Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.     

复合聚全氟乙丙烯材料的介电及高频击穿性能研究

在聚全氟乙丙烯(FEP)中添加 TiO_2和 Al_2O_3,通过热压成型的方法制备了 FEP/TiO_2复合材料和 FEP/Al_2O_3复合材料,研究了氧化物添加量对复合材料介电常数、介电损耗和高频击穿性能的影响。结果表明,随氧化物含量的增加,复合材料的介电常数和介电损耗均增加;在同一添加量下,TiO_2对复合体系的介电性能影响较大。FEP/TiO_2复合材料的高频击穿性能随 TiO_2含量的增加而下降,在 TiO_2含量为4.0%(质量分数,下同)时,复合材料的损伤阈值已降为 FEP 材料损伤阈值的48.9 %。而 FEP/Al_2O_3复合材料的高频击穿性能随 Al_2O_3含量的增加而升高,当 Al_2O_3含量为1.2%时,复合材料的损伤阈值已增大到 FEP 材料损伤阈值的2倍,达到313 J/m~2。     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.     

Dielectric Resonators for the Measurement of Superconductor Thin Films Surface Impedance in Magnetic Fields at High Microwave Frequencies

We present the design and realization of cylindrical dielectric resonators operating in the 40–60 GHz frequency range, designed for the measurement of the surface resistance and of the surface reactance shift in High-T _c Superconductors (HTS) thin films in a dc magnetic field. The resonators are single tone, based on the TE ₀₁₁ mode, and multiple tone, the latter allowing in principle to exploit the simultaneous determination of the surface impedance at different frequencies. As an application example, we report the temperature and field dependencies of the effective surface impedance of some cuprate superconductors thin films. The results are compared with those obtained through the use of a standard metal cavity with a similar Q-factor and operating in the same frequency range. The comparison highlights a superior stability and a higher sensitivity, resulting in an increase of about two orders of magnitude in the resolution of the surface impedance measurement. By contrast, the dissipative part of the superconducting transition (above T/T _c = 0.97) is better studied with the metal cavity. We also present measurements in the vortex state in YBaCa₂Cu₃O_7−δ and Tl₂Ba₂CaCu₂O_8+x that show significantly different physics. PACS: 74.25 Nf.     

（Ba1-xSrx）（Zn1/3Nb2/3）O3微波介质陶瓷温度系数的异常

研究了（Ba1-xSrx）（Zn1/3Nb2/3）O3微波介质陶瓷温度系数的非线性变化以及异常的原因。根据CM公式，随着系统中Sr（Zn1/3Nb2/3）O3的增多，τc的异常是由于氧八面体的畸变导致的相转变（对称性降低）所造成的（晶体结构由无序立方相向有序赝立方相的连续变化）。相转变的发生相应影响了极化以及极化模式，这是造成τc异常的根本原因。     

Thermally stimulated discharge current (TSDC) and dielectric constant of semiconducting glasses

In this paper the results of thermally stimulated discharge current (TSDC) and dielectric constant for 40PbO-60Bi₂O₃ glass thermoelectrets are presented. Measurements of TSDC and dielectric constant, ǵe, have been carried out in the temperature range 30–300°C. The thermoelectrets were prepared at different polarizing fields. The various observed peaks in the thermograms are discussed on the basis of space charge polarization. The trap energy is evaluated from the Garlick-Gibson plot of initial rise method. Similarly other parameters such as relaxation time, charge release etc are evaluated.     

可与氟树脂基板相匹敌的热可塑性树脂基板材料

概述了可以与氟树脂基板相匹敌的低介质特性的热可塑性树脂基板材料的开发和应用。     

微波介质谐振器介电参数的测量

本文讨论了微波介质谐振器介电参数测试技术。用研制的测试装置对多个介质样品进行了实测，结果表明，本文的分析与实际值是吻合的。该测试技术可对微波介质谐振器的复介电常数进行迅速、准确、可靠、宽频带、无损伤、自动化和批量检测，具有较强的实用性。     

Gas diffusion and dielectric studies of polystyrene‐fullerene compositions

Polystyrene‐fullerene compositions containing up to 0.45 mol % (3 wt %) fullerene C₆₀ were investigated. It was established that the addition of fullerene to polystyrene (PS) leads to an increase of molecular packing density and so influences the transport of small molecules through the polymer films. Gas diffusion through films of PS‐fullerene compositions is slower than through PS films, and gas separating properties of compositions are higher. Dielectric studies showed that the fullerene is distributed as clusters in the polymer matrix of solid composition prepared from a toluene solution of PS and fullerene. Heating without air to the temperature higher than PS glass transition leads to increasing relaxation time of α‐transition in PS of compositions containing >0.15 mol % (1 wt %) fullerene. This effect is caused by rather strong interaction of PS chains via fullerene molecules entered into the PS‐fullerene complex. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 85: 2946–2951, 2002     

曲边介质波导的有限元分析

本文应用曲边有限元方法有效地计算了曲边质波导的色散特性，编制了相应的计算程序,应用本文方法计算得到的椭圆旬质波导和组合椭圆介质波导的主模和高次模的色散曲线与文献[2],[3]的结果相当吻合。