超高密度光存储技术

当光存储发展到HD—DVD时,其记录点尺寸已接近了传统光学记录的极限。突破这一存储极限,实现更高密度的存储成为目前新一代光存储技术的主要研究方向。关于这一研究,目前主要涉及三维体存储和近场光存储这两个方面。本文主要介绍了各种光存储技术的原理及其研究现状、分析了各自的优势和目前存在的主要问题。     

铜掺杂多孔硅的光致发光及其载流子的复合过程

采用浸泡镀敷的方法在多孔硅表面形成了一镀铜层,通过对掺铜前后多孔硅的光致发光(PL)谱和傅里叶变换红外(FTIR)吸收光谱的研究,讨论了铜在多孔硅表面的吸附对其光致发光的影响。实验表明,掺铜多孔硅的光致发光谱出现两个发光带,其中能量较低的发光带随主发光带变化,并使多孔硅的发光峰位蓝移。多孔硅发光峰位的蓝移,是由于在发生金属淀积的同时伴随着多孔硅表面Si的氧化过程(纳米Si氧化为SiO2)的缘故。     

侵蚀方式对硫酸根离子在混凝土中传输的影响

对连续浸泡和干湿循环 2 种侵蚀方式下硫酸根离子在混凝土中的传输过程进行了比较研究。选取混凝土强度等级为 C40 ,采用室温下自然干燥方式,硫酸钠侵蚀溶液的浓度为 800,6 000,50 000 mg/L 。当侵蚀龄期分别达到 30,90 ,180 ,360,580 d 时,采用钻芯、分层切片、研磨提取水泥石粉末样本进行化学分析,测定不同深度处混凝土的硫酸根离子含量。结果表明：总体上看干湿循环与连续浸泡相比更具有加速硫酸根离子向混凝土内传输的作用,使同深度处硫酸根离子含量增加;浓度较低的侵蚀溶液硫酸根离子具有更易于向混凝土深处传输的趋势,使较深处硫酸根离子含量增加;浓度较高的侵蚀溶液更偏于按着由表及里破坏的方式对混凝土产生侵蚀,使高含量的硫酸根离子聚集在浅层混凝土中。     

盐渍土浸水溶陷对路基施工的影响

选取察尔汗至格尔木高速公路路段沿线的盐渍土为研究对象,运用室内单轴压缩试验,利用单线单点法模拟现场浸水后施工特征,对该土在浸水情况下溶陷特性进行模拟试验研究。对比分析模拟试验结果与常规试验结果,发现模拟试验中土样的溶陷量较之常规试验更大,土体结构性破坏更加严重,说明在高含盐量的盐渍土地区,盐渍土浸水后会加剧路基的溶陷,为施工带来极其不利的影响。本文成果可为盐渍土地区的公路设计和施工提供有益参考。更多还原     

Linearization through state immersion of nonlinear systems admitting Lie symmetries

In this paper, it is shown that if a nonlinear system admits a Lie symmetry that can be transformed into its Poincaré-Dulac normal form by a state diffeomorphism, then, under some technical conditions, such a nonlinear system can be immersed into a linear one. This allows us to compute in closed-form the flow, all algebraic invariant curves (through semi-invariants) of the nonlinear system, and Lyapunov functions to study stability properties.     

库岸垫高区建筑场地沉降控制分析

库岸安置点受地质环境条件制约，使建筑场地设计中存在诸多不利因素。本文对库岸垫高安置点在地形地貌、地下水位变化、建筑结构和专业交叉方面的特点进行了分析，并分阶段对上述不利因素给出了应对措施和建议。     

粉末置换包覆的热力学及其影响因素

从热力学角度分析了置换包覆粉末的原理,并探讨了原料粉末、镀液浓度、温度、搅拌速度、添加剂等因素对置换包覆的影响.通过热力学计算表明,置换反应速度随镀液浓度的增大和温度的升高而增大.过程为化学反应控制时,搅拌不影响置换包覆速度;过程为扩散控制时,随着温度升高,置换包覆速度增加.镀液pH值过大会发生析氢反应,过小会使金属离子水解降低置换包覆速度.另外在镀液中加入合适的添加剂有利于改善镀层的质量.     

Interfacial reaction between 42Sn-58Bi solder and electroless Ni-P/immersion Au under bump metallurgy during aging

The interfacial reaction between 42Sn-58Bi solder (in wt.% unless specified otherwise) and electroless Ni-P/immersion Au was investigated before and after thermal aging, with a focus on the formation and growth of an intermetallic compound layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 μm (bare Ni), 0.1 μm, and 1 μm was plated on a 5-μm-thick layer of electroless Ni-P (with 14–15 at.% P). The 42Sn-58Bi solder balls were then fabricated on three different UBM structures by using screen printing and pre-reflow. A Ni₃Sn₄ layer formed at the joint interface after the pre-reflow for all three UBM structures. On aging at 125°C, a quaternary phase, identified as Sn₇₇Ni₁₅Bi₆Au₂, was observed above the Ni₃Sn₄ layer in the UBM structures that contain Au. The thick Sn₇₇Ni₁₅Bi₆Au₂ layer degraded the integrity of the solder joint, and the shear strength of the solder bump was about 40% less than the nonaged joints.     

Intermetallic formation in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with immersion Ag surface finish

The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu₆Sn₅ and continuous planar η-(cu_0.9Ni_0.1)₆Sn₅ intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu₃Sn intermetallic layer is formed at the interface between the η-Cu₆Sn₅ and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag₃Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.