合同网协议协商机制收敛性与收敛速率分析

针对合同网协议协商机制缺乏问题求解质量与效率分析的情况,设定假设条件,构建马尔可夫链模型,得出了利用目前已有的合同类型无法保证全局收敛的结论.在此基础上,提出了变邻域合同系的概念,通过分析控制方式对收敛性的影响,得出了集中式控制可以保证全局收敛以及分布式控制以概率保证全局收敛的结论,并设计了概率的计算方法.采用Doebin理论,对应用变邻域合同系的收敛速率进行分析,得出了集中式控制收敛速率与分布式控制收敛速率的上下界估计.     

电子封装用环氧树脂的增韧和提高耐热性研究

用α,ω 二氯聚二甲基硅氧烷(DPS)或α 氯聚二甲基硅氧烷(CPS)来改性普通双酚A环氧树脂(BPAER)和四溴双酚A环氧树脂(TBBPAER),目标是制备出一系列可用于电子封装的高韧性高耐热性的环氧基料。通过对固化物的冲击强度、拉伸强度、断裂伸长率和玻璃化转变温度(Tg)以及断裂面形态的测定,探讨了改性方法、有机硅组成与含量等对材料性能的影响。结果表明,当m(BPAER)∶m(DPS)=100∶10时,树脂固化物的冲击强度达到30 5kJ/m2,拉伸强度达46 95MPa,断裂伸长率达到60 23%,Tg达到141 3℃;分别比未改性BPAER提高了19 7kJ/m2,1 69MPa,54 29%以及5 9℃。而当m(TBBPAER)∶m(CPS)=100∶10时,固化物的冲击强度达到17 2kJ/m2,拉伸强度达39 89MPa,断裂伸长率达到5 60%,Tg达到147 0℃;分别比未改性TBBPAER提高了12 8kJ/m2,28 26MPa,4 29%以及7 9℃。     

Effect of H2O adsorption on the electrical transport properties of double-walled carbon nanotubes

Water molecules adsorbed on a double-walled carbon nanotube (DWCNT) serve as charge trapping centers when present in low density and as electron donors when present in high density. There is a discontinuous change between the low- and high-density regions. H₂O molecules are apt to be adsorbed on the outer surface of DWCNTs, and in this case the electrical transport properties are extremely sensitive to environment, which suggests that DWCNTs are hole doped and act as an electric dipole with the inner tube.     

用于测定钢液低氧含量的双层固体电解质研究

采用“毛坯浆料法”在ＺｒＯ２（９％摩尔含量ＭｇＯ）管状固体电解质基体表面制备了厚度为１－４μｍ的ＺｒＯ２（１０％摩尔含量Ｙ２Ｏ３）固体电解质涂层，并分别对此在本实验室和美国ＬｅｅｄｓａｎｄＮｏｒｔｈｒｕｐ公司进行了钢液低氧含量测试，结果表明：涂层没有破坏基体的抗热震性：氧浓差电池电动势的重现性偏差由原来的±２ｍＶ；电动势的绝对值提高１０ｍＶ左右；而比日本Ｔｏｒａｙ公司的同类产品提高３５ｍＶ，这说明     

基于数字签名的危险化学品安全管理信息系统的设计与实现磁

文章研究欧盟等主要发达国家危险化学品安全管理的经验和发展趋势,结合我国危险化学品安全管理的现状和存在问题,研究开发一套适合我国国情的危险化学品安全管理信息系统。该系统采用了基于数字签名的身份认证、电子签名、电子签章技术。能有效防止身份冒用、责任否定、越权操作等重大安全问题;克服传统监管模式权责不清、流程混乱、效率低下、监管滞后等弊端;实现安监部门与企业上下及时沟通、实时在线业务办理、科学监管、监管过程电子数据保全。     

电子书包支持的体验学习活动设计与应用研究

旨在研究电子书包支持的体验学习的活动模型和应用效果。首先通过理论分析提出了电子书包支持的体验学习活动模型,并设计了《校园植物知多少》等3个教学专题,之后在某小学进行了试点实验研究。研究结果表明,电子书包支持的体验学习模型确实有助于提高学生的认知体验、行为体验和情感体验的参与度。     

数字式电子调速器的研究

简述了电子调速器的产生和发展、优点以及应用的领域,电子调速器的四个组成部分：控制器、执行器、执行器驱动机构和传感器,各个组成部分的作用,不同调速系统采用的不同的执行器和传感器;分述了不同的控制策略：PID控制、模糊控制、模糊PID控制和模糊自适应PID控制,以及对调速系统的调速性能和稳定性的提高;不同系统采用的不同的建模和仿真方法,提出了现阶段电子调速技术存在的几个问题：控制算法的选择、控制器的处理能力和执行器的精度;今后发展的方向：引入智能控制算法、多CPU结构体系的采用、控制器的抗干扰以及专用执行器和传感器的开发和扩展更广阔的应用领域.     

Mechanosynthesis of complex oxides and preparation of mixed conducting nanocomposites for catalytic membrane reactors

Nanopowders of LaGaO₃- and LaMnO₃-based complex perovskites (P) and ceria-based fluorites (F) were prepared by mechanosynthesis. Compatible nanocomposites F + P and P + P with mixed ion and electron conducting (MIEC) properties were prepared and sintered at moderate temperatures up to dense ceramics. The obtained materials were studied by means of XRD, SEM, TEM, electrical conductivity measurements, temperature programmed (TP) reduction/oxidation and preliminary estimations of permeability were obtained. A new strategy based on the advantages of the mechanochemical ceramic approach is proposed to design multilayer ceramic membranes for CMR. Casting technology and one-step sintering were used for the production of thin film membranes with MIEC properties on porous substrates. The coarse fraction of as-milled powders from agglomerates with density 70% was used for the porous substrate, and fine fractions of aggregates with sizes <1 μm were used in preparation of composites for thin dense films. Ceria-based composites prepared by the Pechini route and/or mechanochemical method are proposed as materials for protecting thin films.     

石化企业供应链管理研究

介绍了国内外石化行业的供应链管理现状，对中石化电子化供应链方案进行了分析，并就中石化供应链管理存在的问题提出解决方案。     

Simulation of carbon nanotube based p-n junction diodes

Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a ‘p-n junction’ is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current-voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p-n junction.