存储器故障诊断算法的研究与实现

集成电路工艺的改进使存储器的测试面临着更大的挑战。文中从存储器的故障模型入手,着重描述了存储器常见的诊断算法。诊断算法和诊断策略要在诊断时间、故障覆盖率、面积开支之间进行权衡。因此要根据存储器的故障类型和测试需求来选择合适的诊断算法,才能达到比较满意的效果。     

短程脉冲无线信道特性仿真与分析

利用仿真语言对短程脉冲无线信道进行仿真研究。考虑短程脉冲无线传播环境为具有某一密度的随机分布的散射体,在一种理想情况下,信道传播环境表现为一个渗透网格。利用仿真语言仿真短程脉冲无线信道中多径分量的传播轨迹,通过脉冲无线信道的随机模型对短程脉冲无线信道特性进行仿真分析,仿真结果表明：利用该模型对短程脉冲无线信道仿真是有效的。     

可见光通信调光编码研究

在室内可见光通信系统中,通常需要系统根据用 户的需求在不同的场合提供调光能力并要求其 通信质量不受影响。采用一种调光编码方法使得室内可见光通信系统具有调光能力,同时将 该方法与 信道编码相结合保证了系统的可靠通信。首先分析了该方法的结构、编译码原理及调光能力 ,论证了 调光率间隔与码长有关,并且如果要扩大系统的调光范围可以采用级联编码方案。接着应用 MATLAB 对加入该编码方法的可见光通信系统进行仿真,仿真结果表明该方法可以实现调光并能有效 地进行纠错,验证了所提算法有效性与可行性。     

Lowering customer’s switching cost using B2B services for telecommunication companies

A B2B transaction is a transaction between organizations. However, the ripple effects of a B2B transaction can reach the members of the organization and generate additional economic impact. Enterprise LTE (Long term evolution) is a newly introduced B2B service in the South Korean telecommunications market. While it provides secure and fast telecommunications services to businesses, it can also affect the employees’ utility in the business, since the service provider can provide a variety of additional services to employees who use the same telecommunications provider for their mobile devices. In this study, we empirically analyze how B2B and Enterprise LTE services affect consumer churn-in in the telecommunications market. We estimate consumer benefit based on the additional services provided after the introduction of the B2B service using conjoint analysis. We also estimate consumer switching cost for changing one’s mobile telecommunications service provider using contingent valuation method. By comparing these values, we analyze the switching probability of employees when B2B services are introduced at their workplace. The results show that in order to maximize revenue, considering the revenue gained from new subscribers and from fees for providing additional services, lowering service fees for additional services and maximizing market share are advisable.     

瞬态C-V方法对Al_xGa_(1-x)As中DX中心的研究

本文指出DX中心电容测量中边区的重要性,提出一种新的瞬态C-V方法,可以用来测量DX中心浓度、导带电子浓度和边区的空间电荷分布及导带电子浓度随温度的变化关系,并由此导出测量DX中心热电离能的方法。另外,还对DX中心正∪和负∪两种模型的理论分析和实验结果进行了比较,得出不同模型所应满足的附加条件。     

基于双信道的一种ad hoc网络路由策略

利用多个信道接口来改善ad hoc网络信道容量。即一个信道周期性的广播节点状态信息分组来维护全网所有节点的状态信息，而另一个信道利用此信息采用最短路径搜寻算法来获得到目的节点的路由并完成数据传输。这样充分结合了表驱动路由方法和按需式路由方法的优点。另外，信息维护与数据分组分别在两个信道内同时进行，避免了信息维护对数据分组传输的影响，提高了网络性能。     

耦合双模SU（1，1）相干态J—C模型中的量子力学通道和量子互

利用量子信息熵理论研究耦合双模SU（1,1）相干态J－C模型的动力学特性,给了表示原子态变化的量子力学通道及表征量子通道传输原子初始信息能力的量子互熵。具体讨论了初始场的位相相干性和双模相干态参量对量子力学通道及量子互熵的影响。     

Characterization of SiC MESFETs with narrow channel layer

SiC MESFETs with a narrow channel layer are proposed to alleviate the short-channel effects, in particular the drain-induced barrier lowering (DIBL) effect that results in threshold voltage that is dependent on the gate length and the drain voltage applied. Such narrow channel layer 4H-SiC MESFETs were fabricated and characterized. The thickness and doping concentration of the channel layer are 0.08 μm and 8.0 × 10¹⁷ cm⁻³, respectively. The measurement results showed that the threshold voltage of the MESFETs is about −1.1 V and is independent of the gate length from 1 to 3 μm, and the drain voltage applied up to 40 V. Good saturation behavior with fairly low output conductance was also achieved, which is desirable for small signal applications. The results obtained for the narrow channel layer MESFETs are also compared with those measured for conventional devices with thicker channel layer of 0.20 μm and doping concentration of 2.5 × 10¹⁷ cm⁻³.     

Electrical properties of SiO2/TiO2 high-k gate dielectric stack

The trapping/detrapping behavior of charge carriers in ultrathin SiO₂/TiO₂ stacked gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Titanium tetrakis iso-propoxides (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO₂ films at low temperature (<200 °C) on strained-Si/relaxed-Si_0.8Ge_0.2 heterolayers by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. Stress-induced leakage current (SILC) through SiO₂/TiO₂ stacked gate dielectric is modeled by taking into account the inelastic trap-assisted tunneling (ITAT) mechanism via traps located below the conduction band of TiO₂ layer. The increase in the gate current density observed during CVS from room temperature up to 125 ^oC has been analyzed and modeled considering both the buildup of charges in the layer as well as the SILC contribution. Trap generation rate and trap cross-section are extracted. A capture cross-section in the range of 10⁻¹⁹ cm² as compared to 10⁻¹⁶ cm² in SiO₂ has been observed. A temperature-dependent trap generation rate and defects have also been investigated using time-dependent current density variation during CVS. The time dependence of defect density variation is calculated within the dispersive transport model, assuming that these defects are produced during random hopping transport of positively charge species in the insulating high-k stacked layers. SILC generation kinetics, i.e. defect generation probability under different injected fluences for various high-constant stress voltages in both polarities have been studied. An empirical relation between trap generation probability and applied stress voltage for various injected fluences has been developed.     

基于极坐标中蛇模型的类圆目标轮廓提取技术研究

提出了转化到极坐标中的蛇模型.通过把蛇模型转化到极坐标中,使轮廓的候选点得以更有序的排列.由于采用了动态规划法并在整个能量空间中搜索能量泛函的极值,算法对能量泛函的局部极值有较强的鲁棒性.所提出的模型不需要确定初始轮廓,可以用非迭代方法直接求解.与传统的动态规划法和贪婪算法进行了比较实验.结果表明,所提出的算法对极坐标中极点的位置不是很敏感.