on the location of their VW's on the log-log cross plot of G' and G'. It was found that for most PSA's, the range of G' and G' at room temperature within these selected frequencies falls between 10³ and 10⁶ Pascals. The proposed four-quadrants (top-left hand quadrant of high G' and low G', top-right hand quadrant of high G' and high G', lower left hand quadrant of low G' and low G', and lower right-hand quadrant of low G' and high G') correspond respectively to (1) non-PSA or release coatings (2) high shear PSA's, (3) removable PSA's and medical PSA's and (4) quick and cold stick PSA's. It was also observed that the VW's of general purpose permanent PSA's occupy the central region which straddles part of the four quadrants.     

用屏蔽暂堵技术封堵水平井裂缝性漏层

克拉玛依油田HW702水平井的大斜度段和水平段,将穿越纵向裂缝发育的二叠系佳木河组储层。为安全钻进和保护油层,用超细碳酸钙和磺化沥青复配后加入复合离子钻井液中成屏蔽暂堵的堵漏钻井液。室内用岩心试验,屏蔽暂堵后渗透率可降为0,暂堵深度小于3cm,可用酸化和射孔解堵。现场使用效果也很好,使HW702水平井顺利完钻,并获得工业油气流。     

MODELING WATER LOSS DURING FRYING OF POTATO STRIPS: EFFECT OF SOLUTE IMPREGNATION

The effect of solute impregnation on water loss and oil uptake during potato strip frying was studied. Blanched potato strips were impregnated at 25°C by soaking in a solution of sucrose-NaCl-water, 20-5-75% by weight. After rinsing and air drying, strips were deep fried in sunflower oil at 160, 170 and 180°C. A control treatment, consisting of potato strips blanched but not soaked and later air dried was also conducted. Solute impregnation provided a decrease of the oil uptake. Two models, based on Fick's law were used to describe water loss during frying. The first one is the classic model with an effective moisture diffusion coefficient assumed a constant value. The second model considers that diffusion coefficient varies during the frying process. For a given frying temperature, constant diffusion coefficient for control potatoes resulted in lower values than the impregnated ones. The variable diffusivity model showed a two-stage behavior: during the first stage of frying, diffusion coefficient increased with frying temperatures, but from a given time on an inverse behavior began. This last fact was found to be related to an increase of the measured peak force needed to penetrate the potato crust.     

Ti 离子注入 LiNbO_3表面光学性能

本文研究了 x,y,z 三种切向的 LiNbO_3单晶片注入350keV 高能 Ti 离子(注入剂量为1.5×10~(17)/cm~2)后的表面光学性能。利用光谱仪及 AUEL 椭偏仪对三种切向 LiNbO_3试样在不同工艺处理后的光透射率及折射率进行了测试。注入损伤造成的光损耗可通过热处理消除,使晶格结构恢复至与完整晶格排列相近;注入层的折射率可增加11—13％左右。     

浅谈天馈线电压驻波比对微波电路的影响

天馈线电压驻波比是微波电路运行的重要指标，通过典型事例来阐述天馈线电压驻波比的劣化对微波电路的影响，并根据多年实践经验提出天馈线维护需注意的事项。     

基于蚁群算法的区域覆盖卫星星座优化设计

首先建立了以区域覆盖性能为目标的卫星星座参数优化模型,通过在连续域定义新的蚂蚁分类与转移策略改进了蚁群算法,使算法能够兼顾多目标优化时目标不兼容的情况,给出了基于该算法实现星座参数优化的框架。优化仿真实验验证了该算法的有效性,可为星座方案决策提供有力的支持。     

Low-resistance polysilicon process in contact application for high density devices

For the lowest resistance, it is required to have the epitaxial silicon contact between the silicon plug and the substrate and good step coverage at the high aspect-ratio contact holes, simultaneously. In this work, a double polysilicon (DPS) deposition technique was proposed for the requirements. The first, thin silicon layer is deposited in a single-wafer process chamber with an in-situ H₂-RTP (rapid thermal process) treatment for the epitaxial contact, and the second silicon layer is formed in a batch-type furnace for good step coverage. From chain resistance, Kelvin R_c, and current-voltage (I–V) measurement, the DPS process meets both low resistance and good uniformity, so that it suggests a breakthrough in the small-sized, semiconductor device application.